发明授权
- 专利标题: Plasma processing method with controlled ion/radical ratio
- 专利标题(中): 具有受控离子/自由基比的等离子体处理方法
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申请号: US383227申请日: 1995-02-03
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公开(公告)号: US5662819A公开(公告)日: 1997-09-02
- 发明人: Shingo Kadomura
- 申请人: Shingo Kadomura
- 申请人地址: JPX Tokyo
- 专利权人: Sony Corporation
- 当前专利权人: Sony Corporation
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX6-016563 19940210; JPX6-022478 19940221; JPX6-205282 19940830
- 主分类号: C23F4/00
- IPC分类号: C23F4/00 ; H01J37/32 ; H01L21/302 ; H01L21/3065 ; H01L21/3213 ; B44C1/22 ; C03C15/00 ; C03C25/06 ; C23F1/00
摘要:
Controlling ion/radical ratio and monoatomic/polyatomic radical ratio in a process plasma provides improved processing performance during inductively-coupled plasma and/or helicon wave plasma processing of substrate materials. In a plasma processing method employing inductively coupled plasma, high frequency current to a high frequency antenna is intermittently supplied in a controlled manner to control the state of gas dissociation to promote formation of polyatomic radicals. In a plasma processing method employing helicon wave plasma, current supplied to a magnetic field generator is intermittently supplied in a controlled manner to promote formation of ions. In a preferred method both the high frequency current and magnetic field generating current are varied in a controlled manner to provide a variable plasma composition, i.e., radical rich plasma or ion-rich plasma, as desired, for improved plasma processing especially improved selective anisotropic dry etching at high etch rate.