发明授权
US5665202A Multi-step planarization process using polishing at two different pad
pressures
失效
使用两种不同压力下的抛光进行多步平面化处理
- 专利标题: Multi-step planarization process using polishing at two different pad pressures
- 专利标题(中): 使用两种不同压力下的抛光进行多步平面化处理
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申请号: US562440申请日: 1995-11-24
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公开(公告)号: US5665202A公开(公告)日: 1997-09-09
- 发明人: Chitra K. Subramanian , Asanga H. Perera , James D. Hayden , Subramoney V. Iyer
- 申请人: Chitra K. Subramanian , Asanga H. Perera , James D. Hayden , Subramoney V. Iyer
- 申请人地址: IL Schaumburg
- 专利权人: Motorola, Inc.
- 当前专利权人: Motorola, Inc.
- 当前专利权人地址: IL Schaumburg
- 主分类号: H01L21/3105
- IPC分类号: H01L21/3105 ; H01L21/306
摘要:
A process for polish planarizing a fill material (40) overlying a semiconductor substrate (30) includes a multi-step polishing process. In one embodiment, a second planarization layer (42) is deposited over a fill material (40) and a portion of the fill material (40) is removed leaving a remaining portion (44). The pad pressure of a CMP apparatus (20) is adjusted such that a first pressure is generated during the polishing process. Then, the remaining portion (44) is removed, while operating the CMP apparatus (20) at a second pad pressure. The selectivity of the polishing process is maintained by reducing the pad pressure during the second polishing step. In a second embodiment, after the first polishing step is performed, the remaining portion (44) is removed by an etching process using a portion (46) of second planarization layer (42).
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