发明授权
- 专利标题： Compound semiconductor devices and methods of making compound semiconductor devices
- 专利标题（中）： 化合物半导体器件及其制造方法
-
申请号： US404287申请日： 1995-03-14
-
公开(公告)号： US5585649A公开(公告)日： 1996-12-17
- 发明人: Masayuki Ishikawa , Yukie Nishikawa , Masaaki Onomura , Shinji Saito , Peter J. Parbrook , Genichi Hatakoshi
- 申请人： Masayuki Ishikawa , Yukie Nishikawa , Masaaki Onomura , Shinji Saito , Peter J. Parbrook , Genichi Hatakoshi
- 申请人地址： JPX Kanagawa-ken
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kanagawa-ken
- 优先权： JPX6-044453 19940315
- 主分类号： H01L29/43
- IPC分类号： H01L29/43 ; H01L21/28 ; H01L33/06 ; H01L33/14 ; H01L33/28 ; H01L33/30 ; H01L33/40 ; H01S5/042 ; H01S5/22 ; H01S5/223 ; H01S5/327 ; H01L33/00
摘要：
A compound semiconductor device with an improved internal current blocking structure. The semiconductor device includes an n-clad layer of II-VI compound semiconductor, a p-clad layer of II-VI compound semiconductor, an active layer of II-VI compound semiconductor between the n-clad and p-clad layers, a very thin current blocking layer of n-type II-VI compound semiconductor on the p-clad layer and providing an opening, a p-contact layer of p-type II-VI compound semiconductor on the p-clad layer and the current blocking layer at the opening, and a p-side electrode on the p-contact layer.
公开/授权文献
- US4441226A Car washing apparatus 公开/授权日：1984-04-10
信息查询
IPC分类:
