Electron beam projection lithography system (EBPS)
    1.
    发明授权
    Electron beam projection lithography system (EBPS) 失效
    电子束投影光刻系统(EBPS)

    公开(公告)号:US6069684A

    公开(公告)日:2000-05-30

    申请号:US17722

    申请日:1998-02-04

    摘要: Numerous largely unpredictable criticalities of operating parameters arise in electron beam projection lithography systems to maintain throughput comparable to optical projection lithography systems as minimum feature size is reduced below one-half micron and resolution requirements are increased. Using an electron beam projection lithography system having a high emittance electron source, variable axis lenses, curvilinear beam trajectory and constant reticle and/or target motion in a dual scanning mode wherein the target and/or wafer is constantly moved orthogonally to the direction of beam scan, high throughput is obtained consistent with 0.1 .mu.m feature size ground rules utilizing a column length of greater than 400 mm, a beam current of between about 4 and 35 .mu.A, a beam energy of between about 75 and 175 kV, a sub-field size between about 0.1 and 0.5 mm at the target at an optical reduction factor between about 3:1 and 5:1, a numerical aperture greater than 2 mrad and preferably between about 3 and 8 mrad and a scan length between about 20 mm and 55 mm. Reticle and target speed preferably differ by about the optical reduction factor.

    摘要翻译: 在电子束投影光刻系统中出现了大量不可预测的操作参数临界值,以保持与光学投影光刻系统相当的吞吐量,因为最小特征尺寸减小到小于0.5微米,并且分辨率要求增加。 使用具有高发射电子源,可变轴透镜,曲线光束轨迹和恒定掩模版和/或目标运动的双扫描模式的电子束投影光刻系统,其中目标和/或晶片与光束的方向不断地正交移动 扫描时,利用柱长度大于400mm,束电流在约4至35μA之间的光束电流,约75至175kV的光束能量,子像素 在大约3:1到5:1之间的光学还原因子的情况下,目标处的场强在大约0.1和0.5mm之间,数值孔径大于2mrad,优选地在大约3到8mrad之间,扫描长度在大约20mm 和55毫米。 掩模版和目标速度优选地相差约光学折射系数。

    Illumination deflection system for E-beam projection
    2.
    发明授权
    Illumination deflection system for E-beam projection 失效
    用于电子束投影的照明偏转系统

    公开(公告)号:US6005250A

    公开(公告)日:1999-12-21

    申请号:US138595

    申请日:1998-08-22

    摘要: An electron beam projection system comprises a source of an electron beam, a first doublet of condenser lenses with a first symmetry plane, a first aperture comprising a trim aperture located at the first symmetry plane of the first doublet also serving as a first blanking aperture. A second aperture comprises a shaping aperture located below the trim aperture. A second doublet of condenser lenses with a second symmetry plane is located below the second aperture, the second doublet having a symmetry plane. A third aperture is located at the symmetry plane of the second doublet wherein the third aperture comprises another blanking aperture. There are first blanking plates between the first condenser lens and the trim aperture, and second electrostatic alignment plates between the trim aperture and the second aperture. The second doublet comprises a pair of illuminator lenses including deflectors coaxial therewith and located inside the radius of the lenses and shielding rings located along the inner surfaces of the lenses, and correctors located coaxial with the deflectors and inside or outside of the radii thereof including stigmators, focus coils and a hexapole.

    摘要翻译: 电子束投影系统包括电子束源,具有第一对称平面的聚光透镜的第一双重透镜,第一孔包括位于第一双峰的第一对称平面处的微调孔,其也用作第一消隐孔。 第二孔包括位于修剪孔下方的成形孔。 具有第二对称平面的第二个具有第二对称平面的聚光透镜位于第二孔的下方,第二双峰具有对称平面。 第三孔位于第二双层的对称平面处,其中第三孔包括另一消隐孔。 在第一聚光透镜和调节孔之间存在第一遮挡板,以及在修剪孔和第二孔之间的第二静电对准板。 第二双层包括一对照明器透镜,其包括与其同轴的偏转器,位于透镜的半径内并且沿着透镜的内表面定位的屏蔽环,以及与偏转器同轴并且其半径的内部或外部的校正器包括标示器 ,聚焦线圈和六极。

