摘要:
Numerous largely unpredictable criticalities of operating parameters arise in electron beam projection lithography systems to maintain throughput comparable to optical projection lithography systems as minimum feature size is reduced below one-half micron and resolution requirements are increased. Using an electron beam projection lithography system having a high emittance electron source, variable axis lenses, curvilinear beam trajectory and constant reticle and/or target motion in a dual scanning mode wherein the target and/or wafer is constantly moved orthogonally to the direction of beam scan, high throughput is obtained consistent with 0.1 .mu.m feature size ground rules utilizing a column length of greater than 400 mm, a beam current of between about 4 and 35 .mu.A, a beam energy of between about 75 and 175 kV, a sub-field size between about 0.1 and 0.5 mm at the target at an optical reduction factor between about 3:1 and 5:1, a numerical aperture greater than 2 mrad and preferably between about 3 and 8 mrad and a scan length between about 20 mm and 55 mm. Reticle and target speed preferably differ by about the optical reduction factor.
摘要:
An electron beam projection system comprises a source of an electron beam, a first doublet of condenser lenses with a first symmetry plane, a first aperture comprising a trim aperture located at the first symmetry plane of the first doublet also serving as a first blanking aperture. A second aperture comprises a shaping aperture located below the trim aperture. A second doublet of condenser lenses with a second symmetry plane is located below the second aperture, the second doublet having a symmetry plane. A third aperture is located at the symmetry plane of the second doublet wherein the third aperture comprises another blanking aperture. There are first blanking plates between the first condenser lens and the trim aperture, and second electrostatic alignment plates between the trim aperture and the second aperture. The second doublet comprises a pair of illuminator lenses including deflectors coaxial therewith and located inside the radius of the lenses and shielding rings located along the inner surfaces of the lenses, and correctors located coaxial with the deflectors and inside or outside of the radii thereof including stigmators, focus coils and a hexapole.
摘要:
A method and system for studying the effect of electron-electron interaction in an electron beam writing system. First and second test reticles are provided that have different open areas. An electron beam is directed through the first test reticle to form a first pattern on a test surface, and the electron beam is then directed through the second test reticle to form a second pattern on a test surface. Because the open areas of the test reticles differ, the current of the electron beam is different when that beam passes through the first test reticle than when that beam passes through the second test reticle. The resolution of the first formed pattern is compared with the resolution of the second formed pattern to assess the effect of the different currents of the electron beam on the resolutions of the formed patterns.
摘要:
A reticle for an electron beam system for direct writing applications has a base layer that contains a reticle pattern; a set of reinforcing struts connected to the base layer separating the base layer into a set of non-contiguous subfields; in which the pattern is carried by a set of apertures in said base layer; and in which the base thickness is set such that the probability that an electron traversing said base thickness will suffer a collision that removes it from the beam is greater than 90% while the probability that the electron will be absorbed is low; and in which, optionally, selected subfields of the reticle are compensated for errors in the remainder of the system.
摘要:
An electron beam system for direct writing applications employs an electron gun having a large emitting surface compared to the prior art and a brightness approximately two orders of magnitude less than prior art systems to illuminate an initial aperture uniformly with a slightly diverging beam that passes efficiently through the aperture, a first set of controllable deflectors to scan the beam over the reticle parallel to the system axis, impressing the pattern of a subfield of the reticle in each exposure, in which a first variable axis lens focuses an image of the initial aperture on the reticle, a second variable axis lens collimates the patterned beam, a second set of controllable deflectors to bring the beam back to an appropriate position above the wafer, and a third variable axis lens to focus an image of the reticle subfield on the wafer, together with correction elements to apply aberration corrections that may vary with each subfield, thereby providing high throughput from the use of parallel processing of the order of 10.sup.7 pixels per subfield with the low aberration feature of the variable axis lens and the ability to tailor location-dependent corrections that are associated with gaussian systems that stitch the image pixel by pixel.
摘要:
An electron beam system for direct writing applications combining the parallel throughput of a projection system and the stitching capability of a probe-forming system employs an electron gun to illuminate an initial aperture uniformly, a first set of controllable deflectors to scan the beam over the reticle parallel to the system axis, impressing the pattern of a subfield of the reticle in each exposure, in which a first variable axis lens focuses an image of the initial aperture on the reticle, a second variable axis lens collimates the patterned beam, a second set of controllable deflectors to bring the beam back to an appropriate position above the wafer, and a third variable axis lens to focus an image of the reticle subfield on the wafer, together with correction elements to apply aberration corrections that may vary with each subfield, thereby providing high throughput from the use of parallel processing of the order of 10.sup.7 pixels per subfield with the low aberration feature of the variable axis lens and the ability to tailor location-dependent corrections that are associated with gaussian systems that stitch the image pixel by pixel.
摘要:
The presence of magnetic fields from lenses and other (e.g. parasitic) sources at locations in a charged particle beam system such as the charged particle emitter, where the particles have little or no kinetic energy, creates disturbances of the charged particle trajectories, generating undesired angular momentum and resulting in excessive aberrations and associated adverse effects on system performance. Solutions are provided by suppression of these magnetic fields, by relocating the charged particle emitter away from the field source and/or counterbalancing the field with a bucking field. In addition, residual irrepressible field asymmetries are compensated by a suitable element such as a stigmator located at the correct location in the beam path, permitted by relocation of the charged particle emitter.
摘要:
A charged particle beam performance measurement system includes a charged particle beam generator device for producing a charged particle beam, a test reticle having at least two areas of higher transparency than its surroundings that form a pattern, a reduction projection imaging device, a reference target having an essentially identical pattern as the test reticle, and a beam current detector. A patterned beam is generated by passing the charged particle beam through the pattern areas of the test reticle. The patterned beam is reduced and projected by the reduction projection imaging device and the reduced patterned beam is imaged onto a reference target. The reduced patterned beam is then exposed to the reference target, wherein some of the beam may pass through reference target pattern areas. Beam current detector records and measures the amount of beam current that is absorbed on, back-scattered from, or transmitted by the target reference, and determines from the measured beam current the accuracy of the projection system.
摘要:
An electrostatic deflection plate for charged particle beam systems is formed of a planar semiconductive substrate having a conductive region at the substrate surface. The conductive region is diffused or implanted into the body of the substrate, or one or more conductive layers are deposited upon the substrate surface. The substrate material is preferably silicon and the diffused or implanted region is formed of a nonmagnetic, nonoxidizable metal such as gold or platinum. The deposited conductive region may be formed of a single layer of these or similar metals, one or more conductive underlayers with a nonmagnetic, nonoxidizable overlayer, a single or multilayer structure with a conductive oxide on the outermost layer, or a metallo-organic compound which forms a conductive layer during following heat treatment. The deflection plates are fabricated using conventional semiconductor processes and form durable structures which minimize eddy current effects.
摘要:
An electron beam system for non contact testing of three dimensional networks of conductors embedded in dielectric material, specifically detection of open and short circuit conditions. Top to bottom and top to top surface wiring is tested electrically without making physical electrical contact. The system comprises two flood beams and a focus probe beam wih one flood beam located at either side of the specimen. Proper choice of acceleration potentials, beam currents and dwell times of the beams allow alteration of the secondary electron emission from the specimen in such a way that electrical properties of the conductor networks can be measured directly. The difference in secondary electron emission resulting from different surface potentials is detected as a strong signal which allows clear discrimination between uninterrupted and interrupted as well as shorted pairs of conductors. This testing system can be applied to the high speed testing of advanced VLSI packaging substrates as well as to the greensheets, sublaminates, and laminates from which they are fabricated.