发明授权
- 专利标题： Avalanche photodiode with epitaxially regrown guard rings
- 专利标题（中）： 雪崩光电二极管外延重新生长保护环
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申请号： US389375申请日： 1995-02-16
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公开(公告)号： US5610416A公开(公告)日： 1997-03-11
- 发明人: Chung-Yi Su , Ghulam Hasnain , James N. Hollenhorst
- 申请人： Chung-Yi Su , Ghulam Hasnain , James N. Hollenhorst
- 申请人地址： CA Palo ALto
- 专利权人： Hewlett-Packard Company
- 当前专利权人： Hewlett-Packard Company
- 当前专利权人地址： CA Palo ALto
- 主分类号： H01L31/107
- IPC分类号： H01L31/107 ; H01L31/0328 ; H01L31/0336 ; H01L31/072 ; H01L31/109
摘要：
A SAM avalanche photodiode formed with an epitaxially regrown guard ring and a planar P-N junction defined between a cap layer and a multiplication layer. The multiplication layer is part of a multi-layer semiconductor platform having a conductivity opposite to the conductivity type of the cap layer, including a light absorption layer, a substrate and an intermediate layer. A second embodiment of the present invention is disclosed including a SAM avalanche photodiode having a guard ring with a variable distribution of impurity dopant concentrations. In addition, a third embodiment of the present invention is disclosed in which a narrow band gap layer completely covers the cap layer and a non-alloy metal contact is formed to completely cover the narrow band gap layer, forming a mirror junction. In this embodiment, incident light is shined through the substrate and reflected from the mirror junction, enhancing the absorption efficiency.
公开/授权文献
- US6162970A Soybean cultivar 61598277 公开/授权日：2000-12-19
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