发明授权
- 专利标题： High performance drive structure for MOSFET power switches
- 专利标题（中）： MOSFET功率开关的高性能驱动结构
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申请号： US278479申请日： 1994-07-20
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公开(公告)号： US5635867A公开(公告)日： 1997-06-03
- 发明人: Kenneth J. Timm
- 申请人： Kenneth J. Timm
- 申请人地址： NJ Murray Hill
- 专利权人： Lucent Technologies Inc.
- 当前专利权人： Lucent Technologies Inc.
- 当前专利权人地址： NJ Murray Hill
- 主分类号： H03K17/687
- IPC分类号： H03K17/687 ; H03K17/00 ; H03K17/691 ; H03K19/017 ; H03K19/0175 ; H03K17/04
摘要：
A high performance isolated gate drive circuit for driving MOSFET is disclosed which uses a MOSFET pull-down device, provides unusually low gate discharge impedance, exceptionally fast turn-off of the controlled switch and reduced power dissipation in the overall gate drive circuit. It also provides superior off-time noise immunity.
公开/授权文献
- US4955068A Leaf disposal bag 公开/授权日：1990-09-04
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