公开(公告)号：US5610416A

公开(公告)日：1997-03-11

申请号：US389375

申请日：1995-02-16

申请人： Chung-Yi Su ,  Ghulam Hasnain ,  James N. Hollenhorst

发明人： Chung-Yi Su ,  Ghulam Hasnain ,  James N. Hollenhorst

IPC分类号： H01L31/107 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

CPC分类号： H01L31/1075

摘要： A SAM avalanche photodiode formed with an epitaxially regrown guard ring and a planar P-N junction defined between a cap layer and a multiplication layer. The multiplication layer is part of a multi-layer semiconductor platform having a conductivity opposite to the conductivity type of the cap layer, including a light absorption layer, a substrate and an intermediate layer. A second embodiment of the present invention is disclosed including a SAM avalanche photodiode having a guard ring with a variable distribution of impurity dopant concentrations. In addition, a third embodiment of the present invention is disclosed in which a narrow band gap layer completely covers the cap layer and a non-alloy metal contact is formed to completely cover the narrow band gap layer, forming a mirror junction. In this embodiment, incident light is shined through the substrate and reflected from the mirror junction, enhancing the absorption efficiency.

摘要翻译： SAM雪崩光电二极管形成有外延重新生长的保护环和在盖层和乘法层之间限定的平面P-N结。 倍增层是具有与覆盖层的导电类型相反的导电性的多层半导体平台的一部分，包括光吸收层，衬底和中间层。 公开了本发明的第二实施例，其包括具有杂质掺杂剂浓度可变分布的保护环的SAM雪崩光电二极管。 此外，公开了本发明的第三实施例，其中窄带隙层完全覆盖盖层，并且形成非合金金属接触以完全覆盖窄带隙层，形成镜结。 在本实施例中，入射光通过衬底照射并从镜结点反射，提高了吸收效率。

公开(公告)号：US5843804A

公开(公告)日：1998-12-01

申请号：US812465

申请日：1997-03-06

申请人： Chung-Yi Su ,  Ghulam Hasnain ,  James N. Hollenhorst

发明人： Chung-Yi Su ,  Ghulam Hasnain ,  James N. Hollenhorst

IPC分类号： H01L31/107 ,  H01L31/18

CPC分类号： H01L31/1075

摘要： A SAM avalanche photodiode formed with an epitaxially regrown guard ring and a planar P-N junction defined between a cap layer and a multiplication layer. The multiplication layer is part of a multi-layer semiconductor platform having a conductivity opposite to the conductivity type of the cap layer, including a light absorption layer, a substrate and an intermediate layer. A second embodiment of the present invention is disclosed including a SAM avalanche photodiode having a guard ring with a variable distribution of impurity dopant concentrations. In addition, a third embodiment of the present invention is disclosed in which a narrow band gap layer completely covers the cap layer and a non-alloy metal contact is formed to completely cover the narrow band gap layer, forming a mirror junction. In this embodiment, incident light is shined through the substrate and reflected from the mirror junction, enhancing the absorption efficiency.

摘要翻译： SAM雪崩光电二极管形成有外延重新生长的保护环和在盖层和乘法层之间限定的平面P-N结。 倍增层是具有与覆盖层的导电类型相反的导电性的多层半导体平台的一部分，包括光吸收层，衬底和中间层。 公开了本发明的第二实施例，其包括具有杂质掺杂剂浓度可变分布的保护环的SAM雪崩光电二极管。 此外，公开了本发明的第三实施例，其中窄带隙层完全覆盖盖层，并且形成非合金金属接触以完全覆盖窄带隙层，形成镜结。 在本实施例中，入射光通过衬底照射并从镜结点反射，提高了吸收效率。