    Projection reticle transmission control for coulomb interaction analysis
    3.
    发明授权
    Projection reticle transmission control for coulomb interaction analysis 失效
    用于库仑相互作用分析的投影掩模传输控制

    公开(公告)号:US5751004A

    公开(公告)日:1998-05-12

    申请号:US789675

    申请日:1997-01-24

    摘要: A method and system for studying the effect of electron-electron interaction in an electron beam writing system. First and second test reticles are provided that have different open areas. An electron beam is directed through the first test reticle to form a first pattern on a test surface, and the electron beam is then directed through the second test reticle to form a second pattern on a test surface. Because the open areas of the test reticles differ, the current of the electron beam is different when that beam passes through the first test reticle than when that beam passes through the second test reticle. The resolution of the first formed pattern is compared with the resolution of the second formed pattern to assess the effect of the different currents of the electron beam on the resolutions of the formed patterns.

    摘要翻译: 一种用于研究电子束写入系统中电子 - 电子相互作用效应的方法和系统。 提供具有不同开放面积的第一和第二测试标线。 电子束被引导通过第一测试掩模版以在测试表面上形成第一图案,然后电子束被引导通过第二测试光罩以在测试表面上形成第二图案。 由于测试光罩的开放区域不同,当光束通过第一测试光罩时,电子束的电流不同于当光束通过第二测试光罩时。 将第一形成图案的分辨率与第二形成图案的分辨率进行比较,以评估电子束的不同电流对形成的图案的分辨率的影响。

    Scattering reticle for electron beam systems
    4.
    发明授权
    Scattering reticle for electron beam systems 失效
    电子束系统散射光罩

    公开(公告)号:US5674413A

    公开(公告)日:1997-10-07

    申请号:US562252

    申请日:1995-11-22

    IPC分类号: G03F1/20 G03F9/00

    CPC分类号: G03F1/20

    摘要: A reticle for an electron beam system for direct writing applications has a base layer that contains a reticle pattern; a set of reinforcing struts connected to the base layer separating the base layer into a set of non-contiguous subfields; in which the pattern is carried by a set of apertures in said base layer; and in which the base thickness is set such that the probability that an electron traversing said base thickness will suffer a collision that removes it from the beam is greater than 90% while the probability that the electron will be absorbed is low; and in which, optionally, selected subfields of the reticle are compensated for errors in the remainder of the system.

    摘要翻译: 用于直接写入应用的电子束系统的掩模版具有含有标线图案的基层; 连接到基层的一组加强支柱,将基层分成一组不连续的子场; 其中所述图案由所述基底层中的一组孔承载; 并且其中基底厚度被设定为使得电子穿过所述基底厚度将遭受从光束移除它的碰撞的概率大于90%,而电子被吸收的概率较低; 并且其中可选地,掩模版的选定子场被补偿系统的其余部分中的错误。

    Electron beam lithography system with low brightness
    5.
    发明授权
    Electron beam lithography system with low brightness 失效
    电子束光刻系统具有低亮度

    公开(公告)号:US5633507A

    公开(公告)日:1997-05-27

    申请号:US530448

    申请日:1995-09-19

    摘要: An electron beam system for direct writing applications employs an electron gun having a large emitting surface compared to the prior art and a brightness approximately two orders of magnitude less than prior art systems to illuminate an initial aperture uniformly with a slightly diverging beam that passes efficiently through the aperture, a first set of controllable deflectors to scan the beam over the reticle parallel to the system axis, impressing the pattern of a subfield of the reticle in each exposure, in which a first variable axis lens focuses an image of the initial aperture on the reticle, a second variable axis lens collimates the patterned beam, a second set of controllable deflectors to bring the beam back to an appropriate position above the wafer, and a third variable axis lens to focus an image of the reticle subfield on the wafer, together with correction elements to apply aberration corrections that may vary with each subfield, thereby providing high throughput from the use of parallel processing of the order of 10.sup.7 pixels per subfield with the low aberration feature of the variable axis lens and the ability to tailor location-dependent corrections that are associated with gaussian systems that stitch the image pixel by pixel.

