发明授权
US5656514A Method for making heterojunction bipolar transistor with self-aligned
retrograde emitter profile
失效
具有自对准逆向发射极分布的异质结双极晶体管的方法
- 专利标题: Method for making heterojunction bipolar transistor with self-aligned retrograde emitter profile
- 专利标题(中): 具有自对准逆向发射极分布的异质结双极晶体管的方法
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申请号: US346209申请日: 1994-11-22
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公开(公告)号: US5656514A公开(公告)日: 1997-08-12
- 发明人: David Ahlgren , Jack Chu , Martin Revitz , Paul Ronsheim , Mary Saccamango , David Sunderland
- 申请人: David Ahlgren , Jack Chu , Martin Revitz , Paul Ronsheim , Mary Saccamango , David Sunderland
- 申请人地址: NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: NY Armonk
- 主分类号: H01L29/165
- IPC分类号: H01L29/165 ; H01L21/331 ; H01L29/73 ; H01L29/737 ; H01L21/265
摘要:
A high gain, high frequency transistor is formed having a combination of a moderately doped retrograde emitter and a collector which is formed by self-aligned implantation through an emitter opening window. This combination allows continued base width scaling and ensures high current capability yet limits the electric field at the emitter-base junction, particularly near the base contacts, in order to reduce leakage and capacitance and to enhance breakdown voltage. Cut-off frequencies on the order of 100 GHz can thus be obtained in the performance of a transistor with a 30 nm base width in a SiGe device.
公开/授权文献
- US6063529A Overlay accuracy measurement mark 公开/授权日:2000-05-16