公开(公告)号：US5866936A

公开(公告)日：1999-02-02

申请号：US831843

申请日：1997-04-01

申请人： Ghulam Hasnain ,  James N. Hollenhorst ,  Chung-Yi Su

发明人： Ghulam Hasnain ,  James N. Hollenhorst ,  Chung-Yi Su

IPC分类号： H01L21/22 ,  H01L31/00 ,  H01L31/107 ,  H01L29/861

CPC分类号： H01L31/1075

摘要： A mesa-structure avalanche photodiode in which a buffer region in the surface of the mesa structure effectively eliminates the sharply-angled, heavily doped part of the cap layer that existed adjacent the lightly-doped n-type multiplication layer and p-type guard ring before the buffer region was formed. This reduces electric field strength at the ends of the planar epitaxial P-N junction and prevents edge breakdown in this junction. The lateral extent of the guard ring is defined by a window formed in a masking layer prior to regrowth of the guard ring. This guard ring structure eliminates the need to perform additional processing steps to define the lateral extent of the guard ring and passivate the periphery of the guard ring.

摘要翻译： 台面结构雪崩光电二极管，其中台面结构表面中的缓冲区域有效地消除了存在于轻掺杂n型倍增层和p型保护环附近的覆盖层的锐角重掺杂部分 在缓冲区形成之前。 这降低了在平面外延P-N结的端部处的电场强度，并防止在该结中的边缘击穿。 保护环的横向范围由在保护环的再生长之前在掩模层中形成的窗口限定。 该保护环结构消除了进行附加处理步骤以限定保护环的横向范围并钝化保护环的周边的需要。

公开(公告)号：US08376630B2

公开(公告)日：2013-02-19

申请号：US13222094

申请日：2011-08-31

申请人： Tak Kui Wang ,  Chung-Yi Su

发明人： Tak Kui Wang ,  Chung-Yi Su

IPC分类号： G02B6/36 ,  G02B6/00

CPC分类号： G02B6/3817 ,  Y10T29/49174

摘要： A hybrid RJ-45 plug is provided that has both an electrical coupling configuration and an optical coupling configuration. The electrical coupling configuration is an 8P8C electrical wiring configuration that complies with the RJ-45 electrical wiring standard. The optical coupling configuration includes an optics system that provides the plug with optical communications capabilities. The hybrid RJ-45 plug is backwards compatible with an existing RJ-45 jack that implements an RJ-45 electrical wiring standard. However, the hybrid RJ-45 plug is also configured to mate with an optical jack that has only optical communications capabilities and to mate with a hybrid RJ-45 jack that has both optical and electrical communications capabilities.

摘要翻译： 提供了具有电耦合配置和光耦合配置的混合RJ-45插头。 电气耦合配置是符合RJ-45电气接线标准的8P8C电气接线配置。 光耦合配置包括向插头提供光通信能力的光学系统。 混合RJ-45插头与实现RJ-45电气接线标准的现有RJ-45插孔向后兼容。 然而，混合RJ-45插头也配置为与仅具有光通信能力的光插孔配合，并与具有光和电通信功能的混合RJ-45插孔配合。

公开(公告)号：US20120189254A1

公开(公告)日：2012-07-26

申请号：US13013928

申请日：2011-01-26

申请人： Tak Kui Wang ,  Chung-Yi Su

发明人： Tak Kui Wang ,  Chung-Yi Su

IPC分类号： G02B6/36 ,  H01R43/00

CPC分类号： G02B6/4246 ,  G02B6/3817 ,  G02B6/3885 ,  G02B6/4292 ,  Y10T29/49174

摘要： An electrical-to-optical and optical-to-electrical converter plug device includes a plug-shaped housing assembly, electrical contact fingers, a substantially planar circuit substrate, an optics block, and one or more opto-electronic conversion devices mounted on the circuit substrate. The opto-electronic signal conversion device has a device optical axis oriented normal to the circuit substrate and electrically coupled to the contact fingers. The optics block has a device optical port aligned with the device optical axis. The optics block has a fiber optical port oriented perpendicularly to the device optical axis. The optics block includes an optical reflector interposed in an optical path between the device optical port and the fiber optical port for redirecting an optical signal at an angle of substantially 90 degrees between a device optical port and a corresponding fiber optical port. An optical fiber can be coupled to the fiber optical port.