    摘要翻译: 用于直接写入应用的电子束系统采用与现有技术相比具有大的发射表面的电子枪,并且比现有技术的系统的亮度大约比现有技术系统稍微发光的光束均匀地照亮初始孔径大约两个数量级,该光束有效地通过 孔,第一组可控偏转器,用于扫描平行于系统轴线的光罩上的光束,在每次曝光中施加掩模版子像的图案,其中第一可变轴透镜将初始光圈的图像聚焦在 所述标线片,第二可变轴透镜对所述图案化光束进行准直,所述第二组可控偏转器将所述光束返回到所述晶片上方的适当位置;以及第三可变轴透镜,用于将所述标线片子场的图像聚焦在所述晶片上, 与校正元件一起应用可以随每个子场变化的像差校正,从而从t提供高通量 他使用具有可变轴透镜的低像差特征的每子场107个像素的并行处理,并且能够定制与高斯系统相关联的位置相关校正,该高斯系统逐像素地编码图像。

    Electron beam lithography system
    6.
    发明授权

    公开(公告)号:US5545902A

    公开(公告)日:1996-08-13

    申请号:US515437

    申请日:1995-08-15

    摘要: An electron beam system for direct writing applications combining the parallel throughput of a projection system and the stitching capability of a probe-forming system employs an electron gun to illuminate an initial aperture uniformly, a first set of controllable deflectors to scan the beam over the reticle parallel to the system axis, impressing the pattern of a subfield of the reticle in each exposure, in which a first variable axis lens focuses an image of the initial aperture on the reticle, a second variable axis lens collimates the patterned beam, a second set of controllable deflectors to bring the beam back to an appropriate position above the wafer, and a third variable axis lens to focus an image of the reticle subfield on the wafer, together with correction elements to apply aberration corrections that may vary with each subfield, thereby providing high throughput from the use of parallel processing of the order of 10.sup.7 pixels per subfield with the low aberration feature of the variable axis lens and the ability to tailor location-dependent corrections that are associated with gaussian systems that stitch the image pixel by pixel.

    Charged particle beam performance measurement system and method thereof
    8.
    发明授权
    Charged particle beam performance measurement system and method thereof 失效
    带电粒子束性能测量系统及其方法

    公开(公告)号:US5936252A

    公开(公告)日:1999-08-10

    申请号:US936353

    申请日:1997-09-24

    IPC分类号: H01J37/304

    摘要: A charged particle beam performance measurement system includes a charged particle beam generator device for producing a charged particle beam, a test reticle having at least two areas of higher transparency than its surroundings that form a pattern, a reduction projection imaging device, a reference target having an essentially identical pattern as the test reticle, and a beam current detector. A patterned beam is generated by passing the charged particle beam through the pattern areas of the test reticle. The patterned beam is reduced and projected by the reduction projection imaging device and the reduced patterned beam is imaged onto a reference target. The reduced patterned beam is then exposed to the reference target, wherein some of the beam may pass through reference target pattern areas. Beam current detector records and measures the amount of beam current that is absorbed on, back-scattered from, or transmitted by the target reference, and determines from the measured beam current the accuracy of the projection system.

