发明授权
- 专利标题： Semiconductor device and method of manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US389563申请日： 1995-02-16
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公开(公告)号： US5552628A公开(公告)日： 1996-09-03
- 发明人: Tohru Watanabe , Katsuya Okumura
- 申请人： Tohru Watanabe , Katsuya Okumura
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX2-84947 19900402; JPX2-418924 19901217
- 主分类号： H01L21/316
- IPC分类号： H01L21/316 ; H01L21/768 ; H01L23/522 ; H01L23/532 ; H01L23/58 ; H01L23/48
摘要：
A semiconductor device of the present invention comprises a silicon substrate, a silicon oxide layer formed on the silicon substrate, first aluminum wires formed on the silicon oxide layer, a CVD SiO.sub.2 layer covering at least the first aluminum wires, and an inorganic oxide precipitated from a liquid-phase material, the inorganic oxide filling at least a gap between the first aluminum wires.
公开/授权文献
- USD323437S Control table for spectro photometer 公开/授权日：1992-01-28
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