Tunneling rotation sensor
    1.
    发明授权
    Tunneling rotation sensor 失效
    隧道旋转传感器

    公开(公告)号:US5905202A

    公开(公告)日:1999-05-18

    申请号:US977702

    申请日:1997-11-25

    摘要: Various structures for cantilever beam tunneling rate gyro devices formed on a single substrate are disclosed. A cantilever electrode having a plurality of portions extending from the substrate with one end of the cantilever is suspended above the substrate at a distance from a tunneling electrode so that a tunneling current flows through the cantilever and tunneling electrode in response to an applied bias voltage. The cantilever and tunneling electrodes form a circuit that produces an output signal. A force applied to the sensor urges the cantilever electrode to deflect relative to the tunneling electrode to modulate the output signal. The output signal is a control voltage that is applied between the cantilever electrode and a control electrode to maintain a constant tunneling current. In the preferred embodiment, two cantilever portions extend from the wafer surface forming a Y-shape. In a further embodiment, a strap is fabricated on the cantilever electrode. In an alternate embodiment, a ridge emitter is formed such that it remains under the cantilever electrode during lateral motion of the cantilever. In an alternate embodiment, a cantilever having a varying width is fabricated.

    摘要翻译: 公开了在单个基板上形成的用于悬臂梁隧穿率陀螺装置的各种结构。 具有多个从悬臂的一端延伸的基板的悬臂电极在隧道电极的一定距离处悬挂在基板上方,使得隧道电流响应于所施加的偏置电压而流过悬臂和隧道电极。 悬臂和隧道电极形成产生输出信号的电路。 施加到传感器的力促使悬臂电极相对于隧道电极偏转,以调制输出信号。 输出信号是施加在悬臂电极和控制电极之间以保持恒定的隧道电流的控制电压。 在优选实施例中,两个悬臂部分从形成Y形的晶片表面延伸。 在另一个实施例中,在悬臂电极上制造带。 在替代实施例中,脊形发射器形成为使得其在悬臂的横向运动期间保持在悬臂电极下方。 在替代实施例中,制造具有变化宽度的悬臂。

    Single-wafer tunneling sensor and low-cost IC manufacturing method
    2.
    发明授权
    Single-wafer tunneling sensor and low-cost IC manufacturing method 失效
    单晶硅隧道传感器和低成本IC制造方法

    公开(公告)号:US5596194A

    公开(公告)日:1997-01-21

    申请号:US292897

    申请日:1994-08-19

    摘要: A tunneling tip sensor and method of photolithographically fabricating a unitary structure sensor on a semiconductor substrate are disclosed. A cantilever electrode is formed on the substrate with one end suspended above the substrate at a distance from a tunneling electrode so that a tunneling current flows through the cantilever and tunneling electrodes in response to an applied bias voltage. The cantilever and tunneling electrodes form a circuit that produces an output signal. A force applied to the sensor urges the cantilever electrode to deflect relative to the tunneling electrode to modulate the output signal. In the preferred embodiment, the output signal is a control voltage that is applied between the cantilever electrode and a control electrode to maintain a constant tunneling current. In an alternative embodiment, a lateral control electrode is fabricated to produce a lateral motion of the cantilever electrode such that the sensor detects a rotation. In another embodiment, x, y and z-axis sensors are fabricated on a substrate to provide a planar three-axis sensor.

    摘要翻译: 公开了一种在半导体衬底上光刻地制造单一结构传感器的隧道尖端传感器和方法。 在基板上形成悬臂电极,其一端悬挂在距离隧道电极一定距离的衬底上方,使得响应于所施加的偏置电压,隧道电流流过悬臂和隧道电极。 悬臂和隧道电极形成产生输出信号的电路。 施加到传感器的力促使悬臂电极相对于隧道电极偏转,以调制输出信号。 在优选实施例中,输出信号是施加在悬臂电极和控制电极之间以保持恒定的隧穿电流的控制电压。 在替代实施例中,制造横向控制电极以产生悬臂电极的横向运动,使得传感器检测到旋转。 在另一个实施例中,x,y和z轴传感器制造在衬底上以提供平面三轴传感器。

