发明授权
- 专利标题: Method of manufacturing single-wafer tunneling sensor
- 专利标题(中): 单晶硅隧道传感器的制造方法
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申请号: US456211申请日: 1995-05-31
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公开(公告)号: US5665253A公开(公告)日: 1997-09-09
- 发明人: Randall L. Kubena , Gary M. Atkinson
- 申请人: Randall L. Kubena , Gary M. Atkinson
- 申请人地址: CA Los Angeles
- 专利权人: Hughes Electronics
- 当前专利权人: Hughes Electronics
- 当前专利权人地址: CA Los Angeles
- 主分类号: G01L1/18
- IPC分类号: G01L1/18 ; G01C19/56 ; G01L9/04 ; G01P15/08 ; G01P15/13 ; G01Q10/00 ; G01Q60/16 ; G01Q70/16 ; H01L29/84 ; H01L21/027 ; H01J37/244
摘要:
A tunneling tip sensor and a method of photolithographically fabricating a unitary structure sensor on a semiconductor substrate are disclosed. A cantilever electrode is formed on the substrate with one end suspended above the substrate at a distance from a tunneling electrode so that a tunneling current flows through the cantilever and tunneling electrodes in response to an applied bias voltage. The cantilever and tunneling electrodes form a circuit that produces an output signal. A force applied to the sensor urges the cantilever electrode to deflect relative to the tunneling electrode to modulate the output signal. In the preferred embodiment, the output signal is a control voltage that is applied between the cantilever electrode and a control electrode to maintain a constant tunneling current. In an alternative embodiment, a lateral control electrode is fabricated to produce a lateral motion of the cantilever electrode such that the sensor detects a rotation. In another embodiment, x, y and z-axis sensors are fabricated on a substrate to provide a planar three-axis sensor.
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