发明授权
US5650689A Vacuum airtight device having NbN electrode structure incorporated
therein
失效
其中并入有NbN电极结构的真空密封装置
- 专利标题： Vacuum airtight device having NbN electrode structure incorporated therein
- 专利标题（中）： 其中并入有NbN电极结构的真空密封装置
-
申请号： US598420申请日： 1996-02-08
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公开(公告)号： US5650689A公开(公告)日： 1997-07-22
- 发明人: Shigeo Itoh , Teruo Watanabe , Kazuhiko Tsuburaya , Yoshihiko Hirata , Susumu Takada , Hiroshi Nakagawa
- 申请人： Shigeo Itoh , Teruo Watanabe , Kazuhiko Tsuburaya , Yoshihiko Hirata , Susumu Takada , Hiroshi Nakagawa
- 申请人地址： JPX Mobara JPX Tsukuba
- 专利权人： Futaba Denshi Kogyo K.K.,Agency of Industrial Science and Technology
- 当前专利权人： Futaba Denshi Kogyo K.K.,Agency of Industrial Science and Technology
- 当前专利权人地址： JPX Mobara JPX Tsukuba
- 优先权： JPX7-045115 19950210
- 主分类号： H01J9/02
- IPC分类号： H01J9/02 ; H01J1/304 ; H01J1/02 ; H01J1/14 ; H01J1/16 ; H01J19/10
摘要：
A field emission element including an electrode structure made of a thin film exhibiting increased adhesive strength. A thin film of niobium nitride (NbN) is formed on a glass substrate by sputtering or the like. The NbN film exhibits increased adhesive strength to a degree sufficient to prevent etching for formation of the film into electrodes from causing peeling of the film.
公开/授权文献
- US4584808A Concealable double acting fastener for wallboard 公开/授权日：1986-04-29
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