公开(公告)号：US5583058A

公开(公告)日：1996-12-10

申请号：US244079

申请日：1994-05-17

申请人： Yoshikazu Utsumi ,  Akira Yamada ,  Masatomi Okumura ,  Hisao Watarai ,  Ken Sato ,  Takehiko Sato ,  Yuichi Sakai

发明人： Yoshikazu Utsumi ,  Akira Yamada ,  Masatomi Okumura ,  Hisao Watarai ,  Ken Sato ,  Takehiko Sato ,  Yuichi Sakai

IPC分类号： G01J5/10 ,  G01J5/20 ,  H01L27/16 ,  H01L37/02 ,  H01L27/14 ,  G01J5/02

CPC分类号： G01J5/02 ,  G01J5/0225 ,  G01J5/023 ,  G01J5/024 ,  G01J5/10 ,  H01L27/16 ,  H01L37/02 ,  G01J2005/202

摘要： An object of the present invention is to provide a highly integrated infrared detecting element array having infrared detecting elements which are disposed at a high density and have a low heat capacity each. An insulator film 2 is provided on a silicon substrate 1 having upper surface in a {100} plane; opening portions are defined by etching right-angled triangular portions defined at four corners of each of right-angled quadrilaterals arranged in matrix array and enclosed by two orthogonally crossing pairs of parallel linear portions extending on the insulator film a pyramid cavity; 3 is defined into the silicon substrate underlying the insulator film 2 by anisotropically etching the silicon substrate; and infrared detecting elements are formed on the insulator film 2.

摘要翻译： PCT No.PCT / JP93 / 01328 Sec。 371日期：1994年5月17日 102（e）日期1994年5月17日PCT提交1993年9月16日PCT公布。 公开号WO94 / 07115 日本特开1994年3月31日本发明的目的是提供一种高度集成的红外线检测元件阵列，其具有红外线检测元件，其以高密度设置并且各自具有低热容量。 绝缘膜2设置在具有{100}平面中的上表面的硅衬底1上; 通过蚀刻在矩阵阵列中布置的每个直角四边形的四个角处限定的直角三角形部分限定开口部分，并且由在绝缘膜上延伸的金字塔空腔的两个平行直线部分的两个正交交叉的对包围; 3通过各向异性蚀刻硅衬底被限定在绝缘膜2下面的硅衬底中; 并且在绝缘膜2上形成红外线检测元件。

公开(公告)号：US5555154A

公开(公告)日：1996-09-10

申请号：US367745

申请日：1995-01-03

申请人： Fusaoki Uchikawa ,  Shigeru Matsuno ,  Shinichi Kinouchi ,  Hisao Watarai

发明人： Fusaoki Uchikawa ,  Shigeru Matsuno ,  Shinichi Kinouchi ,  Hisao Watarai

IPC分类号： C01G23/00 ,  C23C16/40 ,  C23C16/448 ,  C30B29/32 ,  H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/04 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01G4/10

CPC分类号： H01L28/40 ,  C23C16/409 ,  C23C16/448 ,  H01L21/31691 ,  H01L28/55

摘要： The multi-source raw material are dissolved in the tetra-hydrofuran, in a liquid state and evaporated simultaneously and stably transported to the reactor, thereby the dielectric thin film used for capacitor having a good performance is formed with a good repeatability. The present invention provides CVD raw material for oxide-system dielectric thin film wherein organic metal raw material is dissolved in the tetra-hydrofuran and the metal atom of the organic metal raw material is selected at least among Pb, Ti, Zr or alkaline earth metal. As a result, a stable dielectric thin film can be formed by CVD method and the dielectric thin film can be used for a capacitor for memory devices.

