公开(公告)号：US07030414B2

公开(公告)日：2006-04-18

申请号：US10472544

申请日：2002-04-22

申请人： Shinya Asami ,  Hiroshi Watanabe ,  Jun Ito ,  Naoki Shibata

发明人： Shinya Asami ,  Hiroshi Watanabe ,  Jun Ito ,  Naoki Shibata

IPC分类号： H01L27/15

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/007 ,  H01L33/06 ,  Y10S257/918

摘要： A Group III nitride compound semiconductor light-emitting device includes a multilayer having a quantum well structure containing an InGaN well layer and an AlGaN barrier layer. The film thickness, growth rate and growth temperature of the InGaN layer as the well layer and the film thickness of the AlGaN layer as the barrier layer are controlled to be optimized to thereby improve an output of the light-emitting device.

摘要翻译： III族氮化物化合物半导体发光器件包括具有包含InGaN阱层和AlGaN阻挡层的量子阱结构的多层。 控制作为阱层的InGaN层的膜厚度，生长速度和生长温度以及作为阻挡层的AlGaN层的膜厚度被优化，从而提高发光器件的输出。

公开(公告)号：US06872965B2

公开(公告)日：2005-03-29

申请号：US10020460

申请日：2001-12-18

申请人： Jun Ito ,  Toshiaki Chiyo ,  Naoki Shibata ,  Hiroshi Watanabe ,  Shizuyo Asami ,  Shinya Asami

发明人： Jun Ito ,  Toshiaki Chiyo ,  Naoki Shibata ,  Hiroshi Watanabe ,  Shizuyo Asami ,  Shinya Asami

IPC分类号： H01L33/00 ,  H01L29/06

CPC分类号： H01L33/007 ,  H01L33/0075

摘要： An undercoat layer inclusive of a metal nitride layer is formed on a substrate. Group III nitride compound semiconductor layers are formed on the undercoat layer continuously.

摘要翻译： 在基板上形成包含金属氮化物层的底涂层。 在内涂层上连续形成III族氮化物化合物半导体层。

公开(公告)号：US06623998B2

公开(公告)日：2003-09-23

申请号：US10304033

申请日：2002-11-26

申请人： Naoki Shibata ,  Toshiaki Chiyo ,  Masanobu Senda ,  Jun Ito ,  Hiroshi Watanabe ,  Shinya Asami ,  Shizuyo Asami

发明人： Naoki Shibata ,  Toshiaki Chiyo ,  Masanobu Senda ,  Jun Ito ,  Hiroshi Watanabe ,  Shinya Asami ,  Shizuyo Asami

IPC分类号： H01L2100

CPC分类号： H01L33/32 ,  H01L31/03042 ,  H01L31/03046 ,  H01L31/184 ,  H01L31/1852 ,  H01L33/12 ,  H01L33/22 ,  H01L33/405 ,  H01S5/32341 ,  Y02E10/544 ,  Y10S438/978

摘要： A method of manufacturing a group III nitride compound semiconductor device, includes providing a substrate, forming a group III nitride compound semiconductor layer having a device function, and forming an undercoat layer between the substrate and the group III nitride semiconductor layer, the undercoat layer having a surface of a peak and trough structure.

摘要翻译： 一种制造III族氮化物化合物半导体器件的方法，包括提供衬底，形成具有器件功能的III族氮化物化合物半导体层，以及在衬底和III族氮化物半导体层之间形成底涂层，底涂层具有 峰和槽结构的表面。

公开(公告)号：US06423984B1

公开(公告)日：2002-07-23

申请号：US09394527

申请日：1999-09-10

申请人： Hisaki Kato ,  Hiroshi Watanabe ,  Norikatsu Koide ,  Shinya Asami

发明人： Hisaki Kato ,  Hiroshi Watanabe ,  Norikatsu Koide ,  Shinya Asami

IPC分类号： H01L2978

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/32

摘要： A barrier layer made of AlxGa1−xN (0

摘要翻译： 在使用具有多量子阱（MQW）结构的氮化镓化合物的发光半导体器件中形成由Al x Ga 1-x N（0

公开(公告)号：US06326236B1

公开(公告)日：2001-12-04

申请号：US09497814

申请日：2000-02-03

申请人： Norikatsu Koide ,  Shinya Asami ,  Junichi Umezaki ,  Masayoshi Koike ,  Shiro Yamasaki ,  Seiji Nagai

发明人： Norikatsu Koide ,  Shinya Asami ,  Junichi Umezaki ,  Masayoshi Koike ,  Shiro Yamasaki ,  Seiji Nagai

IPC分类号： H01L2144

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L29/155 ,  H01L33/06 ,  Y10S438/933

摘要： In a method of manufacturing a semiconductor light-emitting device involving the steps of: forming a first semiconductor layer; forming a light-emitting layer of superlattice structure by laminating a barrier layer being made of InY1Ga1−Y1N (Y1≧0) and a quantum well layer being made of InY2Ga1−Y2N (Y2>Y1 and Y2>0) on the first semiconductor layer; and forming a second semiconductor layer on the light-emitting layer, an uppermost barrier layer, which will become an uppermost layer of the light-emitting layer, is made thicker than the other barrier layers. Further, at the time of forming the second semiconductor layer, an upper surface of such uppermost barrier layer is caused to disappear so that the thickness of the uppermost barrier layer becomes substantially equal to those of the other barrier layers.

