发明授权
US5650641A Semiconductor device having group III nitride compound and enabling
control of emission color, and flat display comprising such device
失效
具有III族氮化物化合物并且能够控制发光颜色的半导体器件,以及包括这种器件的平面显示器
- 专利标题: Semiconductor device having group III nitride compound and enabling control of emission color, and flat display comprising such device
- 专利标题(中): 具有III族氮化物化合物并且能够控制发光颜色的半导体器件,以及包括这种器件的平面显示器
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申请号: US522110申请日: 1995-08-31
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公开(公告)号: US5650641A公开(公告)日: 1997-07-22
- 发明人: Michinari Sassa , Masayoshi Koike , Katsuhide Manabe , Norikatsu Koide , Hisaki Kato , Naoki Shibata , Makoto Asai , Shinya Asami
- 申请人: Michinari Sassa , Masayoshi Koike , Katsuhide Manabe , Norikatsu Koide , Hisaki Kato , Naoki Shibata , Makoto Asai , Shinya Asami
- 申请人地址: JPX Aichi
- 专利权人: Toyoda Gosei Co., Ltd.
- 当前专利权人: Toyoda Gosei Co., Ltd.
- 当前专利权人地址: JPX Aichi
- 优先权: JPX6-234122 19940901; JPX6-248838 19940916; JPX6-248839 19940916; JPX6-248840 19940916; JPX6-338503 19941228
- 主分类号: H01L33/02
- IPC分类号: H01L33/02 ; H01L33/32 ; H01L33/00
摘要:
A light-emitting semiconductor device (100) suitable for use in multi-color flat panel displays includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n.sup.+ -layer (3) of high carrier (n-type) concentration, a Si-doped (Al.sub.x2 Ga.sub.1 -x.sub.2).sub.y2 In.sub.1-2 N n.sup.+ -layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped p-type (Al.sub.x1 Ga.sub.1-x1).sub.y1 In.sub.1-y1 N emission layer (5), and a Mg-doped (Al.sub.x2 Ga.sub.1-x2).sub.y2 In.sub.1-y2 N p-layer (6). The AlN layer (2) has a 500 .ANG. thickness. The GaN n.sup.+ -layer (3) is about a 2.0 .mu.m thick and has a 2.times.10.sup.18 /cm.sup.3 electron concentration. The n.sup.+ -layer (4) is about a 2.0 .mu.m in thickness and has a 2.times.10.sup.18 /cm.sup.3 electron concentration. The emission layer (5) is about 0.5 .mu.m thick. The p-layer 6 is about 1.0 .mu.m thick and has a 2.times.10.sup.17 /cm.sup.3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n.sup.+ -layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8). Green light emission is obtained by this constitution. Further, only doping Zn of 5.times.10.sup.19 /cm.sup.3 into the emission layer (5) enables red light emission.
公开/授权文献
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