摘要翻译： 电 - 光和光 - 电转换器插头装置包括插塞形外壳组件，电接触指，基本平面的电路基板，光学块和安装在电路上的一个或多个光电转换装置 基质。 光电信号转换装置具有与电路基板垂直的装置光轴并且电耦合到接触指。 光学块具有与器件光轴对准的器件光学端口。 光学块具有垂直于器件光轴取向的光纤端口。 光学块包括插入设备光端口和光纤光端口之间的光路中的光反射器，用于在设备光端口和对应的光纤端口之间以大致90度的角度重定向光信号。 光纤可以耦合到光纤光端口。

公开(公告)号：US20120177375A1

公开(公告)日：2012-07-12

申请号：US13004016

申请日：2011-01-10

申请人： Tak K. Wang ,  Chung-Yi Su

发明人： Tak K. Wang ,  Chung-Yi Su

IPC分类号： H04B10/00 ,  G02B6/36 ,  H01R43/16 ,  H01R24/00

CPC分类号： H01R27/00 ,  G02B6/3817 ,  Y10T29/49204

摘要： A connector assembly is provided that has optical communications capabilities and high data rate electrical communications capabilities and that is backwards compatible with one or more USB standards. A socket of the connector assembly has high data rate electrical connections and USB electrical connections such that it is capable of supporting high data rate signaling protocols for high data rate devices as well as USB signaling protocols. A plug of the connector assembly has high data rate electrical connections, USB electrical connections, and an optical-to-electrical (OE)/electrical-to-optical (EO) conversion module. The socket can be mated with the plug of the invention and with USB plugs that are compliant with existing USB plugs. Thus, both the socket and the plug have backwards compatibility with one or more existing USB standards.

摘要翻译： 提供了具有光通信能力和高数据速率电通信能力并且向后兼容于一个或多个USB标准的连接器组件。 连接器组件的插座具有高数据速率电连接和USB电连接，使得其能够支持用于高数据速率设备以及USB信令协议的高数据速率信令协议。 连接器组件的插头具有高数据速率的电气连接，USB电连接以及光 - 电（OE）/电 - 光（EO）转换模块。 插座可以与本发明的插头和符合现有USB插头的USB插头配合。 因此，插座和插头都具有与一个或多个现有USB标准的向后兼容性。

公开(公告)号：US07672350B2

公开(公告)日：2010-03-02

申请号：US12164923

申请日：2008-06-30

申请人： Chen Ji ,  Chung-Yi Su

发明人： Chen Ji ,  Chung-Yi Su

IPC分类号： H01S5/00

CPC分类号： H01S5/1021 ,  H01S5/0658 ,  H01S5/1092 ,  H01S5/18358

摘要： A semiconductor device is provided that includes an optical feedback structure that is monolithically integrated with a VCSEL device and which extends the speed of the VCSEL device beyond the speed to which it would otherwise be limited due to relaxation oscillation. The optical feedback structure does not rely on light emissions from the VCSEL substrate material to produce optical feedback. Consequently, extension of the bandwidth of the semiconductor device through the use of optical feedback is not limited by the absorption threshold wavelength of the substrate material. Furthermore, because the optical feedback structure does not include the substrate, the ability to use optical feedback to extend the bandwidth of the device is independent of the precision with which the substrate thickness can be controlled.