公开(公告)号：US06288416B1

公开(公告)日：2001-09-11

申请号：US09346935

申请日：1999-07-02

申请人： Masayoshi Koike ,  Shinya Asami

发明人： Masayoshi Koike ,  Shinya Asami

IPC分类号： H01L3300

CPC分类号： H01L33/325 ,  B82Y20/00 ,  H01L33/06

摘要： An emission layer (5) for a light source device is formed to have a multi-layer structure, doped with an acceptor and a donor impurity. The multi-layer structure may include a quantum well (QW) structure or a multi quantum well (MQW) structure (50). With such a structure, a peak wavelength of the light source can be controlled, because the distances between atoms of the acceptor and the donor impurities are widened. Several arrangements can be made by, e.g., altering the thickness of each composite layer of the multi-layer structure, altering their composition ratio, forming undoped layer 5 between the impurity doped layers, and so forth. Further, luminous intensity of ultra violet color can be improved, because doping the donor impurity and the acceptor impurity realizes a donor-acceptor emission mechanism and abundant carriers. Several arrangements can be made by, e.g., optimizing the materials of the composite layers, optimizing their composition ratios, optimizing their lattice constants, and so forth to further enhance the luminous intensity of the light source.

公开(公告)号：US06645785B2

公开(公告)日：2003-11-11

申请号：US09909895

申请日：2001-07-23

申请人： Masayoshi Koike ,  Shinya Asami

发明人： Masayoshi Koike ,  Shinya Asami

IPC分类号： H01L2100

CPC分类号： H01L33/325 ,  B82Y20/00 ,  H01L33/06

摘要： An emission layer (5) for a light source device is formed to have a multi-layer structure, doped with an acceptor and a donor impurity. The multi-layer structure may include a quantum well (QW) structure or a multi quantum well (MQW) structure (50). With such a structure, a peak wavelength of the light source can be controlled, because the distances between atoms of the acceptor and the donor impurities are widened. Several arrangements can be made by, e.g., altering the thickness of each composite layer of the multi-layer structure, altering their composition ratio, forming undoped layer 5 between the impurity doped layers, and so forth. Further, luminous intensity of ultra violet color can be improved, because doping the donor impurity and the acceptor impurity realizes a donor-acceptor emission mechanism and abundant carriers. Several arrangements can be made by, e.g., optimizing the materials of the composite layers, optimizing their composition ratios, optimizing their lattice constants, and so forth to further enhance the luminous intensity of the light source.

摘要翻译： 用于光源器件的发射层（5）形成为具有掺杂有受主和施主杂质的多层结构。 多层结构可以包括量子阱（QW）结构或多量子阱（MQW）结构（50）。 通过这样的结构，可以控制光源的峰值波长，因为受主的原子与供体杂质之间的距离变宽。 可以通过例如改变多层结构的每个复合层的厚度，改变它们的组成比，在杂质掺杂层之间形成未掺杂的层5等来进行几种布置。 此外，可以提高紫外线的发光强度，因为掺杂施主杂质和受主杂质实现了供体 - 受体发射机制和丰富的载体。 可以通过例如优化复合层的材料，优化其组成比，优化其晶格常数等来进行若干布置，以进一步增强光源的发光强度。

公开(公告)号：US06593016B1

公开(公告)日：2003-07-15

申请号：US09606081

申请日：2000-06-29

申请人： Toshiaki Chiyo ,  Naoki Shibata ,  Masanobu Senda ,  Jun Ito ,  Shizuyo Asami ,  Shinya Asami ,  Hiroshi Watanabe

发明人： Toshiaki Chiyo ,  Naoki Shibata ,  Masanobu Senda ,  Jun Ito ,  Shizuyo Asami ,  Shinya Asami ,  Hiroshi Watanabe

IPC分类号： H01L2900

CPC分类号： C30B29/406 ,  C30B25/02 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/32 ,  H01S5/32341 ,  Y10T428/265

摘要： A group III nitride compound semiconductor device has a substrate and an AlN single crystal layer formed on the substrate. The AlN single crystal layer has a thickness of from 0.5 to 3 &mgr;m and has a substantially flat surface. The half-value width of an X-ray rocking curve of the AlN single crystal layer is not longer than 50 sec. In another device, a group III nitride compound semiconductor layer having a thickness of from 0.01 to 3.2 &mgr;m is grown at a temperature of from 1000 to 1180° C. on a sapphire substrate having a surface nitride layer having a thickness of not larger than 300 Å.

