发明授权
- 专利标题: Positive photoresist composition
- 专利标题(中): 正光致抗蚀剂组合物
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申请号: US651849申请日: 1996-05-21
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公开(公告)号: US5667932A公开(公告)日: 1997-09-16
- 发明人: Kenichiro Sato , Kunihiko Kodama , Makoto Momota
- 申请人: Kenichiro Sato , Kunihiko Kodama , Makoto Momota
- 申请人地址: JPX Kanagawa
- 专利权人: Fuji Photo Film Co., Ltd.
- 当前专利权人: Fuji Photo Film Co., Ltd.
- 当前专利权人地址: JPX Kanagawa
- 优先权: JPX7-125194 19950524
- 主分类号: G03F7/023
- IPC分类号: G03F7/023 ; G03F7/022 ; H01L21/027
摘要:
Disclosed is a positive photoresist composition comprising an alkali-soluble resin and 1,2-naphthoquinonediazide-5-(and/or -4-)sulfonic esters of a polyhydroxy compound having a particular structure consisting of 5 aromatic rings linked linearly, in which each of the aromatic rings contains a hydroxyl group and the respective aromatic rings next to both the terminal rings contains a substituent group at the 5-position to the hydroxyl group thereof. The positive photoresist composition which has high resolution, low dependence of the resolution on film thickness, and broad latitude of development, leaves little development residue, and has very excellent storage stability without separation of photosensitive materials and generation of microgel (no increase in particle) with a lapse of time.
公开/授权文献
- US4576637A Process for preparing silicon-base complex ferrous alloys 公开/授权日:1986-03-18
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