发明授权
- 专利标题: Method and apparatus for ion beam formation in an ion implanter
- 专利标题(中): 用于离子注入机离子束形成的方法和装置
-
申请号: US545135申请日: 1995-10-19
-
公开(公告)号: US5554857A公开(公告)日: 1996-09-10
- 发明人: Victor M. Benveniste
- 申请人: Victor M. Benveniste
- 申请人地址: OH Cleveland
- 专利权人: Eaton Corporation
- 当前专利权人: Eaton Corporation
- 当前专利权人地址: OH Cleveland
- 主分类号: C23C14/48
- IPC分类号: C23C14/48 ; H01J37/05 ; H01J37/317 ; H01L21/265 ; H01J49/30
摘要:
A low energy ion implanter having an ion source for emitting ions and an implantation chamber spaced from the ion source by an ion beam path through which ions move from the source to the implantation chamber. A mass analyzing magnet positioned along the beam path between the source and the implantation chamber deflects ions through controlled arcuate paths to filter ions from the beam while allowing certain other ions to enter the ion implantation chamber. The magnet includes multiple magnet pole pieces constructed from a ferromagnetic material and having inwardly facing pole surfaces that bound at least a portion of a ion deflection region. One or more current carrying coils set up dipole magnetic fields in the deflection region near the pole pieces. Additional coils help set up a quadrapole field in deflection region. A controller electrically coupled to the one or more coils of said magnet for controls current through the one or more current carrying coils to create the magnetic field in the deflection region near the pole pieces.
公开/授权文献
信息查询
IPC分类: