公开(公告)号：US20100114399A1

公开(公告)日：2010-05-06

申请号：US12518488

申请日：2007-12-11

Applicant: Kouji Higuchi ,  Kazushi Nakano ,  Tatsuyoshi Kajikawa ,  Eiji Takegami ,  Kazushi Watanabe ,  Satoshi Tomioka

Inventor： Kouji Higuchi ,  Kazushi Nakano ,  Tatsuyoshi Kajikawa ,  Eiji Takegami ,  Kazushi Watanabe ,  Satoshi Tomioka

IPC: G05B13/02 ,  G06F1/28 ,  G06F17/10

CPC classification number: H02M3/157

Abstract: There is provided a digital controller which can reduce a variation in output voltage as compared to the conventional digital controller at the time of abrupt changes in load and in input of a power amplifier. The digital controller is built in the power amplifier for supplying an output voltage vo to a load and is equipped with a manipulated variable calculating unit which detects the output voltage vo to calculate a manipulated variable ξ1 and a signal generating unit which converts the manipulated variable ξ1 into a signal for making the power amplifier operate. A feedforward function from an equivalent disturbance qy caused by the variation in the load is replaced by a feedback function from the output voltage vo and the manipulated variable ξ1, thereby allowing a transfer characteristic from the disturbance qy to the output voltage vo to result in a quadratic differential characteristic. Consequently, the variation in output voltage can be reduced as compared to the conventional controller at the time of the abrupt changes in the load and in the input of the power amplifier.

Abstract translation: 在负载突然变化和功率放大器的输入时，提供了一种数字控制器，其可以减少输出电压的变化，与传统的数字控制器相比。 数字控制器内置在功率放大器中，用于向负载提供输出电压vo，并且配备有操纵变量计算单元，该操作变量计算单元检测输出电压vo以计算操纵变量xgr1;以及信号产生单元，其将所操纵的 变量＆xgr 1转换成用于使功率放大器工作的信号。 由负载变化引起的等效干扰qy的前馈函数由来自输出电压vo和操作变量＆amp; xgr1的反馈函数代替，从而允许从干扰qy到输出电压vo的传递特性 具有二次微分特性。 因此，与传统控制器相比，在负载突然变化和功率放大器的输入时，输出电压的变化可以减小。

公开(公告)号：US20070250186A1

公开(公告)日：2007-10-25

申请号：US11572778

申请日：2005-07-28

Applicant: Kouji Higuchi ,  Kazushi Nakano ,  Tatsuyoshi Kajikawa ,  Eiji Takegami ,  Kazushi Watanabe ,  Satoshi Tomioka

Inventor： Kouji Higuchi ,  Kazushi Nakano ,  Tatsuyoshi Kajikawa ,  Eiji Takegami ,  Kazushi Watanabe ,  Satoshi Tomioka

IPC: G05B13/02

CPC classification number: G05B21/02 ,  G05B5/01 ,  H02M3/33515

Abstract: A robust digital controller is equipped with a high degree of approximation and is able to incorporate a novel two-degree-of-freedom robust digital control system without substantially considering the magnitude of the control inputs and there is provided its designing device. A control compensating means is configured as an integral type control system in which a discrete transfer function Wry(z) between a target value r and a controlled variable y is approximated to a higher-approximate quadratic approximate model transfer function Wm(z) and an arithmetic processing can be performed within the digital controller based on the model transfer function Wm(z). Further, the designing device automatically calculates parameters constituting the control system. Consequently, a robust digital controller can be easily realized that is equipped with a high degree of approximation as compared with a conventional approximate digital control system for realizing a first-order model and is robust against output noises.

Abstract translation: 强大的数字控制器具有高度的近似性，并且能够引入一种新颖的两度自由度鲁棒的数字控制系统，而基本上不考虑控制输入的大小，并提供其设计装置。 控制补偿装置被配置为整体式控制系统，其中目标值r和受控变量y之间的离散传递函数W（z）近似为较高近似二次近似模型 传递函数W m（z），并且可以在数字控制器内基于模型传递函数W（m）执行运算处理。 此外，设计装置自动计算构成控制系统的参数。 因此，与用于实现一阶模型的常规近似数字控制系统相比，可以容易地实现具有高度近似的鲁棒数字控制器，并且对输出噪声是鲁棒的。