摘要翻译： 多源原料以液态溶解在四氢呋喃中，同时并且稳定地输送到反应器，由此形成具有良好重复性的用于具有良好性能的电容器的电介质薄膜。 本发明提供了氧化物系介电薄膜的CVD原料，其中有机金属原料溶解在四氢呋喃中，有机金属原料的金属原子至少选自Pb，Ti，Zr或碱土金属 。 结果，可以通过CVD法形成稳定的电介质薄膜，并且电介质薄膜可以用于存储器件的电容器。

公开(公告)号：US5523564A

公开(公告)日：1996-06-04

申请号：US248154

申请日：1994-05-24

申请人： Akira Yamada ,  Takehiko Sato ,  Yoshikazu Utsumi ,  Hisao Watarai

发明人： Akira Yamada ,  Takehiko Sato ,  Yoshikazu Utsumi ,  Hisao Watarai

IPC分类号： G01J1/02 ,  G01J5/02 ,  G01J5/34 ,  H01L37/02 ,  G01J5/20

CPC分类号： H01L37/02

摘要： A thermal-type infrared detecting element is provided which includes an infrared detecting member, a support member supporting the infrared detecting member, a substrate holding the support member, and a low thermal conduction part intervening between the substrate and a central portion of the support member, the support member having a link portion in at least a peripheral portion thereof which links the support member to the substrate and slits and/or grooves defined at a location adjacent the link portion. This infrared detecting element exhibits excellent sensitivity and responsiveness while requiring no cooling, and a one- or two-dimensional array of the element assures clear imaging with less crosstalk.

摘要翻译： 提供一种热型红外线检测元件，其包括红外线检测部件，支撑红外线检测部件的支撑部件，保持支撑部件的基板以及介于基板与支撑部件的中心部之间的低热传导部 所述支撑构件在至少其周边部分中具有将所述支撑构件连接到所述基板的连接部分和在所述连接部分附近的位置限定的狭缝和/或沟槽。 该红外线检测元件在不需要冷却的情况下表现出优异的灵敏度和响应性，并且该元件的一维或二维阵列确保具有更少串扰的清晰成像。

公开(公告)号：US4673910A

公开(公告)日：1987-06-16

申请号：US432953

申请日：1982-09-29

申请人： Fusaoki Uchikawa ,  Morihisa Takeuchi ,  Kozo Shimamoto ,  Kunihiko Miyao ,  Kimio Momiyama ,  Hisao Watarai

发明人： Fusaoki Uchikawa ,  Morihisa Takeuchi ,  Kozo Shimamoto ,  Kunihiko Miyao ,  Kimio Momiyama ,  Hisao Watarai

IPC分类号： G01N27/12 ,  H01C17/065 ,  H01C7/00

CPC分类号： G01N27/121 ,  H01C17/06586

摘要： A moisture sensitive element having on an insulating substrate a moisture sensitive section that changes its electrical resistance according to the humidity of atmosphere. The moisture sensitive section is prepared by mixing a polymerized organic silicon compound with particles of a moisture sensitive, electrically resistant material, applying a coat of the resulting blend onto the insulating substrate, and sintering the coat. The element is strong, has good moisture sensitivity characteristics and can be used for an extended period with little decrease in the moisture sensitivity and little change in the value of resistance.

公开(公告)号：US5372850A

公开(公告)日：1994-12-13

申请号：US18900

申请日：1993-02-17

申请人： Fusaoki Uchikawa ,  Shigeru Matsuno ,  Shin-ichi Kinouchi ,  Toshihisa Honda ,  Takeharu Kuroiwa ,  Hisao Watarai ,  Takashi Higaki

发明人： Fusaoki Uchikawa ,  Shigeru Matsuno ,  Shin-ichi Kinouchi ,  Toshihisa Honda ,  Takeharu Kuroiwa ,  Hisao Watarai ,  Takashi Higaki

IPC分类号： C23C16/40 ,  C23C16/448 ,  C23C16/00

CPC分类号： C23C16/409 ,  C23C16/4481

摘要： In a process for manufacturing an oxide-system dielectric thin film using a raw material compound in which a metal atom is coupled with an organic group through oxygen atoms by the CVD method. A vapor of organic solvent having a boiling point less than 100.degree. C. contacts to the raw material compound at least in one of processes for vaporizing or transporting said raw material compound. The raw material compound of oxide-system dielectric thin film can be vaporized stably and transported to the reactor at a low temperature than before. Therefore, a composition can be controlled homogeneously and an oxide-system dielectric thin film having a good performance can be manufactured.

