发明授权
US5646431A Surface breakdown reduction by counter-doped island in power mosfet
失效
功率mosfet中的反掺杂岛的表面击穿减少
- 专利标题: Surface breakdown reduction by counter-doped island in power mosfet
- 专利标题(中): 功率mosfet中的反掺杂岛的表面击穿减少
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申请号: US608385申请日: 1996-02-28
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公开(公告)号: US5646431A公开(公告)日: 1997-07-08
- 发明人: Ching-Hsiang Hsu , Da-Chi Kuo
- 申请人: Ching-Hsiang Hsu , Da-Chi Kuo
- 申请人地址: TWX Hsin-Chu
- 专利权人: United Microelectronics Corporation
- 当前专利权人: United Microelectronics Corporation
- 当前专利权人地址: TWX Hsin-Chu
- 主分类号: H01L21/336
- IPC分类号: H01L21/336 ; H01L29/06 ; H01L29/08 ; H01L29/78 ; H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113
摘要:
A metal oxide semiconductor field effect transistor with a lightly doped silicon substrate includes an oppositely doped well and oppositely doped source region and oppositely doped drain region with respect to the lightly doped substrate, the improvement comprising at least one counter doped region formed along the surface of the oppositely doped well between the source and drain regions. The substrate comprises a P-substrate, the well comprises an N- well and the counter doped region is doped P; the counterdoped region comprises an island among a plurality of islands between the source region and the drain region. The counterdoped region comprises an island among a plurality of islands between the source region and the drain region.
公开/授权文献
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