-
1.发明授权Inductively coupled plasma flood gun using an immersed low inductance FR coil and multicusp magnetic arrangement 有权电感耦合等离子体喷枪采用浸入式低电感FR线圈和多脉冲磁排列公开(公告)号：US08471476B2
公开(公告)日：2013-06-25
申请号：US12901198
申请日：2010-10-08
IPC分类号： H05B31/26 , H01J37/317
CPC分类号： H01J37/3211 , H01J37/026 , H01J37/3171 , H01J37/32688 , H01J2237/03
摘要： A device is disclosed for providing an inductively coupled radio frequency plasma flood gun. In one particular exemplary embodiment, the device is a plasma flood gun in an ion implantation system. The plasma flood gun may comprise a plasma chamber having one or more apertures; a gas source capable of supplying at least one gaseous substance to the plasma chamber; a single-turn coil disposed within the plasma chamber, and a power source coupled to the coil for inductively coupling radio frequency electrical power to excite the at least one gaseous substance in the plasma chamber to generate a plasma. The inner surface of the plasma chamber may be free of metal-containing material and the plasma may not be exposed to any metal-containing component within the plasma chamber. The plasma chamber may include a plurality of magnets for controlling the plasma. An exit aperture may be provided in the plasma chamber to enable negatively charged particles of the resulting plasma to engage an ion beam that is part of the associated ion implantation system. In one embodiment, magnets are disposed on opposite sides of the aperture and are used to manipulate the electrons of the plasma.
摘要翻译： 公开了一种用于提供电感耦合的射频等离子体喷枪的装置。 在一个特定的示例性实施例中，该装置是离子注入系统中的等离子体喷枪。 等离子体喷枪可以包括具有一个或多个孔的等离子体室; 能够向所述等离子体室供给至少一种气态物质的气体源; 设置在等离子体室内的单匝线圈和耦合到线圈的电源，用于感应耦合射频电力以激发等离子体室中的至少一种气态物质以产生等离子体。 等离子体室的内表面可以不含含金属的材料，并且等离子体可能不暴露于等离子体室内的任何含金属的组分。 等离子体室可以包括用于控制等离子体的多个磁体。 可以在等离子体室中设置出口孔，以使所得到的等离子体的带负电粒子能够接合作为相关离子注入系统的一部分的离子束。 在一个实施例中，磁体设置在孔的相对侧上，并用于操纵等离子体的电子。
-
2.发明申请INDUCTIVELY COUPLED PLASMA FLOOD GUN USING AN IMMERSED LOW INDUCTANCE FR COIL AND MULTICUSP MAGNETIC ARRANGEMENT 有权电感耦合等离子体喷枪使用低电感FR线圈和MULTICUSP磁性布置公开(公告)号：US20120085917A1
公开(公告)日：2012-04-12
申请号：US12901198
申请日：2010-10-08
CPC分类号： H01J37/3211 , H01J37/026 , H01J37/3171 , H01J37/32688 , H01J2237/03
摘要： A device is disclosed for providing an inductively coupled radio frequency plasma flood gun. In one particular exemplary embodiment, the device is a plasma flood gun in an ion implantation system. The plasma flood gun may comprise a plasma chamber having one or more apertures; a gas source capable of supplying at least one gaseous substance to the plasma chamber; a single-turn coil disposed within the plasma chamber, and a power source coupled to the coil for inductively coupling radio frequency electrical power to excite the at least one gaseous substance in the plasma chamber to generate a plasma. The inner surface of the plasma chamber may be free of metal-containing material and the plasma may not be exposed to any metal-containing component within the plasma chamber. The plasma chamber may include a plurality of magnets for controlling the plasma. An exit aperture may be provided in the plasma chamber to enable negatively charged particles of the resulting plasma to engage an ion beam that is part of the associated ion implantation system. In one embodiment, magnets are disposed on opposite sides of the aperture and are used to manipulate the electrons of the plasma.