摘要翻译： 在使用其中通过CVD法将金属原子与有机基团通过氧原子偶联的原料化合物制造氧化物系介质薄膜的方法中。 沸点低于100℃的有机溶剂的蒸气与原料化合物接触，至少一种蒸发或输送原料化合物的方法。 氧化物系介质薄膜的原料化合物能够在比以前低的温度下稳定地蒸发并输送到反应器。 因此，可以均匀地控制组合物，并且可以制造具有良好性能的氧化物系介电薄膜。

公开(公告)号：US4636806A

公开(公告)日：1987-01-13

申请号：US717754

申请日：1985-03-29

申请人： Hisao Watarai ,  Masahiro Tanaka ,  Shuji Masuda ,  Kenji Suzuki ,  Tsuyoshi Masumoto

发明人： Hisao Watarai ,  Masahiro Tanaka ,  Shuji Masuda ,  Kenji Suzuki ,  Tsuyoshi Masumoto

IPC分类号： B41M5/26 ,  G11B7/24 ,  G11B7/243

CPC分类号： G11B7/243 ,  G11B2007/24306 ,  G11B2007/24312 ,  G11B2007/2432 ,  G11B7/00454 ,  Y10S428/913 ,  Y10S430/146 ,  Y10S430/165

摘要： A recording medium is disclosed, which comprises as the main component an amorphous lead oxide or a lead oxide at the metastable state, having the formula of PbL.sub.x M.sub.y O.sub.z wherein L and M each indicate elements other than Pb and O. The recording mediums are drastically changed in their electrical properties and optical properties by application of heat, due to the characteristics inherent in the main component, and such changes make the recording medium highly useful for recording by laser light or heat.

摘要翻译： 公开了一种记录介质，其包括作为主要组分的亚稳态氧化物或氧化铅，具有PbL x M y O z的化学式，其中L和M各自表示不同于Pb和O的元素。记录介质在 由于主要成分固有的特性，它们的电性能和光学性能的提高，使得记录介质对于通过激光或热量的记录非常有用。

公开(公告)号：US06212059B1

公开(公告)日：2001-04-03

申请号：US09592862

申请日：2000-06-13

申请人： Fusaoki Uchikawa ,  Shigeru Matsuno ,  Shinichi Kinouchi ,  Hisao Watarai

发明人： Fusaoki Uchikawa ,  Shigeru Matsuno ,  Shinichi Kinouchi ,  Hisao Watarai

IPC分类号： H01G410

CPC分类号： C23C16/448 ,  C23C16/409 ,  H01G4/085 ,  H01G4/1227 ,  H01L21/31691 ,  H01L28/40 ,  H01L28/55

摘要： A capacitor for memory devices including a barium strontium titanate system dielectric film, the film being formed from a chemical vapor deposition source material including a liquid solution of respective organometallic compounds of barium, strontium, and titanium dissolved in tetrahydrofuran.

摘要翻译： 一种用于包括钡锶钛酸盐系介电膜的存储器件的电容器，该膜由化学气相沉积源材料形成，该化学气相沉积源材料包括溶解在四氢呋喃中的各种钡，锶和钛的有机金属化合物的液体溶液。

公开(公告)号：US6103002A

公开(公告)日：2000-08-15

申请号：US112569

申请日：1998-07-09

申请人： Fusaoki Uchikawa ,  Shigeru Matsuno ,  Shinichi Kinouchi ,  Hisao Watarai

发明人： Fusaoki Uchikawa ,  Shigeru Matsuno ,  Shinichi Kinouchi ,  Hisao Watarai

IPC分类号： C23C16/40 ,  C23C16/448 ,  H01L21/02 ,  H01L21/314 ,  H01L21/316

CPC分类号： C23C16/448 ,  C23C16/409 ,  H01G4/085 ,  H01G4/1227 ,  H01L21/31691 ,  H01L28/40 ,  H01L28/55

摘要： The multi-source raw material are dissolved in the tetra-hydrofuran, in a liquid state and evaporated simultaneously and stably transported to the reactor, thereby the dielectric thin film used for capacitor having a good performance is formed with a good repeatability. The present invention provides CVD raw material for oxide-system dielectric thin film wherein organic metal raw material is dissolved in the tetra-hydrofuran and the metal atom of the organic metal raw material is selected at least among Pb, Ti, Zr or alkaline earth metal. As a result, a stable dielectric thin film can be formed by CVD method and the dielectric thin film can be used for a capacitor for memory devices.