公开(公告)号：US5766345A

公开(公告)日：1998-06-16

申请号：US543283

申请日：1995-10-16

Applicant: Shigetaka Tomiya ,  Kazushi Nakano ,  Satoshi Ito ,  Rikako Minatoya

Inventor： Shigetaka Tomiya ,  Kazushi Nakano ,  Satoshi Ito ,  Rikako Minatoya

IPC: C30B25/14 ,  C30B23/02 ,  H01L21/203 ,  H01L21/363 ,  H01L21/365 ,  H01S5/00 ,  H01S5/042 ,  H01S5/22 ,  H01S5/223 ,  H01S5/327

CPC classification number: H01L33/28 ,  C30B23/02 ,  C30B29/48 ,  H01L21/02395 ,  H01L21/02439 ,  H01L21/02505 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02631 ,  H01L33/0087 ,  H01S5/327 ,  H01S2304/04 ,  H01S5/0421 ,  H01S5/2213 ,  H01S5/2231

Abstract: An epitaxial growth method of semiconductor can reliably avoid irregularities from being produced when a II-VI compound semiconductor is grown epitaxially. When this method is applied to a method of manufacturing a semiconductor light-emitting device, it is possible to obtain a semiconductor light-emitting device having a long life and excellent light-emitting characteristic. When a II-VI compound semiconductor is grown epitaxially, a VI/II ratio, i.e., a supplying ratio of VI-group element and II-group element used in the epitaxial growth is selected in a range of from 1.3 to 2.5.

Abstract translation: 当外延生长II-VI化合物半导体时，半导体的外延生长方法可以可靠地避免产生不规则性。 当将该方法应用于制造半导体发光器件的方法时，可以获得具有长寿命和优异的发光特性的半导体发光器件。 当外延生长II-VI化合物半导体时，在外延生长中使用的VI / II比例，即VI族元素和II族元素的供给比选择为1.3〜2.5。

公开(公告)号：US5740193A

公开(公告)日：1998-04-14

申请号：US832065

申请日：1997-04-02

Applicant: Hiroyuki Okuyama ,  Akira Ishibashi ,  Eisaku Kato ,  Hiroshi Yoshida ,  Kazushi Nakano ,  Masakazu Ukita ,  Satoru Kijima ,  Sakurako Okamoto

Inventor： Hiroyuki Okuyama ,  Akira Ishibashi ,  Eisaku Kato ,  Hiroshi Yoshida ,  Kazushi Nakano ,  Masakazu Ukita ,  Satoru Kijima ,  Sakurako Okamoto

IPC: H01L33/14 ,  H01L33/28 ,  H01S5/00 ,  H01S5/028 ,  H01S5/30 ,  H01S5/327 ,  H01S3/19

CPC classification number: H01L33/285 ,  H01S5/327 ,  H01S5/028 ,  H01S5/305 ,  H01S5/3086

Abstract: A II-VI group compound semiconductor light-emitting device can emit light of a short wavelength at room temperature. Operation characteristics, such as current--voltage characteristics and current--light output characteristics can be stabilized and a life of this semiconductor light-emitting device can be extended. The semiconductor light-emitting device comprises a substrate (1), at least a first cladding layer (2) of a first conductivity type, an active layer (3) and a second cladding layer (4) of a second conductivity type, wherein at least the active layer (3) is made of a II-VI group compound semiconductor and the active layer (3) is doped by either or both of n-type and p-type dopants.

Abstract translation: II-VI族化合物半导体发光元件能够在室温下发出短波长的光。 可以稳定电流 - 电压特性和电流 - 光输出特性等工作特性，延长半导体发光元件的寿命。 半导体发光器件包括基板（1），至少第一导电类型的第一覆层（2），第二导电类型的有源层（3）和第二覆层（4），其中在 至少有源层（3）由II-VI族化合物半导体制成，并且有源层（3）由n型和p型掺杂剂中的一种或两者掺杂。

公开(公告)号：US08285400B2

公开(公告)日：2012-10-09

申请号：US12518488

申请日：2007-12-11

Applicant: Kouji Higuchi ,  Kazushi Nakano ,  Tatsuyoshi Kajikawa ,  Eiji Takegami ,  Kazushi Watanabe ,  Satoshi Tomioka

Inventor： Kouji Higuchi ,  Kazushi Nakano ,  Tatsuyoshi Kajikawa ,  Eiji Takegami ,  Kazushi Watanabe ,  Satoshi Tomioka

IPC: G05B13/02 ,  G05B11/01 ,  G05B19/29

CPC classification number: H02M3/157

Abstract: There is provided a digital controller which can reduce a variation in output voltage as compared to the conventional digital controller at the time of abrupt changes in load and in input of a power amplifier. The digital controller is built in the power amplifier for supplying an output voltage vo to a load and is equipped with a manipulated variable calculating unit which detects the output voltage vo to calculate a manipulated variable ξ1 and a signal generating unit which converts the manipulated variable ξ1 into a signal for making the power amplifier operate. A feedforward function from an equivalent disturbance qy caused by the variation in the load is replaced by a feedback function from the output voltage vo and the manipulated variable ξ1, thereby allowing a transfer characteristic from the disturbance qy to the output voltage vo to result in a quadratic differential characteristic. Consequently, the variation in output voltage can be reduced as compared to the conventional controller at the time of the abrupt changes in the load and in the input of the power amplifier.

