发明授权
- 专利标题： Power-down reference circuit for ECL gate circuitry
- 专利标题（中）： ECL门电路的掉电参考电路
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申请号： US122273申请日： 1993-09-17
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公开(公告)号： US5552724A公开(公告)日： 1996-09-03
- 发明人: David B. Scott
- 申请人： David B. Scott
- 申请人地址： TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： TX Dallas
- 主分类号： H03K19/00
- IPC分类号： H03K19/00 ; H03K19/086
摘要：
Local reference voltage sub-circuits for ECL circuits are provided. The sub-circuits operate by a principal based on gating a current mirror. The sub-circuits described are superior to conventional approaches because less current is required during switching, better transfer characteristics are obtained and there exists, in some cases, less susceptibility to latch-up in comparison with conventional approaches.
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