发明授权
- 专利标题： Focused ion beam apparatus and method
- 专利标题（中）： 聚焦离子束装置及方法
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申请号： US204468申请日： 1994-03-01
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公开(公告)号： US5574280A公开(公告)日： 1996-11-12
- 发明人: Toshiaki Fujii , Tatsuya Adachi
- 申请人： Toshiaki Fujii , Tatsuya Adachi
- 申请人地址： JPX Tokyo
- 专利权人： Seiko Instruments Inc.
- 当前专利权人： Seiko Instruments Inc.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX5-041560 19930302
- 主分类号： H01J37/28
- IPC分类号： H01J37/28 ; G01Q90/00 ; H01J37/305 ; H01J37/31 ; H01J37/317 ; H01L21/265 ; H01L21/306 ; H01J37/30
摘要：
A sample semiconductor device which is processed and/or observed with the focused liquid metal ion beam can be returned again to the manufacturing process in this invention. The metal ions used in this apparatus are generally Ga ions. Ga ions contaminate a semiconductor device and a semiconductor manufacturing apparatus by auto-doping. An area which is irradiated with a focused liquid metal ion is doped by the metal ions which are subsequently removed by irradiation with a gas ion beam or covered by hard fusing metal.
公开/授权文献
- US4892950A Process for the preparation of naphthalene-1,8-dicarboximides 公开/授权日：1990-01-09