Abstract translation: 在负载突然变化和功率放大器的输入时，提供了一种数字控制器，其可以减少输出电压的变化，与传统的数字控制器相比。 数字控制器内置在功率放大器中，用于向负载提供输出电压vo，并且配备有操纵变量计算单元，该操作变量计算单元检测输出电压vo以计算操纵变量xgr1;以及信号生成单元，其将被操纵的 变量＆xgr 1转换成用于使功率放大器工作的信号。 由负载变化引起的等效干扰qy的前馈函数由来自输出电压vo和操作变量＆amp; xgr1的反馈函数代替，从而允许从干扰qy到输出电压vo的传递特性 具有二次微分特性。 因此，与传统控制器相比，在负载突然变化和功率放大器输入时，输出电压的变化可以减小。

公开(公告)号：US07538014B2

公开(公告)日：2009-05-26

申请号：US11553054

申请日：2006-10-26

Applicant: Dharam Pal Gosain ,  Akio Machida ,  Kazushi Nakano ,  Toshio Fujino ,  Junichi Sato

Inventor： Dharam Pal Gosain ,  Akio Machida ,  Kazushi Nakano ,  Toshio Fujino ,  Junichi Sato

IPC: H01L21/00

CPC classification number: C30B29/06 ,  C30B13/00 ,  C30B13/24 ,  C30B13/34 ,  C30B29/08 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02609 ,  H01L21/02686 ,  H01L27/1285 ,  H01L29/04

Abstract: Disclosed are a method of producing a crystalline semiconductor material capable of improving the crystallinity and a method of fabricating a semiconductor device using the crystalline semiconductor material. An amorphous film is uniformly irradiated with a pulse laser beam (energy beam) emitted from an XeCl excimer laser by 150 times so as to heat the amorphous film at such a temperature as to partially melt crystal grains having the {100} orientations with respect to the vertical direction of a substrate and melt amorphous film or crystal grains having face orientations other than the {100} orientations. Silicon crystals having the {100} orientations newly occur between a silicon oxide film and liquid-phase silicon and are bonded to each other at random, to newly form crystal grains having the {100} orientations. Such a crystal grain creation step is repeated, to form a crystalline film which has crystal grains preferentially grown in the {100} orientations with respect to the vertical direction of the substrate and thereby has sharp square-shaped crystal grain boundaries.

Abstract translation: 公开了一种制造能够提高结晶度的结晶半导体材料的方法和使用该晶体半导体材料制造半导体器件的方法。 使用从XeCl准分子激光器发射的脉冲激光束（能量束）将非晶膜均匀地照射150次，以便在这样的温度下加热非晶膜，以便部分地熔化具有{100}取向的晶粒相对于 衬底的垂直方向和具有除{100}取向以外的面取向的熔融非晶膜或晶粒。 在氧化硅膜和液相硅之间新发生具有{100}取向的硅晶体并且彼此无规地结合，以重新形成具有{100}取向的晶粒。 重复这样的晶粒生成工序，形成相对于衬底的垂直方向在{100}取向上优先生长的晶粒，从而具有尖锐的方形晶粒边界的结晶膜。

公开(公告)号：US20070051302A1

公开(公告)日：2007-03-08

申请号：US11553054

申请日：2006-10-26

Applicant: Dharam Gosain ,  Akio Machida ,  Kazushi Nakano ,  Toshio Fujino ,  Junichi Sato

Inventor： Dharam Gosain ,  Akio Machida ,  Kazushi Nakano ,  Toshio Fujino ,  Junichi Sato

IPC: C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC classification number: C30B29/06 ,  C30B13/00 ,  C30B13/24 ,  C30B13/34 ,  C30B29/08 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02609 ,  H01L21/02686 ,  H01L27/1285 ,  H01L29/04