摘要翻译： 公开了一种用于提供电感耦合的射频等离子体喷枪的装置。 在一个特定的示例性实施例中，该装置是离子注入系统中的等离子体喷枪。 等离子体喷枪可以包括具有一个或多个孔的等离子体室; 能够向所述等离子体室供给至少一种气态物质的气体源; 设置在等离子体室内的单匝线圈和耦合到线圈的电源，用于感应耦合射频电力以激发等离子体室中的至少一种气态物质以产生等离子体。 等离子体室的内表面可以不含含金属的材料，并且等离子体可能不暴露于等离子体室内的任何含金属的组分。 等离子体室可以包括用于控制等离子体的多个磁体。 可以在等离子体室中设置出口孔，以使所得到的等离子体的带负电粒子能够接合作为相关离子注入系统的一部分的离子束。 在一个实施例中，磁体设置在孔的相对侧上，并用于操纵等离子体的电子。
-
3.发明授权Techniques for independently controlling deflection, deceleration and focus of an ion beam 有权用于独立控制离子束的偏转，减速和聚焦的技术公开(公告)号：US07888653B2
公开(公告)日：2011-02-15
申请号：US12348091
申请日：2009-01-02
IPC分类号： H01J3/14 , H01J49/22 , H01J23/083
CPC分类号： H01J37/1471 , H01J37/12 , H01J37/3171
摘要： Techniques for independently controlling deflection, deceleration, and focus of an ion beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for independently controlling deflection, deceleration, and focus of an ion beam. The apparatus may comprise an electrode configuration comprising a set of upper electrodes disposed above an ion beam and a set of lower electrodes disposed below the ion beam. The set of upper electrodes and the set of lower electrodes may be positioned symmetrically about a central ray trajectory of the ion beam. A difference in potentials between the set of upper electrodes and the set of lower electrodes may also be varied along the central ray trajectory to reflect an energy of the ion beam at each point along the central ray trajectory for independently controlling deflection, deceleration, and focus of an ion beam.
摘要翻译： 公开了用于独立地控制离子束的偏转，减速和聚焦的技术。 在一个特定的示例性实施例中，这些技术可以被实现为用于独立地控制离子束的偏转，减速和聚焦的装置。 该装置可以包括电极配置，其包括设置在离子束上方的一组上电极和设置在离子束下方的一组下电极。 所述上电极组和下电极组可以围绕离子束的中心射线轨迹对称地定位。 上部电极组和下部电极组之间的电位差也可以沿着中心射线轨迹变化，以反映沿着中心射线轨迹的每个点处的离子束的能量，以独立地控制偏转，减速和聚焦 的离子束。
-
4.发明授权公开(公告)号：US07421973B2
公开(公告)日：2008-09-09
申请号：US10762114
申请日：2004-01-21
CPC分类号： H01J37/321 , H01J37/08 , H01J37/3171 , H01J2237/0815 , H01J2237/083 , H01J2237/31708
摘要： An ion shower comprises a plasma source operable to generate source gas ions within a chamber, and an extraction assembly associated with a top portion of the chamber. The extraction assembly is operable to extract ions from the top portion of the chamber. The ion shower further comprises a workpiece support structure associated with the top portion of the chamber that is operable to secure the workpiece having an implantation surface orientated facing downward toward the extraction assembly for implantation thereof. The ion shower of the present invention advantageously facilitates SIMOX processing with a high oxygen fraction, and uniform beam current for next generation processing.
摘要翻译： 离子淋浴器包括可操作以在室内产生源气体离子的等离子体源，以及与腔室的顶部相关联的提取组件。 提取组件可操作以从腔室的顶部提取离子。 离子淋浴器还包括与室的顶部相关联的工件支撑结构，该工件支撑结构可操作以将具有朝向朝向提取组件定向的注入表面的工件固定以用于其植入。 本发明的离子淋浴器有利地促进了具有高氧分数的SIMOX处理和用于下一代处理的均匀束流。
-
5.发明申请Ion beam scanning control methods and systems for ion implantation uniformity 有权离子束扫描控制方法和离子注入系统的均匀性公开(公告)号：US20080067444A1
公开(公告)日：2008-03-20
申请号：US11784709
申请日：2007-04-09
IPC分类号： H01J37/08
CPC分类号： H01J37/3171 , G21K5/04 , H01J37/304 , H01J2237/24507 , H01J2237/3045 , H01J2237/30455 , H01J2237/31703
摘要： One embodiment of the invention relates to a method for adjusting the ribbon beam flux of a scanned ion beam. In this method, an ion beam is scanned at a scan rate, and a plurality of dynamic beam profiles are measured as the ion beam is scanned. A corrected scan rate is calculated based on the plurality of measured dynamic beam profiles of the scanned beam. The ion beam is scanned at the corrected scan rate to produce a corrected ribbon ion beam. Other methods and systems are also disclosed.