    摘要翻译: 带电粒子束性能测量系统包括用于产生带电粒子束的带电粒子束发生器装置,具有至少两个比其形成图案的周围具有更高透明度的区域的测试掩模版,还原投影成像装置,具有 与测试掩模版基本相同的图案,以及光束电流检测器。 通过使带电粒子束通过测试掩模版的图案区域来产生图案化的束。 图案化的光束被还原投影成像装置减小和投射,并且缩小的图案化光束被成像到参考目标上。 然后将经缩小的图案化的光束暴露于参考目标,其中一些光束可以通过参考目标图案区域。 光束电流检测器记录并测量由目标基准吸收,反向散射或透射的束电流量,并根据测量的束电流确定投影系统的精度。

    Conductive coated semiconductor electrostatic deflection plates
    9.
    发明授权
    Conductive coated semiconductor electrostatic deflection plates 失效
    导电涂层半导体静电偏转板

    公开(公告)号:US4737644A

    公开(公告)日:1988-04-12

    申请号:US793046

    申请日:1985-10-30

    摘要: An electrostatic deflection plate for charged particle beam systems is formed of a planar semiconductive substrate having a conductive region at the substrate surface. The conductive region is diffused or implanted into the body of the substrate, or one or more conductive layers are deposited upon the substrate surface. The substrate material is preferably silicon and the diffused or implanted region is formed of a nonmagnetic, nonoxidizable metal such as gold or platinum. The deposited conductive region may be formed of a single layer of these or similar metals, one or more conductive underlayers with a nonmagnetic, nonoxidizable overlayer, a single or multilayer structure with a conductive oxide on the outermost layer, or a metallo-organic compound which forms a conductive layer during following heat treatment. The deflection plates are fabricated using conventional semiconductor processes and form durable structures which minimize eddy current effects.

    摘要翻译: 用于带电粒子束系统的静电偏转板由在基板表面具有导电区域的平面半导体基板形成。 导电区域被扩散或注入到衬底的主体中,或者一个或多个导电层沉积在衬底表面上。 基底材料优选为硅,并且扩散或注入的区域由非磁性,不可氧化的金属如金或铂形成。 沉积的导电区域可以由这些或类似金属的单层形成,一个或多个具有非磁性,不可氧化覆盖层的导电底层,在最外层具有导电氧化物的单层或多层结构或金属有机化合物, 在随后的热处理期间形成导电层。 偏转板使用传统的半导体工艺制造,并形成耐久结构,使涡流效应最小化。

    System for contactless electrical property testing of multi-layer
ceramics
    10.
    发明授权
    System for contactless electrical property testing of multi-layer ceramics 失效
    多层陶瓷非接触电性能试验系统

    公开(公告)号:US4417203A

    公开(公告)日:1983-11-22

    申请号:US267119

    申请日:1981-05-26

    CPC分类号: B82Y15/00 G01R31/305

    摘要: An electron beam system for non contact testing of three dimensional networks of conductors embedded in dielectric material, specifically detection of open and short circuit conditions. Top to bottom and top to top surface wiring is tested electrically without making physical electrical contact. The system comprises two flood beams and a focus probe beam wih one flood beam located at either side of the specimen. Proper choice of acceleration potentials, beam currents and dwell times of the beams allow alteration of the secondary electron emission from the specimen in such a way that electrical properties of the conductor networks can be measured directly. The difference in secondary electron emission resulting from different surface potentials is detected as a strong signal which allows clear discrimination between uninterrupted and interrupted as well as shorted pairs of conductors. This testing system can be applied to the high speed testing of advanced VLSI packaging substrates as well as to the greensheets, sublaminates, and laminates from which they are fabricated.

    摘要翻译: 用于非接触测试的电子束系统,用于嵌入介质材料的导体的三维网络,特别是开路和短路条件的检测。 从顶部到底部以及顶部到顶部的表面布线都进行电气测试,而不会进行物理电气接触。 该系统包括两个横梁和一个焦点探针光束,一个位于样品两侧的一个放射束。 正确选择加速电位,光束电流和停留时间可以改变样品的二次电子发射,从而可以直接测量导体网络的电气特性。 由不同表面电位产生的二次电子发射的差异被检测为强信号,其允许清晰地区分不间断的和中断的以及短路导体对。 该测试系统可以应用于高级VLSI封装基板的高速测试以及制造它们的绿色薄片,亚层压板和层压板。