Abstract: Disclosed are a method of producing a crystalline semiconductor material capable of improving the crystallinity and a method of fabricating a semiconductor device using the crystalline semiconductor material. An amorphous film is uniformly irradiated with a pulse laser beam (energy beam) emitted from an XeCl excimer laser by 150 times so as to heat the amorphous film at such a temperature as to partially melt crystal grains having the {100} orientations with respect to the vertical direction of a substrate and melt amorphous film or crystal grains having face orientations other than the {100} orientations. Silicon crystals having the {100} orientations newly occur between a silicon oxide film and liquid-phase silicon and are bonded to each other at random, to newly form crystal grains having the {100} orientations. Such a crystal grain creation step is repeated, to form a crystalline film which has crystal grains preferentially grown in the {100} orientations with respect to the vertical direction of the substrate and thereby has sharp square-shaped crystal grain boundaries.

Abstract translation: 公开了一种制造能够提高结晶度的结晶半导体材料的方法和使用该晶体半导体材料制造半导体器件的方法。 使用从XeCl准分子激光器发射的脉冲激光束（能量束）将非晶膜均匀地照射150次，以便在这样的温度下加热非晶膜，以便部分地熔化具有{100}取向的晶粒相对于 衬底的垂直方向和具有除{100}取向以外的面取向的熔融非晶膜或晶粒。 在氧化硅膜和液相硅之间新发生具有{100}取向的硅晶体并且彼此无规地结合，以重新形成具有{100}取向的晶粒。 重复这样的晶粒生成工序，形成相对于衬底的垂直方向在{100}取向上优先生长的晶粒，从而具有尖锐的方形晶粒边界的结晶膜。

公开(公告)号：US06972246B2

公开(公告)日：2005-12-06

申请号：US10856138

申请日：2004-05-28

Applicant: Kazushi Nakano ,  Yukihisa Hitsuda ,  Toshio Fujino ,  Michinori Shiomi ,  Junichi Sato

Inventor： Kazushi Nakano ,  Yukihisa Hitsuda ,  Toshio Fujino ,  Michinori Shiomi ,  Junichi Sato

IPC: C30B13/00 ,  C30B29/06 ,  H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786 ,  H01S3/00

CPC classification number: H01L21/02686 ,  C30B13/00 ,  C30B29/06 ,  H01L21/02609 ,  H01L21/2026 ,  H01L27/1281 ,  H01L29/045 ,  H01L29/78675

Abstract: A manufacturing method for a crystalline semiconductor material including a plurality of semiconductor crystal grains is provided. The manufacturing method includes forming an amorphous or polycrystalline semiconductor layer on a substrate having a flat surface; forming a plurality of projections each having a side wall surface substantially perpendicular to the flat surface of the substrate, a height set in the range of about 1 nm to less than or equal to about ¼ of the thickness of the semiconductor layer, and a lateral dimension set in the range of about 3 μm to about 18 μm in a direction parallel to the flat surface of the substrate; and heating the semiconductor layer a number of times by using a pulsed laser thereby forming the crystalline semiconductor material including the crystal grains each having a specific plane orientation with respect to a direction perpendicular to the flat surface of the substrate so that the crystal grains respectively correspond to the projections. Accordingly, the position, size, and plane orientation of a crystal can be controlled by a simple step, and a crystalline semiconductor material excellent in planarity as a film can be formed.

Abstract translation: 提供了包括多个半导体晶粒的结晶半导体材料的制造方法。 该制造方法包括在具有平坦表面的基板上形成非晶或多晶半导体层; 形成多个突起，每个突起具有基本上垂直于基板的平坦表面的侧壁表面，设置在约1nm至小于或等于半导体层的厚度的约1/4的范围内的高度，以及横向 尺寸在平行于基板的平坦表面的方向上设定在约3μm至约18μm的范围内; 并通过使用脉冲激光加热半导体层多次，从而形成晶体半导体材料，该晶体半导体材料包括相对于垂直于衬底的平坦表面的方向具有特定平面取向的晶粒，使得晶粒分别对应于 对预测。 因此，可以通过简单的步骤来控制晶体的位置，尺寸和平面取向，并且可以形成作为膜的平面性优异的结晶半导体材料。

公开(公告)号：US20050172888A1

公开(公告)日：2005-08-11

申请号：US11098846

申请日：2005-04-05

Applicant: Dharam Gosain ,  Akio Machida ,  Kazushi Nakano ,  Toshio Fujino ,  Junichi Sato

Inventor： Dharam Gosain ,  Akio Machida ,  Kazushi Nakano ,  Toshio Fujino ,  Junichi Sato

