发明授权
- 专利标题: Fluorine doped plasma enhanced phospho-silicate glass, and process
- 专利标题(中): 氟掺杂等离子体增强磷硅玻璃及其工艺
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申请号: US563165申请日: 1995-11-27
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公开(公告)号: US5643640A公开(公告)日: 1997-07-01
- 发明人: Ashima B. Chakravarti , Terry M. Cheng , Son Van Nguyen , Michael Shapiro
- 申请人: Ashima B. Chakravarti , Terry M. Cheng , Son Van Nguyen , Michael Shapiro
- 申请人地址: NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: NY Armonk
- 主分类号: C03C3/112
- IPC分类号: C03C3/112 ; C23C16/40 ; B05D3/06
摘要:
A fluorinated phosphosilicate glass (FPSG) is produced in a plasma-enhanced chemical vapor deposition process (PECVD) in which the plasma source comprises conventional phosphosilicate glass-forming materials together with one or more fluorine gas-forming materials. The deposited fluorine-gas enhances the filling of gaps or voids with dielectric glass compositions by etching the top of the via holes or gaps during the filling operation. The present fluorine-doped phosphosilicate glass compositions are stable compared to conventional phosphosilicate glass compositions which are relatively unstable and unsatisfactory for use as gap-filling dielectric glass compositions.
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