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    Method of growing high breakdown voltage allnas layers in InP devices by low temperature molecular beam epitaxy
    6.
    发明授权
    Method of growing high breakdown voltage allnas layers in InP devices by low temperature molecular beam epitaxy 失效
    通过低温分子束外延在InP器件中生长高击穿电压全能层的方法

    公开(公告)号：US5603765A

    公开(公告)日：1997-02-18

    申请号：US507744

    申请日：1995-04-21

    申请人： Mehran Matloubian ,  Linda M. Jelloian ,  Mark Lui ,  Takyiu Liu

    发明人： Mehran Matloubian ,  Linda M. Jelloian ,  Mark Lui ,  Takyiu Liu

    IPC分类号： H01L21/203 ,  H01L21/285 ,  H01L21/335 ,  H01L21/20

    CPC分类号： H01L29/66462 ,  H01L21/02392 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/28587

    摘要： High breakdown voltages for AlInAs layers in InP-based devices, such as a gate layer in an InP HEMT or a collector layer in a heterojunction bipolar transistor, are achieved by growing the AlInAs layer by MBE at a substrate temperature about 70.degree.-125.degree. C. below the temperature at which a 2.times.4 reflective high energy diffraction pattern is observed. This corresponds to a growth temperature range of about 415.degree.-470.degree. C. for a 540.degree. 2.times.4 reconstruction temperature. Preferred growth temperatures within these ranges are 80.degree. C. below the 2.times.4 reconstruction temperature, or about 460.degree. C. Higher breakdown voltages are obtained than when the AlInAs layer is grown at either higher or lower temperatures.

    摘要翻译： 在基于InP的器件中的AlInAs层的高击穿电压，例如InP HEMT中的栅极层或异质结双极晶体管中的集电极层，是通过在衬底温度约70°-125°下通过MBE生长AlInAs层来实现的 低于观察到2x4反射性高能衍射图案的温度。 这对应于在540°2×4重建温度下约415°-470℃的生长温度范围。 这些范围内的优选生长温度低于2x4重建温度或约460℃以下的80℃。获得比在更高或更低温度下生长AlInAs层的更高的击穿电压。

    Multiple pulse width modulation waveforms for plasma lamp
    7.
    发明授权
    Multiple pulse width modulation waveforms for plasma lamp 有权
    等离子灯的多脉冲宽度调制波形

    公开(公告)号：US08957593B2

    公开(公告)日：2015-02-17

    申请号：US13602030

    申请日：2012-08-31

    申请人： Timothy Brockett ,  David Schmelzer ,  Aric Dorschner ,  Jacob Portukalian ,  Mehran Matloubian

    发明人： Timothy Brockett ,  David Schmelzer ,  Aric Dorschner ,  Jacob Portukalian ,  Mehran Matloubian

    IPC分类号： H05B41/24 ,  H01J65/04

    CPC分类号： H01J65/042 ,  H05B41/2806 ,  H05B41/2813 ,  Y02B20/22

    摘要： This disclosure is directed to devices and methods for generating light with electrode-less plasma lamps. More particularly, the present invention provides plasma lamps driven by a radio-frequency source without the use of electrodes inside the bulb, and a pulse-width modulation device that provides RF power regulation, and related methods. The bulb comprises gaseous material with metal halides and/or light emitters that, when powered, substantially stays in an arc shape state. The switching pulse-width modulation device is operable at specific modulation frequencies, duty cycles, and durations to stabilize or control the arc state/mode, which enables consistent and high efficiencies.

    摘要翻译： 本公开涉及用无电极等离子体灯产生光的装置和方法。 更具体地说，本发明提供了不使用灯泡内部的电极的由射频源驱动的等离子体灯，以及提供RF功率调节的脉宽调制装置及相关方法。 灯泡包括具有金属卤化物和/或发光体的气体材料，当被供电时，该灯泡基本上保持在弧形状态。 开关脉宽调制装置可以在特定的调制频率，占空比和持续时间中工作，以稳定或控制电弧状态/模式，从而实现一致和高效率。

    Electrodeless lamps with grounded coupling elements
    8.
    发明授权
    Electrodeless lamps with grounded coupling elements 有权
    具有接地耦合元件的无电极灯

    公开(公告)号：US08674603B2

    公开(公告)日：2014-03-18

    申请号：US13629462

    申请日：2012-09-27

    申请人： Frederick M. Espiau ,  Mehran Matloubian ,  Timothy J. Brockett ,  David Schmelzer

    发明人： Frederick M. Espiau ,  Mehran Matloubian ,  Timothy J. Brockett ,  David Schmelzer

    IPC分类号： H01J7/46

    CPC分类号： H01J65/04 ,  H01J65/044 ,  H05B41/2806 ,  Y02B20/22

    摘要： An electrodeless plasma lamp includes a bulb containing a gas-fill and light emitter(s) excited to produce light using radio-frequency (RF) energy. Input and output coupling elements separated from each other by a gap couple RF energy from an RF source to the bulb. One end of the input coupling element is electrically connected to an RF source while the other end is connected to ground. One end of the output coupling element is connected to ground while the other end is connected to the bulb.

    摘要翻译： 一种无电极等离子体灯包括一个灯泡，其中包含一个被激发以产生使用射频（RF）能量的光的气体填充物和发光体。 输入和输出耦合元件通过间隙将RF能量从RF源耦合到灯泡。 输入耦合元件的一端电连接到RF源，而另一端连接到地。 输出耦合元件的一端连接到地，而另一端连接到灯泡。

    Electrodeless Plasma Lamp Array
    9.
    发明申请
    Electrodeless Plasma Lamp Array 有权
    无电极等离子灯阵列

    公开(公告)号：US20110204791A1

    公开(公告)日：2011-08-25

    申请号：US12814321

    申请日：2010-06-11

    申请人： Douglas A. Doughty ,  Mehran Matloubian ,  Frederick M. Espiau

    发明人： Douglas A. Doughty ,  Mehran Matloubian ,  Frederick M. Espiau

    IPC分类号： H05B41/24 ,  H01J7/24 ,  H05B41/36

    CPC分类号： H05B41/2806 ,  H01J65/044 ,  H05B41/39 ,  Y02B20/22

    摘要： An electrodeless plasma lamp array structure uses multiple plasma lamps to produce large amounts of electromagnetic radiation (visible, IR, UV, or a combination of visible, IR, and UV). An M by N array configuration is powered by either a single RF power source or multiple RF power sources. The array incorporates controllers to adjust the power delivered from the RF power source to each lamp within the array. By adjusting the delivered RF power, the intensity of electromagnetic radiation that is emitted from each lamp is controlled independently allowing for the creation of an array of lamps that emit electromagnetic radiation of varying intensity levels at different places within the array. Using lamps with different color temperatures as part of the array allows the color temperature and the color rendering index of the illumination to achieve different lighting conditions.

    摘要翻译： 无电极等离子体灯阵列结构使用多个等离子体灯产生大量的电磁辐射（可见光，IR，UV或可见光，IR和UV的组合）。 M / N阵列配置由单个RF电源或多个RF电源供电。 该阵列包含控制器，用于调整从RF电源传送到阵列内的每个灯的功率。 通过调节传送的RF功率，独立地控制从每个灯发射的电磁辐射的强度，允许产生在阵列内的不同位置发射不同强度水平的电磁辐射的灯阵列。 使用具有不同色温的灯作为阵列的一部分允许照明的色温和显色指数达到不同的照明条件。