IPC: G02F1/1368 ,  C23C14/14 ,  C23C14/34 ,  C23C14/58 ,  C23C16/24 ,  C23C16/26 ,  C23C16/28 ,  C23C16/56 ,  C30B13/00 ,  C30B13/24 ,  G09G3/36 ,  H01L21/20 ,  H01L21/336 ,  H01L29/786 ,  C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC classification number: C30B29/06 ,  C30B13/00 ,  C30B13/24 ,  C30B13/34 ,  C30B29/08 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02609 ,  H01L21/02686 ,  H01L27/1285 ,  H01L29/04

Abstract: Disclosed are a method of producing a crystalline semiconductor material capable of improving the crystallinity and a method of fabricating a semiconductor device using the crystalline semiconductor material. An amorphous film is uniformly irradiated with a pulse laser beam (energy beam) emitted from an XeCl excimer laser by 150 times so as to heat the amorphous film at such a temperature as to partially melt crystal grains having the {100} orientations with respect to the vertical direction of a substrate and melt amorphous film or crystal grains having face orientations other than the {100} orientations. Silicon crystals having the {100} orientations newly occur between a silicon oxide film and liquid-phase silicon and are bonded to each other at random, to newly form crystal grains having the {100} orientations. Such a crystal grain creation step is repeated, to form a crystalline film which has crystal grains preferentially grown in the {100} orientations with respect to the vertical direction of the substrate and thereby has sharp square-shaped crystal grain boundaries.

Abstract translation: 公开了一种制造能够提高结晶度的结晶半导体材料的方法和使用该晶体半导体材料制造半导体器件的方法。 使用从XeCl准分子激光器发射的脉冲激光束（能量束）将非晶膜均匀地照射150次，以便在这样的温度下加热非晶膜，以便部分地熔化具有{100}取向的晶粒相对于 衬底的垂直方向和具有除{100}取向以外的面取向的熔融非晶膜或晶粒。 在氧化硅膜和液相硅之间新发生具有{100}取向的硅晶体并且彼此无规地结合，以重新形成具有{100}取向的晶粒。 重复这样的晶粒生成工序，形成相对于衬底的垂直方向在{100}取向上优先生长的晶粒，从而具有尖锐的方形晶粒边界的结晶膜。

公开(公告)号：US5828086A

公开(公告)日：1998-10-27

申请号：US826108

申请日：1997-03-24

Applicant: Akira Ishibashi ,  Satoshi Matsumoto ,  Masaharu Nagai ,  Satoshi Ito ,  Shigetaka Tomiya ,  Kazushi Nakano ,  Etsuo Morita

Inventor： Akira Ishibashi ,  Satoshi Matsumoto ,  Masaharu Nagai ,  Satoshi Ito ,  Shigetaka Tomiya ,  Kazushi Nakano ,  Etsuo Morita

IPC: H01L33/06 ,  H01L33/28 ,  H01S5/30 ,  H01S5/32 ,  H01S5/347 ,  H01L33/00

CPC classification number: H01L33/28 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/347 ,  H01S2304/02 ,  H01S5/3059 ,  H01S5/3216

Abstract: A semiconductor light emitting device ccomprises a first cladding layer, an active layer and a second cladding layer which are stacked on a semiconductor substrate. At least a part of the first cladding layer and the second cladding layer has a superlattice structure comprising II-VI compound semiconductor. Another semiconductor light emitting device comprises a first cladding layer, a first guide layer, an active layer, a second guide layer and a second cladding layer which are stacked on a semiconductor substrate. At least a part of the first cladding layer, the first guide layer, the second cladding layer and the second guide layer has a superlattice structure. Still anothr semiconductor light emitting device comprises a defect decomposing layer, a defect blocking layer, a first cladding layer, an active layer, a second cladding layer which are stacked on a semiconductor substrate. The defect decomposing layer and the defect blocking layer comprise a superlattice structure.

Abstract translation: 半导体发光器件包括堆叠在半导体衬底上的第一覆层，有源层和第二覆层。 第一包层和第二包层的至少一部分具有包含II-VI化合物半导体的超晶格结构。 另一种半导体发光器件包括堆叠在半导体衬底上的第一覆层，第一引导层，有源层，第二引导层和第二覆层。 第一包覆层，第一引导层，第二覆盖层和第二引导层的至少一部分具有超晶格结构。 还有一种半导体发光器件包括堆叠在半导体衬底上的缺陷分解层，缺陷阻挡层，第一覆层，有源层，第二覆层。 缺陷分解层和缺陷阻挡层包括超晶格结构。