    Method of manufacturing single-wafer tunneling sensor
    3.
    发明授权
    Method of manufacturing single-wafer tunneling sensor 失效
    单晶硅隧道传感器的制造方法

    公开(公告)号:US5665253A

    公开(公告)日:1997-09-09

    申请号:US456211

    申请日:1995-05-31

    摘要: A tunneling tip sensor and a method of photolithographically fabricating a unitary structure sensor on a semiconductor substrate are disclosed. A cantilever electrode is formed on the substrate with one end suspended above the substrate at a distance from a tunneling electrode so that a tunneling current flows through the cantilever and tunneling electrodes in response to an applied bias voltage. The cantilever and tunneling electrodes form a circuit that produces an output signal. A force applied to the sensor urges the cantilever electrode to deflect relative to the tunneling electrode to modulate the output signal. In the preferred embodiment, the output signal is a control voltage that is applied between the cantilever electrode and a control electrode to maintain a constant tunneling current. In an alternative embodiment, a lateral control electrode is fabricated to produce a lateral motion of the cantilever electrode such that the sensor detects a rotation. In another embodiment, x, y and z-axis sensors are fabricated on a substrate to provide a planar three-axis sensor.

    摘要翻译: 公开了隧道尖端传感器和在半导体衬底上光刻地制造单一结构传感器的方法。 悬臂电极形成在衬底上,其一端悬在衬底上方距隧道电极一段距离处,使得隧道电流响应于所施加的偏置电压而流过悬臂和隧道电极。 悬臂和隧道电极形成产生输出信号的电路。 施加到传感器的力促使悬臂电极相对于隧道电极偏转,以调制输出信号。 在优选实施例中,输出信号是施加在悬臂电极和控制电极之间以保持恒定的隧穿电流的控制电压。 在替代实施例中,制造横向控制电极以产生悬臂电极的横向运动,使得传感器检测到旋转。 在另一个实施例中,x,y和z轴传感器制造在衬底上以提供平面三轴传感器。

    Tunneling-based rate gyros with simple drive and sense axis coupling
    4.
    发明授权
    Tunneling-based rate gyros with simple drive and sense axis coupling 有权
    基于隧道的速率陀螺仪,具有简单的驱动和感测轴耦合

    公开(公告)号:US6109105A

    公开(公告)日:2000-08-29

    申请号:US186174

    申请日:1998-11-04

    摘要: Various structures for cantilever beam tunneling rate gyro devices formed on a single substrate are disclosed. A cantilever electrode having a plurality of portions extending from the substrate with one end of the cantilever is suspended above the substrate at a distance from a tunneling electrode so that a tunneling current flows through the cantilever and tunneling electrode in response to an applied bias voltage. The cantilever and tunneling electrodes form a circuit that produces an output signal. A force applied to the sensor urges the cantilever electrode to deflect relative to the tunneling electrode to modulate the output signal. The output signal is a control voltage that is applied between the cantilever electrode and a control electrode to maintain a constant tunneling current. In the preferred embodiment, two cantilever portions extend from the wafer surface forming a Y-shape. In a further embodiment, a strap is fabricated on the cantilever electrode. In an alternate embodiment, a ridge emitter is formed such that it remains under the cantilever electrode during lateral motion of the cantilever. In an alternate embodiment, a cantilever having a varying width is fabricated.

    摘要翻译: 公开了在单个基板上形成的用于悬臂梁隧穿率陀螺装置的各种结构。 具有多个从悬臂的一端延伸的基板的悬臂电极在隧道电极的一定距离处悬挂在基板上方,使得隧道电流响应于所施加的偏置电压而流过悬臂和隧道电极。 悬臂和隧道电极形成产生输出信号的电路。 施加到传感器的力促使悬臂电极相对于隧道电极偏转,以调制输出信号。 输出信号是施加在悬臂电极和控制电极之间以保持恒定的隧道电流的控制电压。 在优选实施例中,两个悬臂部分从形成Y形的晶片表面延伸。 在另一个实施例中,在悬臂电极上制造带。 在替代实施例中,脊形发射器形成为使得其在悬臂的横向运动期间保持在悬臂电极下方。 在替代实施例中,制造具有变化宽度的悬臂。