摘要翻译： 提供了一种半导体器件，其包括与VCSEL器件单片集成的光学反馈结构，并且将VCSEL器件的速度延伸超过由于弛豫振荡否则将被限制的速度。 光学反馈结构不依赖于来自VCSEL衬底材料的光发射以产生光学反馈。 因此，通过使用光学反馈来扩展半导体器件的带宽不受衬底材料的吸收阈值波长的限制。 此外，由于光学反馈结构不包括衬底，所以使用光学反馈来扩展器件的带宽的能力与可以控制衬底厚度的精度无关。

公开(公告)号：US20090323751A1

公开(公告)日：2009-12-31

申请号：US12164923

申请日：2008-06-30

申请人： Chen Ji ,  Chung-Yi Su

发明人： Chen Ji ,  Chung-Yi Su

IPC分类号： H01S5/183 ,  H01S5/026

CPC分类号： H01S5/1021 ,  H01S5/0658 ,  H01S5/1092 ,  H01S5/18358

摘要： A semiconductor device is provided that includes an optical feedback structure that is monolithically integrated with a VCSEL device and which extends the speed of the VCSEL device beyond the speed to which it would otherwise be limited due to relaxation oscillation. The optical feedback structure does not rely on light emissions from the VCSEL substrate material to produce optical feedback. Consequently, extension of the bandwidth of the semiconductor device through the use of optical feedback is not limited by the absorption threshold wavelength of the substrate material. Furthermore, because the optical feedback structure does not include the substrate, the ability to use optical feedback to extend the bandwidth of the device is independent of the precision with which the substrate thickness can be controlled.

摘要翻译： 提供了一种半导体器件，其包括与VCSEL器件单片集成的光学反馈结构，并且将VCSEL器件的速度延伸超过由于弛豫振荡否则将被限制的速度。 光学反馈结构不依赖于来自VCSEL衬底材料的光发射以产生光学反馈。 因此，通过使用光学反馈来扩展半导体器件的带宽不受衬底材料的吸收阈值波长的限制。 此外，由于光学反馈结构不包括衬底，所以使用光学反馈来扩展器件的带宽的能力与可以控制衬底厚度的精度无关。

公开(公告)号：US4855696A

公开(公告)日：1989-08-08

申请号：US130825

申请日：1987-12-09

申请人： Michael Tan ,  Chung-Yi Su ,  William J. Anklam

发明人： Michael Tan ,  Chung-Yi Su ,  William J. Anklam

IPC分类号： H03K3/86 ,  H03K5/12 ,  H03K17/80

CPC分类号： H03K17/80 ,  H03K5/12

摘要： A pulse compressor consisting of a loaded transmission line having a pluraltiy of sections which have a ratio of dispersion to nonlinearity that decreases in the direction of pulse transmission.

公开(公告)号：US08712196B2

公开(公告)日：2014-04-29

申请号：US13554785

申请日：2012-07-20

申请人： Alain Zhi Shang ,  Chung-Yi Su

发明人： Alain Zhi Shang ,  Chung-Yi Su

IPC分类号： G02B6/00 ,  G02B6/12

CPC分类号： G02B6/3895 ,  H04B10/40

摘要： An optical cable system includes switching circuitry, a resistance network, optical-to-electrical conversion circuitry, and electrical-to-optical conversion circuitry. The electrical-to-optical conversion circuitry can convert an electrical transmit signal into an optical transmit signal. When the optical-to-electrical conversion circuitry detects a received optical signal having an optical power exceeding a threshold, the optical-to-electrical conversion circuitry produces a switching signal that causes the switching circuitry to couple the resistance network to a terminal or other node associated with the electrical transmit signal, thereby changing the impedance at that node as perceived by plug-in detection circuitry of a device such as a computer or peripheral.

摘要翻译： 光缆系统包括开关电路，电阻网络，光电转换电路和电 - 光转换电路。 电 - 光转换电路可以将电传输信号转换为光发射信号。 当光电转换电路检测到具有超过阈值的光功率的接收光信号时，光电转换电路产生切换信号，其使开关电路将电阻网络耦合到终端或其他节点 与电传输信号相关联，从而改变在诸如计算机或外围设备的插件检测电路所感知的该节点处的阻抗。