发明授权
US5654208A Method for producing a semiconductor device having a semiconductor layer
of SiC comprising a masking step
失效
用于制造具有包括掩模步骤的SiC的半导体层的半导体器件的方法
- 专利标题： Method for producing a semiconductor device having a semiconductor layer of SiC comprising a masking step
- 专利标题（中）： 用于制造具有包括掩模步骤的SiC的半导体层的半导体器件的方法
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申请号： US436487申请日： 1995-05-08
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公开(公告)号： US5654208A公开(公告)日： 1997-08-05
- 发明人: Christopher Harris , Andrei Konstantinov , Erik Janzen
- 申请人： Christopher Harris , Andrei Konstantinov , Erik Janzen
- 申请人地址： SEX Zurich
- 专利权人： ABB Research Ltd.
- 当前专利权人： ABB Research Ltd.
- 当前专利权人地址： SEX Zurich
- 优先权： SEX9501312 19950410
- 主分类号： H01L21/22
- IPC分类号： H01L21/22 ; H01L21/04 ; H01L21/265 ; H01L21/318 ; H01L29/24 ; H01L29/861
摘要：
The present invention relates to a method for producing a semiconductor device having a semiconductor layer of SiC. The method comprises the steps of a) applying a mask on at least a portion of the SiC layer to coat a first portion of the SiC layer leaving a second portion thereof uncoated, b) applying a heat treatment to the SiC layer, and c) supplying dopants to the SiC layer during the heat treatment for diffusion of the dopants into the SiC layer at the second portion thereof for doping the SiC layer. The mask is made of crystalline AIN as the only component or AIN as a major component of a crystalline alloy constituting the material.
公开/授权文献
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