发明授权
US5612551A AlPSb/InP single heterojunction bipolar transistor on InP substrate for
high-speed, high-power applications
失效
AlPb / InP单异质结双极晶体管在InP衬底上用于高速，大功率应用
- 专利标题： AlPSb/InP single heterojunction bipolar transistor on InP substrate for high-speed, high-power applications
- 专利标题（中）： AlPb / InP单异质结双极晶体管在InP衬底上用于高速，大功率应用
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申请号： US672210申请日： 1996-06-27
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公开(公告)号： US5612551A公开(公告)日： 1997-03-18
- 发明人: Takyiu Liu , Chanh Nguyen , Mehran Matloubian
- 申请人： Takyiu Liu , Chanh Nguyen , Mehran Matloubian
- 申请人地址： CA Los Angeles
- 专利权人： Hughes Electronics
- 当前专利权人： Hughes Electronics
- 当前专利权人地址： CA Los Angeles
- 主分类号： H01L29/73
- IPC分类号： H01L29/73 ; H01L21/203 ; H01L21/331 ; H01L29/201 ; H01L29/205 ; H01L29/737 ; H01L31/0328
摘要：
An epitaxial structure and method of manufacture for a single heterojunction bipolar transistor capable of being utilized in high-speed and high-power applications. Preferably, the epitaxial structure comprises an N-type collector made from InP, a P-type base made from InP, and an N-type emitter made from a semiconductor material of approximately 39 mole percent AlP and approximately 61 mole percent Sb.
公开/授权文献
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