发明授权
US5674321A Method and apparatus for producing plasma uniformity in a magnetic
field-enhanced plasma reactor
失效
用于在磁场增强等离子体反应器中产生等离子体均匀性的方法和装置
- 专利标题： Method and apparatus for producing plasma uniformity in a magnetic field-enhanced plasma reactor
- 专利标题（中）： 用于在磁场增强等离子体反应器中产生等离子体均匀性的方法和装置
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申请号： US431178申请日： 1995-04-28
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公开(公告)号： US5674321A公开(公告)日： 1997-10-07
- 发明人: Bryan Pu , Hongching Shan
- 申请人： Bryan Pu , Hongching Shan
- 申请人地址： CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： CA Santa Clara
- 主分类号： H01J37/32
- IPC分类号： H01J37/32 ; H01L21/302 ; H01L21/3065 ; H05H1/46 ; C23C16/00
摘要：
A magnetic field enhanced plasma etch reactor system for generating a radially-directed magnetic field within a reaction chamber. The reactor system comprises a reaction chamber for containing a plasma and a plurality of electromagnetic coils disposed about a reaction region within the reaction chamber. When each coil is driven with a current of similar magnitude, the electromagnetic coils produce a radially-directed magnetic field within the reaction chamber. The radially-directed magnetic field uniformly distributes the plasma throughout a bulk plasma region. Consequently, a substrate that is etched by such a uniform plasma has an improved uniformity in the etch pattern on the substrate.
公开/授权文献
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