发明授权
- 专利标题： Semiconductor memory device
- 专利标题（中）： 半导体存储器件
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申请号： US263147申请日： 1994-06-21
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公开(公告)号： US5567962A公开(公告)日： 1996-10-22
- 发明人: Mamoru Miyawaki , Akira Ishizaki , Genzo Momma , Hiroshi Yuzurihara , Tetsunobu Kohchi
- 申请人： Mamoru Miyawaki , Akira Ishizaki , Genzo Momma , Hiroshi Yuzurihara , Tetsunobu Kohchi
- 申请人地址： JPX Tokyo
- 专利权人： Canon Kabushiki Kaisha
- 当前专利权人： Canon Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX3-92294 19910423; JPX3-92295 19910423; JPX3-97256 19910426
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/8234 ; H01L27/102 ; H01L27/108 ; H01L27/115 ; H01L29/423 ; H01L29/786 ; H01L29/78
摘要：
A semiconductor memory device includes: an insulated gate transistor having a plurality of main electrode regions provided along a major surface of a substrate and a channel region provided between the plurality of main electrode regions, and a gate electrode provided on the channel region with a gate insulator therebetween, the gate electrode having at least two opposing portions; and an electrically breakable memory element provided on one of the main electrode regions.
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