发明授权
- 专利标题： Method of manufacturing semiconductor device with contact structure
- 专利标题（中）： 具有接触结构的半导体器件的制造方法
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申请号： US264928申请日： 1994-06-24
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公开(公告)号： US5652180A公开(公告)日： 1997-07-29
- 发明人: Hiroshi Shinriki , Hiroshi Yamamoto , Nobuyuki Takeyasu , Takayuki Komiya , Tomohiro Ohta
- 申请人： Hiroshi Shinriki , Hiroshi Yamamoto , Nobuyuki Takeyasu , Takayuki Komiya , Tomohiro Ohta
- 申请人地址： JPX Kobe
- 专利权人： Kawasaki Steel Corporation
- 当前专利权人： Kawasaki Steel Corporation
- 当前专利权人地址： JPX Kobe
- 优先权： JPX5-157383 19930628; JPX6-089722 19940427
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L21/285
摘要：
A semiconductor device with a contact structure includes a silicon substrate, a diffusion region formed in a surface of the silicon substrate, a silicide film of high melting point metal deposited on the diffusion region, an insulating film formed on the silicon substrate, a contact hole formed in the insulating film such that the silicide film is exposed at a bottom of the contact hole, an anti-diffusion film formed on the exposed surface of the silicide film at the bottom of the contact film, a plug formed in the contact hole by a selective Al CVD, and a metal wiring formed on the insulating film such that the metal wiring is electrically connected to the diffusion region by means of the plug, anti-diffusion film and silicide film. The anti-diffusion film may be formed by nitriding the surface of the silicide film.
公开/授权文献
- US6084817A Semiconductor memory with transfer buffer structure 公开/授权日：2000-07-04
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