发明授权
- 专利标题： Method of forming a film for a multilayer Semiconductor device for improving thermal stability of cobalt silicide using platinum or nitrogen
- 专利标题（中）： 用于提高使用铂或氮的硅化钴的热稳定性的多层半导体器件的膜的形成方法
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申请号： US226923申请日： 1994-04-13
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公开(公告)号： US5624869A公开(公告)日： 1997-04-29
- 发明人: Paul D. Agnello , Cyril Cabral, Jr. , Lawrence A. Clevenger , Matthew W. Copel , Francois M. d'Heurle , Qi-Zhong Hong
- 申请人： Paul D. Agnello , Cyril Cabral, Jr. , Lawrence A. Clevenger , Matthew W. Copel , Francois M. d'Heurle , Qi-Zhong Hong
- 申请人地址： NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： NY Armonk
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/265 ; H01L21/285 ; H01L21/336 ; H01L29/78
摘要：
A method and a device directed to the same, for stabilizing cobalt di-silicide/single crystal silicon, amorphous silicon, polycrystalline silicon, germanide/crystalline germanium, polycrystalline germanium structures or other semiconductor material structures so that high temperature processing steps (above 750.degree. C.) do not degrade the structural quality of the cobalt di-silicide/silicon structure. The steps of the method include forming a di-silicide or germanide by either reacting cobalt with the substrate material and/or the codeposition of the di-silicide or germanide on a substrate, adding a selective element, either platinum or nitrogen, into the cobalt and forming the di-silicide or germanide by a standard annealing treatment. Alternatively, the cobalt di-silicide or cobalt germanide can be formed after the formation of the di-silicide or germanide respectively. As a result, the upper limit of the annealing temperature at which the di-silicide or germanide will structurally degrade is increased.
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