发明授权
- 专利标题: Bit line sensing in a memory array
- 专利标题(中): 存储器阵列中的位线检测
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申请号: US559695申请日: 1995-11-15
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公开(公告)号: US5619449A公开(公告)日: 1997-04-08
- 发明人: David H. McIntyre
- 申请人: David H. McIntyre
- 申请人地址: GBX Almondsbury Bristol
- 专利权人: SGS-Thomson Microelectronics Limited
- 当前专利权人: SGS-Thomson Microelectronics Limited
- 当前专利权人地址: GBX Almondsbury Bristol
- 优先权: GBX9423032 19941115
- 主分类号: G11C17/00
- IPC分类号: G11C17/00 ; G11C7/14 ; G11C11/401 ; G11C11/4099 ; G11C16/06 ; G11C16/28 ; G11C16/04
摘要:
A memory comprises first and second arrays of memory cells organised in rows and column. The cells in each row are connected to respective wordlines and the cells in each column are connected to a respective bit line. Wordlines of the first array are addressable independently of the wordlines of the second array. A sense amplifier is provided to sense the differential between a signal on the bit line of a selected cell in one array and a reference signal. A current souce is selectively connectable to supply the reference signal for comparison with the signal on the bit line of the addressed array. The present invention allows capacitive balancing to be achieved without the need for dummy cells.
公开/授权文献
- US5120100A Lifting and gripping apparatus 公开/授权日:1992-06-09
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