发明授权
- 专利标题: Semiconductor acceleration sensor with beam structure
- 专利标题(中): 具有梁结构的半导体加速度传感器
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申请号: US399345申请日: 1995-03-06
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公开(公告)号: US5619050A公开(公告)日: 1997-04-08
- 发明人: Hirofumi Uenoyama , Kenichi Ao , Masakazu Kanosue , Yasutoshi Suzuki , Yukihiro Takeuchi
- 申请人: Hirofumi Uenoyama , Kenichi Ao , Masakazu Kanosue , Yasutoshi Suzuki , Yukihiro Takeuchi
- 申请人地址: JPX Kariya
- 专利权人: Nippondenso Co., Ltd.
- 当前专利权人: Nippondenso Co., Ltd.
- 当前专利权人地址: JPX Kariya
- 优先权: JPX6-036140 19940307; JPX6-244397 19941007
- 主分类号: G01P15/125
- IPC分类号: G01P15/125 ; G01P15/08 ; G01P15/12 ; H01L29/84 ; H01L29/82
摘要:
A semiconductor acceleration sensor capable of reducing a leakage current and manufacturing method thereof is disclosed. A beam structure is disposed on a silicon substrate. The beam structure has a movable section, and the movable section is disposed spaced at a prescribed distance above silicon substrate. A movable electrode section is formed in one portion of movable section. Fixed electrodes made of an impurity diffusion layer are formed in silicon substrate to correspond to both sides of a movable electrode section. A peripheral circuit is formed in silicon substrate. The beam structure and the peripheral circuit are electrically connected by an electroconductive thin film, made of polysilicon. Then, when a voltage is applied to the beam structure, and a voltage is applied to both fixed electrodes, an inversion layer is formed, and an electrical current flows between the fixed electrodes. In the case where an acceleration is received and movable section is displaced, the electrical current flowing between the fixed electrodes changes.
公开/授权文献
- US4974059A Semiconductor high-power mosfet device 公开/授权日:1990-11-27