摘要翻译： III族氮化物化合物半导体器件具有在衬底上形成的衬底和AlN单晶层。 AlN单晶层的厚度为0.5〜3μm，具有大致平坦的表面。 AlN单晶层的X射线摇摆曲线的半值宽度不大于50秒。 在另一种器件中，在具有厚度不大于300的表面氮化物层的蓝宝石衬底上，在1000至1180℃的温度下生长具有0.01至3.2μm厚度的III族氮化物化合物半导体层 一个。

公开(公告)号：US6040588A

公开(公告)日：2000-03-21

申请号：US925325

申请日：1997-09-08

申请人： Norikatsu Koide ,  Shinya Asami ,  Junichi Umezaki ,  Masayoshi Koike ,  Shiro Yamasaki ,  Seiji Nagai

发明人： Norikatsu Koide ,  Shinya Asami ,  Junichi Umezaki ,  Masayoshi Koike ,  Shiro Yamasaki ,  Seiji Nagai

IPC分类号： H01L29/15 ,  H01L33/06 ,  H01L33/32 ,  H01L33/40 ,  H01S5/00 ,  H01S5/323 ,  H01S5/343 ,  H01L29/06 ,  H01L33/00

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L29/155 ,  H01L33/06 ,  Y10S438/933

摘要： A semiconductor light-emitting device involving the steps of: forming a first semiconductor layer; forming a light-emitting layer of superlattice structure by laminating a barrier layer being made of In.sub.Y1 Ga.sub.1-Y1 N (Y1.gtoreq.0) and a quantum well layer being made of In.sub.Y2 Ga.sub.1-Y1 N (Y2>Y1 and Y2>0) on the first semiconductor layer; and forming a second semiconductor layer on the light-emitting layer, an uppermost barrier layer, which will become an uppermost layer of the light-emitting layer, is made thicker than the other barrier layers. Further, at the time of forming the second semiconductor layer, an upper surface of such uppermost barrier layer is caused to disappear so that the thickness of the uppermost barrier layer becomes substantially equal to those of the other barrier layers.

摘要翻译： 一种半导体发光器件，包括以下步骤：形成第一半导体层; 通过层叠由InY1Ga1-Y1N（Y1> / = 0）构成的阻挡层和由InY2Ga1-Y1N（Y2> Y1和Y2> 0）构成的量子阱层，在第一层上形成超晶格结构的发光层 半导体层; 并且在发光层上形成第二半导体层，使作为发光层的最上层的最上层的阻挡层比其他阻挡层厚。 此外，在形成第二半导体层时，使最上层势垒层的上表面消失，使得最上阻挡层的厚度变得基本上等于其它势垒层的厚度。

公开(公告)号：US5753939A

公开(公告)日：1998-05-19

申请号：US813393

申请日：1997-03-07

申请人： Michinari Sassa ,  Naoki Shibata ,  Shinya Asami ,  Masayoshi Koike ,  Junichi Umezaki ,  Takahiro Kozawa

发明人： Michinari Sassa ,  Naoki Shibata ,  Shinya Asami ,  Masayoshi Koike ,  Junichi Umezaki ,  Takahiro Kozawa

IPC分类号： H01L21/205 ,  H01L33/02 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/00

CPC分类号： H01L33/38 ,  H01L33/025 ,  H01L33/32 ,  H01L33/325 ,  H01L33/382 ,  H01L2933/0016 ,  H01L33/40

摘要： A light-emitting semiconductor device having an improved metal electrode and semiconductor structure that lowers the driving voltage of the device. The device has a hetero p-n junction structure. This structure includes: (1) an n-layer having n-type conduction and a Group III nitride compound semiconductor satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0, and x=y=0; (2) a p-layer having p-type conduction and a Group III nitride compound semiconductor satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0, and x=y=0; and (3) an emission layer disposed between the n-layer and the p-layer. The device also has a metal electrode and a contact layer that is disposed between the p-layer and the metal electrode. The contact layer is doped with an acceptor impurity more heavily that is the p-layer. The acceptor impurity may be magnesium (Mg). The contact layer may be doped within the range of 1.times.10.sup.20 /cm.sup.3 to 1.times.10.sup.2l /cm.sup.3 and may comprise a first and a second contact layer.

摘要翻译： 一种具有改善的金属电极和半导体结构的发光半导体器件，其降低了器件的驱动电压。 该器件具有异质p-n结结构。 该结构包括：（1）具有n型导电的n层和满足式Al x Ga y In 1-x-y N的III族氮化物半导体，包括x = 0，y = 0，x = y = 0; （2）具有p型导电的p层和满足式Al x Ga y In 1-x-y N的III族氮化物半导体，包括x = 0，y = 0，x = y = 0; 和（3）设置在n层和p层之间的发射层。 该器件还具有设置在p层和金属电极之间的金属电极和接触层。 接触层掺杂较多的受体杂质，即p层。 受主杂质可以是镁（Mg）。 接触层可以掺杂在1×10 20 / cm 3至1×102l / cm 3的范围内，并且可以包括第一和第二接触层。