发明授权
- 专利标题： Method for determination of resistivity of N-type silicon epitaxial layer
- 专利标题（中）： 测定N型硅外延层电阻率的方法
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申请号： US275540申请日： 1994-07-15
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公开(公告)号： US5578504A公开(公告)日： 1996-11-26
- 发明人: Kiyoshi Mitani , Shigenori Saisu
- 申请人： Kiyoshi Mitani , Shigenori Saisu
- 申请人地址： JPX Tokyo
- 专利权人： Shin-Etsu Handotai Co., Ltd.
- 当前专利权人： Shin-Etsu Handotai Co., Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX5-199009 19930716
- 主分类号： G01N27/04
- IPC分类号： G01N27/04 ; G01R27/02 ; G01R27/14 ; H01L21/66
摘要：
A method for the determination of the resistivity of an n-type epitaxial layer formed on a silicon substrate is disclosed. This invention resides in either directly determining the true resistivity of a sample by preparing this sample without a natural oxide film which is responsible for the change with the passage of time or indirectly determining the true resistivity of a sample by intentionally forming on the sample a natural oxide film so stable to defy the change with the passage of time and measuring resistivity of this sample.
公开/授权文献
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