发明授权
US5643823A Application of thin crystalline Si.sub.3 N.sub.4 liners in shallow
trench isolation (STI) structures
失效
薄晶体Si3N4衬垫在浅沟槽隔离（STI）结构中的应用
- 专利标题： Application of thin crystalline Si.sub.3 N.sub.4 liners in shallow trench isolation (STI) structures
- 专利标题（中）： 薄晶体Si3N4衬垫在浅沟槽隔离（STI）结构中的应用
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申请号： US531844申请日： 1995-09-21
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公开(公告)号： US5643823A公开(公告)日： 1997-07-01
- 发明人: Herbert Ho , Erwin Hammerl , David M. Dobuzinsky , J. Herbert Palm , Stephen Fugardi , Atul Ajmera , James F. Moseman , Samuel C. Ramac
- 申请人： Herbert Ho , Erwin Hammerl , David M. Dobuzinsky , J. Herbert Palm , Stephen Fugardi , Atul Ajmera , James F. Moseman , Samuel C. Ramac
- 申请人地址： DEX Munich NY Armonk
- 专利权人： Siemens Aktiengesellschaft,International Business Machines Corporation
- 当前专利权人： Siemens Aktiengesellschaft,International Business Machines Corporation
- 当前专利权人地址： DEX Munich NY Armonk
- 主分类号： H01L21/76
- IPC分类号： H01L21/76 ; H01L21/3105 ; H01L21/318 ; H01L21/32 ; H01L21/762
摘要：
Silicon integrated circuits use a crystalline layer of silicon nitride (Si.sub.3 N.sub.4) in shallow trench isolation (STI) structures as an O.sub.2 -barrier film. The crystalline Si.sub.3 N.sub.4 lowers the density of electron traps as compared with as-deposited, amorphous Si.sub.3 N.sub.4. Further, a larger range of low-pressure chemical-vapor deposited (LPCVD) Si.sub.3 N.sub.4 films can be deposited, providing a larger processing window for thickness controllability. An LPCVD-Si.sub.3 N.sub.4 film is deposited at temperatures of 720.degree. C. to 780.degree. C. The deposited film is in an amorphous state. Subsequently, a high-temperatures rapid-thermal anneal in pure nitrogen or ammonia is conducted at 1050.degree. C. to 1100.degree. C. for 60 seconds.
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