发明授权
- 专利标题: Micromechanical accelerometer with plate-like semiconductor wafers
- 专利标题(中): 具有板状半导体晶片的微机械加速度计
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申请号: US587604申请日: 1996-01-02
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公开(公告)号: US5614742A公开(公告)日: 1997-03-25
- 发明人: Thomas Gessner , Martin Hafen , Eberhard Handrich , Peter Leinfelder , Bruno Ryrko , Egbert Vetter , Maik Wiemer
- 申请人: Thomas Gessner , Martin Hafen , Eberhard Handrich , Peter Leinfelder , Bruno Ryrko , Egbert Vetter , Maik Wiemer
- 申请人地址: DEX Freiburg im Breisgau
- 专利权人: LITEF GmbH
- 当前专利权人: LITEF GmbH
- 当前专利权人地址: DEX Freiburg im Breisgau
- 优先权: EPX93107287 19930505
- 主分类号: G01P15/08
- IPC分类号: G01P15/08 ; G01P15/125 ; H01L21/306 ; H01L29/84 ; H01L29/82
摘要:
A high precision micromechanical accelerometer comprises a layered structure of five (5) semiconductor wafers insulated from one another by thin oxide layers. The accelerometer is formed by first connecting a coverplate and a baseplate to associated insulating plates. Counter-electrodes, produced by anisotropic etching from the respective insulating plates, are fixed to the coverplate and the baseplate respectively. The counter-electrodes are contactable through the cover or baseplate via contact windows. A central wafer contains a unilaterally linked mass (pendulum) that is also produced by anisotropic etching and which serves as a movable central electrode of a differential capacitor. The layered structure is hermetically sealed by semiconductor fusion bonding. A stepped gradation from the top is formed at a wafer edge region for attaching contact pads to individual wafers to permit electrical contacting of individual wafers. The invention permits fabrication of a .mu.B device characterized by extremely small leakage capacitances and high temperature stability.
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