摘要翻译： 本发明的一个实施例涉及一种用于调整扫描离子束的带状光束通量的方法。 在该方法中，以扫描速率扫描离子束，并且当扫描离子束时测量多个动态光束分布。 基于扫描光束的多个测量的动态光束分布来计算校正的扫描速率。 以校正的扫描速率扫描离子束以产生校正的带状离子束。 还公开了其它方法和系统。
-
公开(公告)号：US06881966B2
公开(公告)日：2005-04-19
申请号：US10461702
申请日：2003-06-13
IPC分类号： H01J27/18 , H01J37/00 , H01J37/05 , H01J37/147 , H01J37/30 , H01J37/317
CPC分类号： H01J37/3171 , H01J37/05 , H01J37/147 , H01J2237/057
摘要： A magnetic deflector for an ion beam is disclosed and comprises first and second coils. The coils are positioned above and below the beam, respectively, and extend along a width of the beam. Current passes through the coils to generate a magnetic field therebetween that is generally perpendicular to a direction of travel of the beam along substantially the entire width thereof. In another aspect of the invention, a method of deflecting a beam prior to implantation into a workpiece is disclosed. The method includes determining one or more properties associated with the beam and selectively activating one of a magnetic deflection module and an electrostatic deflection module based on the determination.
摘要翻译： 公开了用于离子束的磁偏转器，并且包括第一和第二线圈。 线圈分别位于梁的上方和下方，并沿着梁的宽度延伸。 电流通过线圈以产生它们之间的磁场，其大致垂直于梁的大致整个宽度的行进方向。 在本发明的另一方面，公开了一种在植入植入工件之前偏转光束的方法。 该方法包括确定与光束相关联的一个或多个属性，并且基于该确定选择性地激活磁偏转模块和静电偏转模块中的一个。
-
公开(公告)号：US06534775B1
公开(公告)日：2003-03-18
申请号：US09654380
申请日：2000-09-01
IPC分类号： H01J3730
CPC分类号： H01J37/3171 , H01J3/40 , H01J37/026 , H01J37/3002 , H01J2237/004 , H01J2237/022 , H01J2237/31705
摘要： A system for inhibiting the transport of contaminant particles with an ion beam includes a pair of electrodes that provide opposite electric fields through which the ion beam travels. A particle entrained in the ion beam is charged to a polarity matching the polarity of ion beam when traveling through a first of the electric fields. The downstream electrode provides another electric field for repelling the positively charged particle away from the direction of beam travel.
摘要翻译： 用于抑制用离子束输送污染物颗粒的系统包括一对电极，其提供相反的电场，离子束通过该电场传播。 夹带在离子束中的颗粒在穿过第一电场时被充电到与离子束的极性相匹配的极性。 下游电极提供另一个电场，用于驱除带正电的粒子远离光束移动的方向。
-
公开(公告)号：US6135128A
公开(公告)日：2000-10-24
申请号：US49642
申请日：1998-03-27
IPC分类号： H01J27/02 , C23C14/48 , H01J27/04 , H01J37/08 , H01J37/317 , H01L21/265 , B08B3/12 , C23F1/02 , G01N21/01 , H01J27/00
CPC分类号： H01J37/3171 , H01J27/04 , H01J37/08 , H01J2237/022 , H01J2237/061
摘要： A method and system for in-process cleaning of an ion source (12) is provided. The ion source (12) comprises (i) a plasma chamber (22) formed by chamber walls (112, 114, 116) that bound an ionization zone (120); (ii) a source of ionizable dopant gas (66) and a first mechanism (68) for introducing said ionizable dopant gas into said plasma chamber; (iii) a source of cleaning gas (182) and a second mechanism (184) for introducing said cleaning gas into said plasma chamber; and (iv) an exciter (130) at least partially disposed within said chamber for imparting energy to said ionizable dopant gas and said cleaning gas to create a plasma within said plasma chamber. The plasma comprises disassociated and ionized constituents of said dopant gas and disassociated and ionized constituents of said cleaning gas. The disassociated and ionized constituents of said cleaning gas react with said disassociated and ionized constituents of said dopant gas to prevent formation of deposits of elements contained within said ionizable dopant gas on surfaces of said chamber walls. The cleaning gas may be, for example, nitrogen trifluoride (NF.sub.3), and the ionizable dopant gas may be, for example, either phosphine (PH.sub.3) or arsine (AsH.sub.3). Mass flow controllers control the ratio of cleaning gas to ionizable dopant gas introduced into said plasma chamber, which is greater than 0:1 and preferably at least 3:1.
