发明授权
US5657282A Semiconductor memory device with stress circuit and method for supplying
a stress voltage thereof
失效
具有应力电路的半导体存储器件及其应力电压的提供方法
- 专利标题: Semiconductor memory device with stress circuit and method for supplying a stress voltage thereof
- 专利标题(中): 具有应力电路的半导体存储器件及其应力电压的提供方法
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申请号: US400995申请日: 1995-03-09
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公开(公告)号: US5657282A公开(公告)日: 1997-08-12
- 发明人: Kyu-Chan Lee
- 申请人: Kyu-Chan Lee
- 申请人地址: KRX Suwon
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KRX Suwon
- 优先权: KRX4690-1994 19940310
- 主分类号: G11C11/413
- IPC分类号: G11C11/413 ; G11C11/401 ; G11C11/407 ; G11C29/00 ; G11C29/02 ; G11C29/06 ; G11C29/50 ; G11C29/56
摘要:
A semiconductor integrated circuit with a stress circuit and a stress voltage supplying method thereof ensures the reliability of the device. The semiconductor integrated circuit has a stress enable circuit for generating an enable signal during a test operation of the chip and for enabling the test operation, a stress voltage supplying circuit for supplying a first stress voltage and a second stress voltage in response to an output signal of the stress enable circuit during the test operation, and a sensing delay control circuit for receiving the first and second stress voltages and for delaying an operation of the sense amp control circuit during the test operation. During the test operation, the first and second stress voltages are supplied to word lines adjacent to each other in response to the output signal of the stress enable circuit, and a state of a selected memory cell by the word line is sensed in response to an output signal of the sensing delay control circuit.
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