    Tunneling-based rate gyros with simple drive and sense axis coupling
    5.
    发明授权
    Tunneling-based rate gyros with simple drive and sense axis coupling 失效
    基于隧道的速率陀螺仪,具有简单的驱动和感测轴耦合

    公开(公告)号:US5756895A

    公开(公告)日:1998-05-26

    申请号:US522878

    申请日:1995-09-01

    摘要: Various structures for cantilever beam tunneling rate gyro devices formed on a single substrate are disclosed. A cantilever electrode having a plurality of portions extending from the substrate with one end of the cantilever is suspended above the substrate at a distance from a tunneling electrode so that a tunneling current flows through the cantilever and tunneling electrode in response to an applied bias voltage. The cantilever and tunneling electrodes form a circuit that produces an output signal. A force applied to the sensor urges the cantilever electrode to deflect relative to the tunneling electrode to modulate the output signal. The output signal is a control voltage that is applied between the cantilever electrode and a control electrode to maintain a constant tunneling current. In the preferred embodiment, two cantilever portions extend from the wafer surface forming a Y-shape. In a further embodiment, a strap is fabricated on the cantilever electrode. In an alternate embodiment, a ridge emitter is formed such that it remains under the cantilever electrode during lateral motion of the cantilever In an alternate embodiment, a cantilever having a varying width is fabricated.

    摘要翻译: 公开了在单个基板上形成的用于悬臂梁隧穿率陀螺装置的各种结构。 具有多个从悬臂的一端延伸的基板的悬臂电极在隧道电极的一定距离处悬挂在基板上方,使得隧道电流响应于所施加的偏置电压而流过悬臂和隧道电极。 悬臂和隧道电极形成产生输出信号的电路。 施加到传感器的力促使悬臂电极相对于隧道电极偏转,以调制输出信号。 输出信号是施加在悬臂电极和控制电极之间以保持恒定的隧道电流的控制电压。 在优选实施例中,两个悬臂部分从形成Y形的晶片表面延伸。 在另一个实施例中,在悬臂电极上制造带。 在替代实施例中,脊形发射器形成为使得其在悬臂的横向运动期间保持在悬臂电极下方。在替代实施例中,制造具有变化宽度的悬臂。

    Remotely deployable vapor delivery device
    6.
    发明授权
    Remotely deployable vapor delivery device 有权
    可远程部署的蒸汽输送装置

    公开(公告)号:US09259499B2

    公开(公告)日:2016-02-16

    申请号:US13232411

    申请日:2011-09-14

    CPC分类号: A61L9/127 A01M1/2044

    摘要: A remotely deployable vapor delivery device is described that is conveniently and effectively deployed in a hard-to-reach location. The device is approximately spherical in shape, and includes an integrated reservoir containing the desired vapor producing substance, an evaporative surface and means for continuous flow of the vapor producing substance from the integrated reservoir to the evaporative surface which provides an approximately constant vapor delivery rate. The advantages of the embodiments include a device that can be conveniently tossed or rolled, is compact in size, provides a maximal amount of stored vapor producing substance, has an efficient usage rate of the stored vapor producing substance and provides a long operating lifetime. Other advantages of the embodiments described include hands-free activation, self-righting after deployment, tamper resistance, non-energized operation, a modest number of low cost parts that are readily manufactured and assembled, and easy retrieval.

