发明授权
- 专利标题: Method of preparing bismuth oxide superconductor
- 专利标题(中): 制备氧化铋超导体的方法
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申请号: US385240申请日: 1995-02-08
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公开(公告)号: US5610123A公开(公告)日: 1997-03-11
- 发明人: Kenichi Sato , Takeshi Hikata , Munetsugu Ueyama
- 申请人: Kenichi Sato , Takeshi Hikata , Munetsugu Ueyama
- 申请人地址: JPX
- 专利权人: Sumitomo Electric Industries, Ltd.
- 当前专利权人: Sumitomo Electric Industries, Ltd.
- 当前专利权人地址: JPX
- 优先权: JPX2-77467 19900326; JPX2-104304 19900418; JPX3-011127 19910131
- 主分类号: C01G29/00
- IPC分类号: C01G29/00 ; C01G1/00 ; C04B35/00 ; C04B35/45 ; H01B12/04 ; H01B13/00 ; H01L39/24
摘要:
In a method of preparing a bismuth oxide superconducting wire comprising the steps of filling raw material powder into a metal sheath, working the same into a wire by performing deformation processing in this state, and heat treating the wire, the raw material powder is heat treated before the step of working the raw material powder into a wire by performing deformation processing, so that the ratio of a 2212 phase, containing Bi or (Bi,Pb), Sr, Ca and Cu in composition ratios of about 2:2:1:2, to a 2223 phase, containing Bi or (Bi,Pb), Sr, Ca and Cu in composition ratios of about 2:2:2:3, is 75 to 90:10 to 25, in order to prepare a wire which is excellent in critical current density as well as in critical current.
公开/授权文献
- US4415250A Focusing system for long focal length objectives 公开/授权日:1983-11-15