发明授权
- 专利标题: Electron beam lithography system with low brightness
- 专利标题(中): 电子束光刻系统具有低亮度
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申请号: US530448申请日: 1995-09-19
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公开(公告)号: US5633507A公开(公告)日: 1997-05-27
- 发明人: Hans C. Pfeiffer , Werner Stickel
- 申请人: Hans C. Pfeiffer , Werner Stickel
- 申请人地址: NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: NY Armonk
- 主分类号: H01J37/305
- IPC分类号: H01J37/305 ; H01J37/30 ; H01J37/317 ; H01L21/027
摘要:
An electron beam system for direct writing applications employs an electron gun having a large emitting surface compared to the prior art and a brightness approximately two orders of magnitude less than prior art systems to illuminate an initial aperture uniformly with a slightly diverging beam that passes efficiently through the aperture, a first set of controllable deflectors to scan the beam over the reticle parallel to the system axis, impressing the pattern of a subfield of the reticle in each exposure, in which a first variable axis lens focuses an image of the initial aperture on the reticle, a second variable axis lens collimates the patterned beam, a second set of controllable deflectors to bring the beam back to an appropriate position above the wafer, and a third variable axis lens to focus an image of the reticle subfield on the wafer, together with correction elements to apply aberration corrections that may vary with each subfield, thereby providing high throughput from the use of parallel processing of the order of 10.sup.7 pixels per subfield with the low aberration feature of the variable axis lens and the ability to tailor location-dependent corrections that are associated with gaussian systems that stitch the image pixel by pixel.
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