发明授权
- 专利标题： Dielectric isolated type semiconductor device
- 专利标题（中）： 绝缘隔离型半导体器件
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申请号： US341977申请日： 1994-11-16
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公开(公告)号： US5557134A公开(公告)日： 1996-09-17
- 发明人: Takayuki Sugisaka , Toshio Sakakibara , Shoji Miura , Makio Iida
- 申请人： Takayuki Sugisaka , Toshio Sakakibara , Shoji Miura , Makio Iida
- 申请人地址： JPX Kariya
- 专利权人： Nippondenso Co., Ltd.
- 当前专利权人： Nippondenso Co., Ltd.
- 当前专利权人地址： JPX Kariya
- 优先权： JPX5-288309 19931117
- 主分类号： H01L21/322
- IPC分类号： H01L21/322 ; H01L21/331 ; H01L21/76 ; H01L21/762 ; H01L21/763 ; H01L29/73 ; H01L29/732 ; H01L29/866 ; H01L29/00
摘要：
A dielectric isolated type semiconductor device which can achieve a reduction in crystalline defects by means of a simple production process is provided. High-concentration regions are formed as active regions on a surface portion of an islandish semiconductor region which is isolated from an adjacent semiconductor region by means of an isolation trench. According to a first aspect of the present invention, an N type crystalline defect suppression region doped at a high concentration and deeper than the high-concentration regions is formed over the entire surface of an adjacent semiconductor region. According to a second aspect of the present invention, a high-concentration N type crystalline defect suppression region is provided on a surface portion of a P type high-concentration region is formed with identical structure and by an identical production process. By means of these N type regions, crystalline defects are reduced.
公开/授权文献
- US5008553A Electron beam lithography method and apparatus 公开/授权日：1991-04-16
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