发明授权
- 专利标题： Thin layer forming method wherein hydrophobic molecular layers preventing a BPSG layer from absorbing moisture
- 专利标题（中）： 疏水分子层防止BPSG层吸收水分的薄层形成方法
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申请号： US97231申请日： 1993-07-27
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公开(公告)号： US5576247A公开(公告)日： 1996-11-19
- 发明人: Kousaku Yano , Masayuki Endo , Yuka Terai , Noboru Nomura , Tomoyasu Murakami , Tetsuya Ueda , Satoshi Ueda
- 申请人： Kousaku Yano , Masayuki Endo , Yuka Terai , Noboru Nomura , Tomoyasu Murakami , Tetsuya Ueda , Satoshi Ueda
- 申请人地址： JPX Osaka
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： JPX Osaka
- 优先权： JPX4-204659 19920731
- 主分类号： H01L21/3105
- IPC分类号： H01L21/3105 ; H01L21/316
摘要：
A BPSG layer serving as a silicon oxide layer is formed on a semiconductor substrate 1. Formed on the surface of the BPSG layer is a hydrophobic molecular layer comprising hydrophobic groups such as methyl, ethyl and the like, by a silylation reaction (in which silyl having hydrophobic groups such as methyl groups, ethyl groups and the like, is reacted with OH groups, and in which the hydrophobic groups are substituted with H of the OH groups to generate --O--Si(CH.sub.3).sub.3 or the like). The molecular layer prevents the BPSG layer from absorbing moisture.
公开/授权文献
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