摘要:
Disclosed is a positive photoresist composition comprising an alkali-soluble resin and 1,2-naphthoquinonediazide-5-(and/or -4-)sulfonic esters of a polyhydroxy compound having a particular structure consisting of 5 aromatic rings linked linearly, in which each of the aromatic rings contains a hydroxyl group and the respective aromatic rings next to both the terminal rings contains a substituent group at the 5-position to the hydroxyl group thereof. The positive photoresist composition which has high resolution, low dependence of the resolution on film thickness, and broad latitude of development, leaves little development residue, and has very excellent storage stability without separation of photosensitive materials and generation of microgel (no increase in particle) with a lapse of time.
摘要:
Provided are a method of synthesizing a highly pure polyphenol compound, which comprises (i) introducing at least one --CHRNR'R" group onto aromatic ring(s) of a phenol compound having from one to ten aromatic ring(s), wherein R represents a hydrogen atom, an alkyl group which may contain a hetero atom, a cycloalkyl group which may contain a hetero atom, an aralkyl group which may contain a hetero atom, or an aryl group, and R' and R", which may be the same or different, each represents an alkyl group which may contain a hetero atom, a cycloalkyl group which may contain a hetero atom, an aralkyl group which may contain a hetero atom, or an aryl group, and R' and R" may combine with each other to form a ring, (ii) converting the --CHRNR'R" group into a --CHRA group via one to three steps, wherein A represents a hydroxyl group, an alkoxy group, an acyloxy group, a halogen atom, a quaternary ammonium salt or a sulfonyloxy group, and (iii) condensing the thus converted phenol compound and a phenol compound, and a positive working photoresist composition using the polyphenol compound obtained by the aforementioned method.
摘要:
The present invention provides a high sensitivity chemically amplified positive-working resist composition which eliminates edge roughness on pattern and provides an excellent resist pattern profile. A novel positive-working resist composition is provided comprising (A) a resin containing an alkali-soluble group protected by at least one of moieties containing alicyclic hydrocarbon represented by general formulae (pI) to (pVI) and having a monomer component content of 5% or less of the total pattern area as determined by gel permeation chromatography (GPC), which increases in its solution velocity with respect to an alkaline developer by the action of an acid and (B) a compound which is capable of generating an acid by irradiation with an active ray or radiation.
摘要:
A positive photoresist composition comprising a photo-acid gererator and a specific resin. The resin contains repeating units each having a group represented by formula (I): —SO2—O—R wherein R represents an optionally substituted alkyl, cycloalkyl, or alkenyl group and comes to have an increased rate of dissolution in an alkaline developing solution by the action of an acid, or contains alkali-soluble groups protected by partial structures containing an alicyclic hydrocarbon and represented by at least one of formulae (pI) to (pVI) defined in the specification and which decomposes by the action of an acid to have enhanced solubility in an alkali. The latter is used in combination with a compound which decomposes by the action of an acid to generate a sulfonic acid.
摘要:
A positive photosensitive composition comprising (A) a compound which generates an acid upon irradiation with an actinic ray or radiation, and (B-1) a resin having a group which is decomposed by the action of an acid to increase solubility in an alkaline developing solution and containing at least one structure represented by formulae (I), (II) and (III) as described in the specification or (B-2) a resin having at least one monovalent polyalicyclic group represented by formula (Ib) as described in the specification and a group which is decomposed by the action of an acid to increase solubility in an alkaline developing solution. The positive photosensitive composition containing the resin according to the present invention has high transmittance to far ultraviolet light particularly having a wavelength of 220 nm or less and exhibits good dry etching resistance. Further, the positive photosensitive composition exhibits high sensitivity, good resolution and good pattern profile when far ultraviolet light having a wavelength of 250 nm or less, particularly 220 nm or less (especially an ArF excimer laser beam) is employed as an exposure light source, and thus it can be effectively employed for the formation of fine pattern necessary for the production of semiconductor elements.
摘要:
A positive photosensitive composition comprising:a compound represented by formula (I) or (I') and a compound represented by formula (II) as compounds which generate a sulfonic acid upon irradiation with actinic rays or radiation: ##STR1## The substituents in these formulae are as defined in the specification. The positive photosensitive composition has high sensitivity and high resolving power, undergoes neither a decrease in resist pattern line width nor the formation of a T-top resist pattern surface with the lapse of time from exposure to heat treatment, and exhibits less profile deterioration such as residual standing wave and collapse.
摘要:
A positive resist composition comprising: (A) a resin having alicyclic hydrocarbon groups in side chains, containing specified two types of repeating units, which increases the solubility in an alkali developing solution by the action of an acid; and (B) a particular sulfonium compound having a specified structure and capable of generating an acid upon irradiation with an actinic ray or radiation.
摘要:
The present invention provides a high sensitivity chemically amplified positive-working resist composition which eliminates edge roughness on pattern and provides an excellent resist pattern profile. A novel positive-working resist composition is provided comprising (A) a resin containing an alkali-soluble group protected by at least one of moieties containing alicyclic hydrocarbon represented by general formulae (pI) to (pVI) and having a monomer component content of 5% or less of the total pattern area as determined by gel permeation chromatography (GPC), which increases in its solution velocity with respect to an alkaline developer by the action of an acid and (B) a compound which is capable of generating an acid by irradiation with an active ray or radiation.
摘要:
A positive resist composition includes: (A) a resin capable of increasing a solubility thereof in an alkali developer by an action of an acid; (B) a compound capable of generating a sulfonic acid represented by the following formula (I) upon irradiation with one of an actinic ray and a radiation; and (C1) at least one of an amine compound having at least an aliphatic hydroxyl group in a molecule and an amine compound having at least an ether bond in a molecule: A1A2-SO3H)n (I) wherein A1 represents an n-valent linking group, A2 represents a single bond or a divalent aliphatic group, and A2's each may be the same or different, provided that at least one group represented by A1 or A2 contains a fluorine atom, and n represents an integer of from 2 to 4.
摘要翻译:正型抗蚀剂组合物包括:(A)能够通过酸的作用增加其在碱性显影剂中的溶解度的树脂; (B)在用光化学射线和辐射之一照射时能够产生由下式(I)表示的磺酸的化合物; 和(C1)分子中至少具有脂肪族羟基的胺化合物和分子中具有至少一个醚键的胺化合物中的至少一种:&lt;线内配方说明=“在线式” end =“lead”?> A 1 SUB> A 2 sub> 3 h> (I)<?in-line-formula description =“In-line Formulas”end =“tail”?>其中A 1代表n价连接基团,A < SUB 2表示单键或二价脂族基团,并且A 2各自可以相同或不同,条件是至少一个由A 1表示的基团 SUB>或A 2 SUB>含有氟原子,n表示2〜4的整数。
摘要:
A positive photosensitive composition suitable for resist pattern formation under exposure to far ultraviolet light of wavelengths of 250 nm or shorter, particularly 220 nm or shorther, comprising: (A) a resin comprising constitutional repeating units wherein particular ring structures are present and having groups capable of decomposing under the action of an acid to cause an increase of the solubility in an alkali developer, (B) a photo-acid generator capable of generating an acid upon irradiation with actinic rays or radiation, and (C) a fluorine-containing surfactant, a silicon-containing surfactant or a mixture thereof.