公开(公告)号：US5134101A

公开(公告)日：1992-07-28

申请号：US806602

申请日：1991-12-12

申请人： Akira Yamada ,  Toshihisa Honda ,  Yoshikazu Utsumi ,  Hisao Watarai

发明人： Akira Yamada ,  Toshihisa Honda ,  Yoshikazu Utsumi ,  Hisao Watarai

IPC分类号： C04B35/47 ,  C04B35/495

CPC分类号： C04B35/495 ,  C04B35/47

摘要： The improved dielectric porcelain for use at high frequencies is represented by the general formula:xSrO.multidot.yCaO.multidot.z[(1-m)TiO.sub.2 .multidot.m/2{TaO.sub.5/2 .multidot.(1-n)GaO.sub.3/2 .multidot.nGdO.sub.3/2 .music-sharp.][where 0.42.ltoreq.x.ltoreq.0.54 (or 0.06.ltoreq.x.ltoreq.0.18);0.06.ltoreq.y.ltoreq.0.18 (or 0.42.ltoreq.y.ltoreq.0.54);z=0.40;0.05.ltoreq.m.ltoreq.0.70;0.00.ltoreq.n.ltoreq.1.00;x+y=0.6]with Mn.sub.2 O.sub.3 being contained in an amount of up to 3 wt% of the total amount. The porcelain can be formulated from essentially similar basic compositions and yet it exhibits specific dielectric constants over a broad range on the order of 20-60 in the microwave frequency region and, at the same time, it has commerically acceptable high values of Q factor as well as stable and small temperature coefficients of dielectric constant.

摘要翻译： 在高频下使用的改进的电介质陶瓷由以下通式表示：xSrOxyCaOxz [（1-m）TiO2xm / 2 {TaO5 / 2x（1-n）GaO3 / 2xnGdO3 / 2＆musics＆] [其中0.42

公开(公告)号：US5128290A

公开(公告)日：1992-07-07

申请号：US721263

申请日：1991-06-26

申请人： Akira Yamada ,  Toshihisa Honda ,  Hisao Watarai ,  Kiyoshi Saitou ,  Yoshikazu Utsumi

发明人： Akira Yamada ,  Toshihisa Honda ,  Hisao Watarai ,  Kiyoshi Saitou ,  Yoshikazu Utsumi

IPC分类号： C04B35/46 ,  C04B35/468 ,  H01B3/12 ,  H01G4/12 ,  H01P7/10

CPC分类号： H01G4/1227 ,  C04B35/4682

摘要： The present invention provides microwave ceramic dielectric materials having large relative dielectric constant, very large Q, and stable and small temperature coefficient.The ceramic dielectric materials of the present invention are expressed by the general formula:[{BaO}.sub.x {TiO.sub.2 }.sub.y {(Sm.sub.2 O.sub.3).sub.1-m-n (SrO.cndot.CeO.sub.2).sub.m (CaO.cndot.CeO.sub.2).sub.n }.sub.z ].sub.1-A [SrTiO.sub.3 ].sub.Awherein, 0.1.ltoreq.x.ltoreq.0.25, 0.6.ltoreq.y.ltoreq.0.85, 0.05.ltoreq.z.ltoreq.0.3, 0.ltoreq.m.ltoreq.0.80, 0.ltoreq.n

摘要翻译： 本发明提供具有相对介电常数大，Q值非常大，温度系数稳定的微波陶瓷介电材料。 本发明的陶瓷电介质材料由以下通式表示：[{BaO} x {TiO 2} y {（Sm 2 O 3）1-mn（SrO.CeO 2）m（CaO.CeO 2）n} z] 1-A [ SrTiO 3] A，其中，0.1≤x≤0.25,0.6≤y≤0.85,0.05≤z≤0.3,0≤m≤0.80,0≤n <0.8，x + y + z = 1，m + n <0.8，x + y + z = 1,0