    摘要翻译: 描述了可远程部署的蒸汽输送装置,其被方便且有效地部署在难以到达的位置。 该装置的形状近似为球形,并且包括含有所需的蒸汽产生物质的蒸发表面和蒸气产生物质从蒸发表面连续流动到蒸发表面的集成储存器,其提供大致恒定的蒸气输送速率。 实施方案的优点包括可以方便地扔或滚动的装置,尺寸紧凑,提供最大量的储存蒸气产生物质,具有储存的蒸气产生物质的有效使用率并提供长的使用寿命。 所描述的实施例的其他优点包括免提启动,部署后的自我纠正,防篡改,无电力操作,易于制造和组装的适度数量的低成本部件以及容易的检索。

    REMOTELY DEPLOYABLE VAPOR DELIVERY DEVICE
    7.
    发明申请
    REMOTELY DEPLOYABLE VAPOR DELIVERY DEVICE 有权
    远程可配置的蒸汽交付设备

    公开(公告)号:US20120061486A1

    公开(公告)日:2012-03-15

    申请号:US13232411

    申请日:2011-09-14

    IPC分类号: A61L9/04

    CPC分类号: A61L9/127 A01M1/2044

    摘要: A remotely deployable vapor delivery device is described that is conveniently and effectively deployed in a hard-to-reach location. The device is approximately spherical in shape, and includes an integrated reservoir containing the desired vapor producing substance, an evaporative surface and means for continuous flow of the vapor producing substance from the integrated reservoir to the evaporative surface which provides an approximately constant vapor delivery rate. The advantages of the embodiments include a device that can be conveniently tossed or rolled, is compact in size, provides a maximal amount of stored vapor producing substance, has an efficient usage rate of the stored vapor producing substance and provides a long operating lifetime. Other advantages of the embodiments described include hands-free activation, self-righting after deployment, tamper resistance, non-energized operation, a modest number of low cost parts that are readily manufactured and assembled, and easy retrieval.

    摘要翻译: 描述了可远程部署的蒸汽输送装置,其被方便且有效地部署在难以到达的位置。 该装置的形状近似为球形,并且包括含有所需的蒸汽产生物质的蒸发表面和蒸气产生物质从蒸发表面连续流动到蒸发表面的集成储存器,其提供大致恒定的蒸气输送速率。 实施方案的优点包括可以方便地扔或滚动的装置,尺寸紧凑,提供最大量的储存蒸气产生物质,具有储存的蒸气产生物质的有效使用率并提供长的使用寿命。 所描述的实施例的其他优点包括免提启动,部署后的自我纠正,防篡改,无电力操作,易于制造和组装的适度数量的低成本部件以及容易的检索。

    Integrated circuit resistor fabrication using focused ion beam
    8.
    发明授权
    Integrated circuit resistor fabrication using focused ion beam 失效
    使用聚焦离子束的集成电路电阻制造

    公开(公告)号:US5047827A

    公开(公告)日:1991-09-10

    申请号:US569690

    申请日:1990-08-20

    CPC分类号: H01L27/0802

    摘要: A high value, precision resistor (10) includes a doped region (18) having a boustrophedonic (folded or meandering) shape formed in a substrate (12). At least one section of the doped region (18) is formed by implantation using a focused ion beam. Where the entire doped region (18) is formed by the focused ion beam, the length thereof is selected to be large (10 to 100 times the width of the boustrophedonic shape) to maximize the accuracy of the resistor (10) by averaging over variations in grain size and implant dose. Alternatively, a probe resistor (32) and a plurality of similar unconnected doped sections (28) may be formed by means such as photolithography and flood ion implantation. The probe resistor (32) is measured at the desired operating temperature to determine the ratio of the measured resistance to the desired design resistance value. The unconnected doped sections (28) are then interconnected by plugs (40, 42, 44, 46), formed with a focussed ion beam, to program the fabricated resistor to exactly the designed resistance value at the desired operating temperature.

    摘要翻译: 高价值的精密电阻器(10)包括在衬底(12)中形成的具有麻醉(折叠或曲折)形状的掺杂区域(18)。 通过使用聚焦离子束的注入形成掺杂区域(18)的至少一个部分。 在整个掺杂区域(18)由聚焦离子束形成的情况下,其长度被选择为较大的(10至100倍的波形形状的宽度),以使电阻器(10)的精度通过对变化的平均值来最大化 粒度和植入剂量。 或者,探针电阻器(32)和多个类似的未连接的掺杂部分(28)可以通过诸如光刻和泛洪离子注入的方式形成。 在期望的工作温度下测量探针电阻(32),以确定所测量的电阻与期望的设计电阻值之比。 然后,通过形成有聚焦离子束的插头(40,42,44,46)将未连接的掺杂部分(28)互连,以将所制造的电阻器精确地编程在所需工作温度下的设计电阻值。