摘要翻译： 提供了一种用于在过程中清洁离子源（12）的方法和系统。 离子源（12）包括（i）由结合电离区（120）的室壁（112,114,116）形成的等离子体室（22）; （ii）可电离掺杂剂气体源（66）和用于将所述可电离掺杂剂气体引入所述等离子体室的第一机构（68） （iii）用于将所述清洁气体引入所述等离子体室的清洁气体源（182）和第二机构（184）; 和（iv）至少部分地设置在所述腔室内的激励器（130），用于向所述可电离掺杂剂气体和所述清洁气体赋予能量以在所述等离子体腔室内产生等离子体。 所述等离子体包括所述掺杂气体的分离和离子化成分以及所述清洁气体的解离和离子化成分。 所述清洁气体的分离和离子化的组分与所述掺杂剂气体的所述分离和离子化的组分反应，以防止在所述室壁的表面上形成包含在所述可电离掺杂剂气体内的元素沉积物。 清洁气体可以是例如三氟化氮（NF 3），并且可电离掺杂剂气体可以是例如磷化氢（PH 3）或胂（AsH 3）。 质量流量控制器控制导入所述等离子体室的清洁气体与可离子化掺杂剂气体的比例大于0:1，优选至少3:1。
-
公开(公告)号：US5821677A
公开(公告)日：1998-10-13
申请号：US760714
申请日：1996-12-05
申请人： Victor M. Benveniste
发明人： Victor M. Benveniste
IPC分类号： C23C14/48 , H01J1/16 , H01J9/02 , H01J9/04 , H01J27/08 , H01J37/08 , H01J37/317 , H01L21/265 , H01J17/26 , H01J61/28
摘要： A filament plate for an ion beam source assembly of an ion implantation apparatus is disclosed. The filament plate is comprised of tungsten and includes two spaced apart spiral slits through a width of the plate. A gap width of the slits in not substantially greater than ten times a plasma Debye length of ions generated by electrons emitted into an arc chamber. The plate filament is disposed in an arc chamber into which ionizable source materials are injected. The plate includes two conductive posts press fit into openings of the plate for heating the plate to the thermionic emission temperature. The conductive posts extend through insulated openings in a side wall of the arc chamber.
摘要翻译： 公开了一种用于离子注入装置的离子束源组件的灯丝板。 灯丝板由钨组成，并且包括穿过板的宽度的两个间隔开的螺旋狭缝。 狭缝的间隙宽度基本上不大于发射到电弧室中的电子产生的离子的等离子体德拜长度的十倍。 板状灯丝设置在电弧室中，可注射的可电离源材料。 该板包括压配合到板的开口中的两个导电柱，用于将板加热到热离子发射温度。 导电柱延伸通过电弧室的侧壁中的绝缘开口。
-
公开(公告)号：US5736743A
公开(公告)日：1998-04-07
申请号：US696122
申请日：1996-08-13
申请人： Victor M. Benveniste
发明人： Victor M. Benveniste
IPC分类号： C23C14/48 , H01J37/05 , H01J37/317 , H01L21/265 , H01J49/30
CPC分类号： H01J37/3171 , H01J37/05 , H01J2237/14
摘要： A low energy ion implanter having an ion source for emitting ions and an implantation chamber spaced from the ion source by an ion beam path through which ions move from the source to the implantation chamber. A mass analyzing magnet positioned along the beam path between the source and the implantation chamber deflects ions through controlled arcuate paths to filter ions from the beam while allowing certain other ions to enter the ion implantation chamber. The magnet includes multiple magnet pole pieces constructed from a ferromagnetic material and having inwardly facing pole surfaces that bound at least a portion of a ion deflection region. One or more current carrying coils set up dipole magnetic fields in the deflection region near the pole pieces. Additional coils help set up a quadrapole field in deflection region. A controller electrically coupled to the one or more coils of said magnet for controls current through the one or more current carrying coils to create the magnetic field in the deflection region near the pole pieces.
-
-
-
-
-
-
-
-
-
搜索结果
80 条记录 (耗时 0.025 秒)
