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    Multilevel interconnect structure
    4.
    发明授权
    Multilevel interconnect structure 失效
    多层互连结构

    公开(公告)号：US5627345A

    公开(公告)日：1997-05-06

    申请号：US198788

    申请日：1994-02-18

    申请人： Hiroshi Yamamoto ,  Tomohiro Ohta ,  Nobuyuki Takeyasu

    发明人： Hiroshi Yamamoto ,  Tomohiro Ohta ,  Nobuyuki Takeyasu

    IPC分类号： H01L23/522 ,  H01L23/532 ,  H05K1/09 ,  H05K1/14

    CPC分类号： H01L21/76852 ,  H01L21/76885 ,  H01L23/5226 ,  H01L23/53223 ,  H01L2924/0002 ,  Y10T29/49126 ,  Y10T29/49165

    摘要： A multilevel interconnect structure for use in a semiconductor device includes a lower metal wiring having an aluminum or aluminum alloy film and a high melting point metal or high melting point metal alloy film. An interlayer insulating film is deposited on the lower metal wiring and a via hole is formed in the interlayer insulating film. A plug made of aluminum or aluminum alloy is formed in the via hole. An upper metal wiring has an aluminum or aluminum alloy film and a high melting point metal or high melting point metal alloy film. The plug directly contacts the aluminum or aluminum alloy film of at least one of the lower and upper metal wirings to decrease the via resistance without reducing the electromigration reliability.

    摘要翻译： 用于半导体器件的多层互连结构包括具有铝或铝合金膜和高熔点金属或高熔点金属合金膜的下金属布线。 层间绝缘膜沉积在下金属布线上，并且在层间绝缘膜中形成通孔。 在通孔中形成由铝或铝合金制成的塞子。 上金属布线具有铝或铝合金膜和高熔点金属或高熔点金属合金膜。 插头直接接触下部和上部金属布线中的至少一个的铝或铝合金膜以降低通孔电阻而不降低电迁移可靠性。

    Method of manufacturing semiconductor device and an apparatus for manufacturing the same
    6.
    发明授权
    Method of manufacturing semiconductor device and an apparatus for manufacturing the same 失效
    半导体装置的制造方法及其制造装置

    公开(公告)号：US6001736A

    公开(公告)日：1999-12-14

    申请号：US610341

    申请日：1996-03-04

    申请人： Eiichi Kondo ,  Nobuyuki Takeyasu ,  Tomohiro Ohta ,  Yumiko Kawano ,  Takeshi Kaizuka ,  Shinpei Jinnouchi

    发明人： Eiichi Kondo ,  Nobuyuki Takeyasu ,  Tomohiro Ohta ,  Yumiko Kawano ,  Takeshi Kaizuka ,  Shinpei Jinnouchi

    IPC分类号： H01L21/306 ,  H01L21/768 ,  H01L21/441

    CPC分类号： H01L21/02068 ,  H01L21/76843 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76877

    摘要： An insulating layer is provided on a semiconductor substrate, a contact hole is formed in the insulating layer, and an underlying metal film is provided on a whole surface of the substrate including inner walls of the contact hole. A surface condition of the underlying metal film is adjusted by a hydrogen plasma treatment. By the hydrogen plasma treatment, a surface of the underlying metal film is hydrogenated and is sputter-etched, so that a disordered film and contaminants adsorbed on the surface of the underlying metal film are removed. Next, aluminum is deposited on the underlying metal film by a chemical vapor deposition process using an organic aluminum compound such as DMAH. The contact hole can be effectively filled with aluminum.

    摘要翻译： 绝缘层设置在半导体衬底上，在绝缘层中形成接触孔，并且在包括接触孔的内壁的衬底的整个表面上设置下面的金属膜。 通过氢等离子体处理来调整底层金属膜的表面状态。 通过氢等离子体处理，下面的金属膜的表面被氢化并进行溅射蚀刻，从而去除吸附在下面的金属膜的表面上的无序的膜和污染物。 接下来，通过使用有机铝化合物如DMAH的化学气相沉积工艺将铝沉积在下面的金属膜上。 接触孔可以有效地填充铝。

    Method of manufacturing semiconductor device with contact structure
    7.
    发明授权
    Method of manufacturing semiconductor device with contact structure 失效
    具有接触结构的半导体器件的制造方法

    公开(公告)号：US5652180A

    公开(公告)日：1997-07-29

    申请号：US264928

    申请日：1994-06-24

    申请人： Hiroshi Shinriki ,  Hiroshi Yamamoto ,  Nobuyuki Takeyasu ,  Takayuki Komiya ,  Tomohiro Ohta

