发明授权
- 专利标题： Neuron MOSFET with different interpolysilicon oxide
- 专利标题（中）： 具有不同的多晶硅氧化物的神经元MOSFET
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申请号： US667609申请日： 1996-06-21
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公开(公告)号： US5633520A公开(公告)日： 1997-05-27
- 发明人: Chung-Cheng Wu , Ming-Tzong Yang
- 申请人： Chung-Cheng Wu , Ming-Tzong Yang
- 申请人地址： TWX Hsin-Chu
- 专利权人： United Microelectronics Corporation
- 当前专利权人： United Microelectronics Corporation
- 当前专利权人地址： TWX Hsin-Chu
- 主分类号： H01L21/822
- IPC分类号： H01L21/822 ; H01L27/115 ; H01L27/108 ; H01L29/76 ; H01L29/788
摘要：
An MOSFET device is fabricated with a plurality of conductors capacitively coupled to a first electrode, forming a mask on the surface of the first electrode exposing a predetermined zone of the first electrode, doping the first electrode through the mask, removing the mask from the surface of the first electrode, oxidizing the first electrode to form a layer of oxide over the first electrode with a thicker layer of oxide over the predetermined zone and a thinner layer of oxide elsewhere, forming at least one electrode over the first electrode on the thinner layer of oxide outside of the zone and forming at least one other electrode over the first electrode on the thicker layer of oxide inside the zone, whereby the one electrode and the other electrode have substantially different capacitive coupling to the electrode.
公开/授权文献
- USD286840S Cordial goblet 公开/授权日：1986-11-25
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