发明授权
- 专利标题: Apparatus for plasma-assisted high rate electron beam vaporization
- 专利标题(中): 等离子体辅助高速电子束蒸发装置
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申请号: US416869申请日: 1995-06-12
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公开(公告)号: US5635087A公开(公告)日: 1997-06-03
- 发明人: Siegfried Schiller , Manfred Neumann , Henry Morgner
- 申请人: Siegfried Schiller , Manfred Neumann , Henry Morgner
- 申请人地址: DEX Munich
- 专利权人: Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V.
- 当前专利权人: Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V.
- 当前专利权人地址: DEX Munich
- 优先权: DEX4235199.5 19921019
- 主分类号: C23C14/30
- IPC分类号: C23C14/30 ; C23C14/10 ; C23C14/32 ; C23C14/54 ; H01J37/305 ; B23K10/00
摘要:
It is known that improved coating properties can be obtained by plasma action in vacuum deposition, especially by vaporization. Substantially higher coating rates can be attained in vapor deposition, but, with high plasma densities, they result in excessive scattering of the electron beam and reduce the power density. According to the invention, a plasma source, preferably a hollow cathode are source, is arranged in the immediate vicinity of the substrate. Between the evaporator and the substrate there is a device for generating a magnetic field so that the region of high plasma density is separated from the evaporator and the electron beam by the magnetic field. The boundary field lines of this magnetic field run along an arc curving with respect to the substrate.
公开/授权文献
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