    发明人： Hiroshi Shinriki ,  Hiroshi Yamamoto ,  Nobuyuki Takeyasu ,  Takayuki Komiya ,  Tomohiro Ohta

    IPC分类号： H01L21/768 ,  H01L21/285

    CPC分类号： H01L21/76879 ,  H01L2924/0002

    摘要： A semiconductor device with a contact structure includes a silicon substrate, a diffusion region formed in a surface of the silicon substrate, a silicide film of high melting point metal deposited on the diffusion region, an insulating film formed on the silicon substrate, a contact hole formed in the insulating film such that the silicide film is exposed at a bottom of the contact hole, an anti-diffusion film formed on the exposed surface of the silicide film at the bottom of the contact film, a plug formed in the contact hole by a selective Al CVD, and a metal wiring formed on the insulating film such that the metal wiring is electrically connected to the diffusion region by means of the plug, anti-diffusion film and silicide film. The anti-diffusion film may be formed by nitriding the surface of the silicide film.

    摘要翻译： 具有接触结构的半导体器件包括硅衬底，形成在硅衬底的表面中的扩散区，沉积在扩散区上的高熔点金属的硅化物膜，形成在硅衬底上的绝缘膜，接触孔 形成在绝缘膜上，使得硅化物膜暴露在接触孔的底部，形成在接触膜底部的硅化物膜的暴露表面上的防扩散膜，通过接触孔形成的插塞 选择性Al CVD，以及形成在绝缘膜上的金属布线，使得金属布线通过插塞，防扩散膜和硅化物膜电连接到扩散区。 抗扩散膜可以通过氮化硅化物膜的表面而形成。

    Method for making metal interconnection with chlorine plasma etch
    8.
    发明授权
    Method for making metal interconnection with chlorine plasma etch 失效
    用氯等离子体蚀刻制造金属互连的方法

    公开(公告)号：US5627102A

    公开(公告)日：1997-05-06

    申请号：US569319

    申请日：1995-12-08

    申请人： Hiroshi Shinriki ,  Takeshi Kaizuka ,  Nobuyuki Takeyasu ,  Tomohiro Ohta ,  Eiichi Kondoh ,  Hiroshi Yamamoto ,  Tomoharu Katagiri ,  Tadashi Nakano ,  Yumiko Kawano

    发明人： Hiroshi Shinriki ,  Takeshi Kaizuka ,  Nobuyuki Takeyasu ,  Tomohiro Ohta ,  Eiichi Kondoh ,  Hiroshi Yamamoto ,  Tomoharu Katagiri ,  Tadashi Nakano ,  Yumiko Kawano

    IPC分类号： H01L21/285 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/28

    CPC分类号： H01L21/76838 ,  H01L21/28556 ,  H01L21/32136 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76865 ,  H01L21/76877 ,  H01L23/53223 ,  H01L2924/0002

    摘要： A metal interconnection is prepared by forming an underlying metal film of high melting point metal such as Ti and/or high melting point metal compound such as TiN layers above a semiconductor substrate, plasma etching the surface of the underlying metal film in a gas atmosphere containing chloride, and forming an interconnecting metal film such as Al, Cu, Au and Ag on the underlying metal film. Alternatively, a metal interconnection is prepared by forming an insulating film above a semiconductor substrate, forming connection holes in the insulating film, forming an underlying metal film such as TiN on the insulating film and the bottom and side wall of the connection holes by a CVD process under controlled conditions, and forming an interconnecting metal film such as Al on the underlying metal film. The TiN film has (111) preferential orientation and the aluminum film has (111) preferential orientation, smooth surface and effective coverage. The thus fabricated metal interconnection has improved reliability including electromigration immunity when used in semiconductor devices and finding advantageous use in miniaturized semiconductor devices.

    摘要翻译： 通过在半导体衬底之上形成诸如Ti和/或高熔点金属化合物如TiN层的高熔点金属的下面的金属膜，在等离子体中蚀刻下面的金属膜的表面，在含有 并在下面的金属膜上形成诸如Al，Cu，Au和Ag的互连金属膜。 或者，通过在半导体衬底上形成绝缘膜，在绝缘膜上形成连接孔，通过CVD在绝缘膜上形成TiN等下面的金属膜，形成连接孔的底壁和侧壁，形成金属互连 在控制条件下进行处理，并在底层金属膜上形成互连金属膜如Al。 TiN膜具有（111）优先取向，铝膜具有（111）优先取向，表面光滑，有效覆盖。 如此制造的金属互连具有改进的可靠性，包括当用于半导体器件中的电迁移抗扰性并且在小型化的半导体器件中发现有利的用途。