发明授权
- 专利标题： Infrared detection element array and method for fabricating the same
- 专利标题（中）： 红外线检测元件阵列及其制造方法
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申请号： US244079申请日： 1994-05-17
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公开(公告)号： US5583058A公开(公告)日： 1996-12-10
- 发明人: Yoshikazu Utsumi , Akira Yamada , Masatomi Okumura , Hisao Watarai , Ken Sato , Takehiko Sato , Yuichi Sakai
- 申请人： Yoshikazu Utsumi , Akira Yamada , Masatomi Okumura , Hisao Watarai , Ken Sato , Takehiko Sato , Yuichi Sakai
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX4-247722 19920917; JPX5-011438 19930127
- 主分类号： G01J5/10
- IPC分类号： G01J5/10 ; G01J5/20 ; H01L27/16 ; H01L37/02 ; H01L27/14 ; G01J5/02
摘要：
An object of the present invention is to provide a highly integrated infrared detecting element array having infrared detecting elements which are disposed at a high density and have a low heat capacity each. An insulator film 2 is provided on a silicon substrate 1 having upper surface in a {100} plane; opening portions are defined by etching right-angled triangular portions defined at four corners of each of right-angled quadrilaterals arranged in matrix array and enclosed by two orthogonally crossing pairs of parallel linear portions extending on the insulator film a pyramid cavity; 3 is defined into the silicon substrate underlying the insulator film 2 by anisotropically etching the silicon substrate; and infrared detecting elements are formed on the insulator film 2.
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