    Fabrication method for a 3-d opto-electronic system with laser
inter-substrate communication
    9.
    发明授权
    Fabrication method for a 3-d opto-electronic system with laser inter-substrate communication 失效
    具有激光衬底间通信的3-D光电系统的制造方法

    公开(公告)号:US5501822A

    公开(公告)日:1996-03-26

    申请号:US238131

    申请日:1994-05-05

    摘要: A 3-dimensional opto-electronic system employs an optical communications channel between spaced circuit substrates. The beam from an in-line laser on one substrate is deflected by a turning mirror that is monolithically integrated on the substrate along with the laser and its associated electronic circuitry, and directed to an optical detector on another substrate. The deflection is accomplished with a turning mirror that is specially fabricated with a focused ion beam (FIB) so that it focuses or collimates as well as deflects the laser beam onto the photodetector. The mirror is initially formed with a flat surface, and is thereafter processed with the FIB to produce focusing curvatures in both x and y directions. The mirror is preferably spaced away from the laser, and is illuminated over substantially the full laser height to maximize its focal length for a given reflected spot size. For a rectangular laser beam, the mirror curvature can be different along the mirror width than along its height to produce a smaller, more rounded spot. The mirror curvature is preferably established by raster scanning the mirror area in multiple series of FIB scans, with each series encompassing a different proportion of the mirror surface, and repeating each series a number of times that generally increases with its area. The area-dependent repetition pattern is preferably followed for two sets of scans, one with the scanning area's x dimension progressively reduced and the other with its y dimension progressively reduced.

    摘要翻译: 三维光电系统在间隔的电路基板之间采用光通信通道。 在一个衬底上的来自在线激光器的光束通过与激光器及其相关联的电子电路一体地集成在衬底上的转向镜偏转,并被引导到另一个衬底上的光学检测器。 偏转通过专门用聚焦离子束(FIB)制造的转向镜完成,使得其聚焦或准直以及将激光束偏转到光电检测器上。 镜子最初形成有平坦表面,然后用FIB处理以在x和y方向上产生聚焦曲率。 反射镜优选地与激光器间隔开,并且在基本上全激光高度上照射,以使给定反射光斑尺寸的焦距最大化。 对于矩形激光束,反射镜的曲率可以沿着反射镜的宽度而不同于其高度,以产生更小,更圆的光斑。 反射镜曲率优选通过在多个FIB扫描系列中对镜面区域进行光栅扫描来建立,其中每个系列包含镜面的不同比例,并且重复每个系列通常随其面积而增加的次数。 对于两组扫描,优选地遵循面积依赖的重复图案,一组扫描区域的x维度逐渐减小,另一个扫描区域的y维度逐渐减小。

    Split collector vacuum field effect transistor
    10.
    发明授权
    Split collector vacuum field effect transistor 失效
    分体式集电极真空场效应晶体管

    公开(公告)号:US5012153A

    公开(公告)日:1991-04-30

    申请号:US455217

    申请日:1989-12-22

    IPC分类号: H01J3/02 H01J21/10 H03K17/54

    摘要: A vacuum FET is designed to perform higher level functions such as logic AND, EXCLUSIVE OR (NOR), demultiplexing, or frequency multiplication with a single device. These higher level functions are accomplished by dividing the collector of the vacuum FET into multiple segments and by providing steering electrodes just above the emitter to deflect the field emission current to the various collector segments. The collector pattern, together with the configuration of the applied signals to the device, determines the higher order function performed.

    摘要翻译: 设计真空FET以执行较高级别的功能,例如逻辑与,独占(或),解复用或单个器件的倍频。 这些较高级别的功能是通过将真空FET的集电极分成多个部分并且通过在发射极之上提供转向电极来将场致发射电流偏转到各种收集器段来实现的。 收集器图案以及所施加的信号到器件的配置,确定执行的高阶函数。