A word line driving circuit which effectively prevents ground noise during word line discharge along with accommodating the narrowing of pitch in the word lines by making the layout area of the word line driver small. The word line driving circuit includes n-type MOS transistor 14 and p-type MOS transistor 12. The drain terminal of n-type MOS transistor 14 and drain terminal of p-type MOS transistor 12 in word line driver 10 are connected to the base terminal of word line WLi. The output terminal of an output transistor driving circuit 16 is connected to the source terminal of p-type MOS transistor 12, and the output terminal of a first output transistor controlling circuit 18 is connected to the gate terminal. The output terminal of a second output transistor controlling circuit 20 is connected to the gate terminal of n-type MOS transistor 14, and a ground terminal 22 as a reference potential terminal for leading in the electric current is connected to the source terminal.