发明授权
- 专利标题： Interconnection structure of semiconductor device
- 专利标题（中）： 半导体器件的互连结构
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申请号： US479735申请日： 1995-06-07
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公开(公告)号： US5600170A公开(公告)日： 1997-02-04
- 发明人: Masao Sugiyama , Hiroyuki Amishiro , Keiichi Higashitani
- 申请人： Masao Sugiyama , Hiroyuki Amishiro , Keiichi Higashitani
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX6-322292 19941226
- 主分类号： H01L23/522
- IPC分类号： H01L23/522 ; H01L21/768 ; H01L23/485 ; H01L29/417 ; H01L29/45 ; H01L29/49 ; H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113
摘要：
An interconnection structure of a semiconductor device with a gate electrode, an active region provided in the vicinity of the gate electrode and a first buried layer in a contact hole exposing the gate electrode and the active region. The contact hole is easily formed, and the first buried layer has a substantially low interconnection resistance value.
公开/授权文献
- USD332288S Puzzle game 公开/授权日：1993-01-05