发明授权
- 专利标题： Method of forming a semiconductor device by activating regions with a laser light
- 专利标题（中）： 用激光激活区域形成半导体器件的方法
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申请号： US190846申请日： 1994-02-03
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公开(公告)号： US5561081A公开(公告)日： 1996-10-01
- 发明人: Akira Takenouchi , Atsunori Suzuki , Hideto Ohnuma , Hongyong Zhang , Shunpei Yamazaki
- 申请人： Akira Takenouchi , Atsunori Suzuki , Hideto Ohnuma , Hongyong Zhang , Shunpei Yamazaki
- 申请人地址： JPX Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JPX Kanagawa-ken
- 优先权： JPX5-040572 19930204
- 主分类号： H01L21/265
- IPC分类号： H01L21/265 ; B23K26/073 ; H01L21/268 ; H01L21/336 ; H01L29/78 ; H01L29/786 ; H01L21/306
摘要：
An improved method of forming a semiconductor device on a glass substrate is described. The method comprises forming a semiconductor film on a glass substrate, heating the semiconductor film by means of a heater to a predetermined temperature, exposing the semiconductor film to pulsed laser light after the semiconductor film has been heated to the predetermined temperature by the heating step. The thermal shock due to sharp temperature change is lessened by the pre-heating step. The width of the pulsed laser light is greater than the height when a cross section is taken perpendicular to a length.
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