发明授权
- 专利标题： II/VI-compound semiconductor light emitting device
- 专利标题（中）： II / VI化合物半导体发光器件
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申请号： US429850申请日： 1995-04-27
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公开(公告)号： US5567960A公开(公告)日： 1996-10-22
- 发明人: Akira Ishibashi , Satoshi Ito , Hiroyuki Okuyama , Kazushi Nakano , Kenji Kondo , Reiko Takeishi
- 申请人： Akira Ishibashi , Satoshi Ito , Hiroyuki Okuyama , Kazushi Nakano , Kenji Kondo , Reiko Takeishi
- 申请人地址： JPX Tokyo
- 专利权人： Sony Corporation
- 当前专利权人： Sony Corporation
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX6-092552 19940428; JPX6-275285 19941109
- 主分类号： H01L33/14
- IPC分类号： H01L33/14 ; H01L33/20 ; H01L33/28 ; H01S5/00 ; H01S5/327 ; H01L33/00 ; H01S3/19
摘要：
A lifetime of a II/VI-compound semiconductor light emitting device can be extended. The II/VI-compound semiconductor light emitting device includes an active layer (4) and a p-side cladding layer (6). An active-layer side portion (26) of the p-side cladding layer (6) is formed as a lightly impurity-doped region or a non-doped region.
公开/授权文献
- US5023484A Architecture of high speed synchronous state machine 公开/授权日：1991-06-11
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