发明授权
US5662743A Method of cleaning silicon wafers in cleaning baths with controlled
vertical surface oscillations and controlled in/out speeds
失效
在具有受控垂直表面振荡和受控进/出速度的清洗浴中清洁硅晶片的方法
- 专利标题: Method of cleaning silicon wafers in cleaning baths with controlled vertical surface oscillations and controlled in/out speeds
- 专利标题(中): 在具有受控垂直表面振荡和受控进/出速度的清洗浴中清洁硅晶片的方法
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申请号: US439560申请日: 1995-05-11
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公开(公告)号: US5662743A公开(公告)日: 1997-09-02
- 发明人: Masami Nakano , Isao Uchiyama , Hiroyuki Takamatsu , Morie Suzuki
- 申请人: Masami Nakano , Isao Uchiyama , Hiroyuki Takamatsu , Morie Suzuki
- 申请人地址: JPX Tokyo
- 专利权人: Shin-Etsu Handotai Co., Ltd.
- 当前专利权人: Shin-Etsu Handotai Co., Ltd.
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX6-105116 19940519
- 主分类号: C11D7/08
- IPC分类号: C11D7/08 ; H01L21/304 ; H01L21/306 ; B08B3/04 ; C23G1/02
摘要:
A novel HF cleaning method of silicon wafers is provided whereby the wafers are cleaned with a lowered level of particle contamination on the surface thereof. In the method silicon wafers are immersed in a HF bath, followed by immersion in a deionized water bath. The silicon wafers are lowered into and lifted out of each bath along a direction which is substantially vertical with respect to a surface of each bath at a rate of from 1 mm/sec to 50 mm/sec. During immersion, a vertical oscillation of the surface of each bath is maintained in the range of less than 4 mm.
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